AO4425 38V P-Channel MOSFET General Description Product Summary The AO4425 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. VDS (V) = -38V ID = -14A (VGS = -20V) RDS(ON) < 10mΩ (VGS = -20V) RDS(ON) < 11mΩ (VGS = -10V) ESD Rating: 4000V HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current A TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C ±25 V ID -11 IDM -50 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 2 TJ, TSTG t ≤ 10s Steady-State Steady-State A 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -14 Pulsed Drain Current B A Maximum -38 RθJA RθJL Typ 26 50 14 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4425 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -38 -100 TJ=55°C -500 ±1 µA ±10 µA VDS=VGS ID=-250µA -2 On state drain current VGS=-10V, VDS=-5V -50 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current VGS=-20V, ID=-14A Reverse Transfer Capacitance Gate resistance Qgs Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr -3.5 10 13.5 VGS=-10V, ID=-14A 8.8 11 VDS=-5V, ID=-14A 43 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, ID=-14A VGS=-10V, VDS=-20V, RL=1.35Ω, RGEN=3Ω IF=-14A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-14A, dI/dt=100A/µs V A 7.7 SWITCHING PARAMETERS Total Gate Charge Qg Qgd -2.5 11 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA VDS=0V, VGS=±25V Gate Threshold Voltage Crss Units VDS=0V, VGS=±20V VGS(th) Output Capacitance Max V VDS=-30V, VGS=0V ID(ON) Coss Typ 0.71 mΩ mΩ S 1 V 4.2 A 3800 pF 560 pF 350 pF 7.5 Ω 63 nC 14.1 nC 16.1 nC 12.4 ns 9.2 ns 97.5 ns 45.5 ns 35 ns nC 33 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. -15 B: Repetitive rating, pulse width limited by junction temperature. -12.8 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev 3 : Nov. 2010 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 20 25 20 -4.5V -ID(A) -ID (A) VDS=-5V -20V -10V -5V 25 -4V 15 15 125°C -3.5V 10 25°C 10 5 5 VGS=-3V 0 0 1 2 3 4 0 5 2 2.5 -VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 10 Normalized On-Resistance 1.6 VGS=-10V 9 RDS(ON) (mΩ ) 3 8 VGS=-20V 7 VGS=-10V ID = -14A 1.4 VGS=-20V ID = -14A 1.2 1 0.8 6 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 1.0E+01 20 -12.8 ID=-14A 1.0E+00 125°C -IS (A) RDS(ON) (mΩ ) 1.0E-01 15 125°C 10 1.0E-02 1.0E-03 1.0E-04 25°C 25°C 1.0E-05 1.0E-06 5 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=-15V ID=-14A Ciss 4000 Capacitance (pF) -VGS (Volts) 8 6 4 3000 2000 2 1000 0 0 Coss Crss 0 10 20 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 70 0 20 30 -VDS (Volts) Figure 8: Capacitance Characteristics 40 40 10µs RDS(ON) limited 10 TJ(Max)=150°C TA=25°C 100µs 30 1ms Power (W) -ID (Amps) 10.0 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C 10 10s DC 0.1 0.1 20 1 10 100 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) -15 10 Zθ JA Normalized Transient Thermal Resistance 0.01 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W -12.8 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 T 0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd.com