AOTF7N60FD

AOTF7N60FD
600V, 7A N-Channel MOSFET with Fast Recovery Diode
General Description
Product Summary
The AOTF7N60FD has been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications. By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability this
part can be adopted quickly into new and existing offline
power supply designs.
VDS
ID (at VGS=10V)
[email protected]
7A
RDS(ON) (at VGS=10V)
< 1.45Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOTF7N60FDL
Top View
TO-220F
D
G
AOTF7N60FD
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
AOTF7N60FD
600
Units
V
±30
V
7*
4.7*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
3.5
A
Repetitive avalanche energy C
EAR
184
mJ
368
5
39
mJ
V/ns
W
0.3
-55 to 150
W/ oC
°C
300
°C
AOTF7N60FD
65
3.25
Units
°C/W
°C/W
Single pulsed avalanche energy G
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
PD
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.2.0 July 2013
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24
Page 1 of 6
AOTF7N60FD
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=10mA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
ID=10mA, VGS=0V, TJ=150°C
700
V
ID=10mA, VGS=0V
0.68
V/ oC
VDS=600V, VGS=0V
10
VDS=480V, TJ=125°C
100
±100
2.5
3.3
4.2
nΑ
V
1.45
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3.5A
1.2
gFS
Forward Transconductance
VDS=40V, ID=3.5A
7
VSD
Diode Forward Voltage
IS=7A,VGS=0V
IS
ISM
S
1.6
V
Maximum Body-Diode Continuous Current
7
A
Maximum Body-Diode Pulsed Current
24
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
µA
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
1.03
600
826
995
pF
60
86
115
pF
4.5
7.9
11.5
pF
2
4
6
Ω
20
25
nC
15
VGS=10V, VDS=480V, ID=7A
3.6
nC
Gate Drain Charge
7.7
nC
tD(on)
Turn-On DelayTime
24
ns
tr
Turn-On Rise Time
55
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=7A,dI/dt=100A/µs,VDS=100V
76
130
Qrr
Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V
0.3
0.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=300V, ID=7A,
RG=25Ω
56
ns
42
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.5A,
=2.3A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0 July 2013
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Page 2 of 6
AOTF7N60FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
100
-55°C
VDS=40V
10V
10
6.5V
9
ID(A)
ID (A)
12
6V
6
125°C
1
5.5V
25°C
3
VGS=5V
0
0.1
0
5
10
15
20
25
30
2
4
3
2.5
2.5
RDS(ON) (Ω)
Normalized On-Resistance
3.0
2.0
VGS=10V
1.5
1.0
0.5
2
3
6
9
12
8
10
VGS=10V
ID=3.5A
1.5
1
0.5
0
-100
0.0
0
6
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
15
ID (A)
Figure 3: On-Resistance vs. Drain Current
and Gate Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1E+02
1E+00
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
125°C
1E-01
25°C
1E-02
1E-03
0.9
1E-04
0.8
-100
1E-05
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev.2.0 July 2013
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0.0
0.4
0.8
1.2
1.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOTF7N60FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=480V
ID=7A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
Crss
10
3
1
0
0
8
16
24
32
0.1
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
10µs
100µs
1ms
1
10ms
DC
0.1s
0.1
1s
8
Current rating ID(A)
RDS(ON)
limited
10
ID (Amps)
1
TJ(Max)=150°C
TC=25°C
6
4
2
0
0.01
1
10
100
1000
0
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOTF7N60FD (Note F)
25
50
75
100
125
150
TCASE (oC)
Figure 10: Current De-rating (Note B)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF7N60FD (Note F)
Rev.2.0 July 2013
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Page 4 of 6
AOTF7N60FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
VDS=100V
IF=7A
dI/dt=100A/µs
10
AOTF7N60FD
IF (A)
5
0
-5
-10
AOTF7N60
-15
-20
-800
-600
-400
-200
0
200
400
600
800
1000
1200
Trr (nS)
Figure 12: Diode Recovery Characteristics
Rev.2.0 July 2013
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Page 5 of 6
AOTF7N60FD
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.2.0 July 2013
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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