AON6946 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS Q1 30V Q2 30V ID (at VGS=10V) 16A 18A RDS(ON) (at VGS=10V) <11.6mΩ <7.8mΩ RDS(ON) (at VGS=4.5V) <17mΩ <11.8mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN5X6B Top View Bottom View PIN1 Top View Bottom View PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G ID TC=100°C Pulsed Drain Current C Avalanche Current Units V ±20 ±20 V 16 18 12 14 64 72 14 18G 11.5 14 IDM TA=25°C Continuous Drain Current Max Q2 IDSM TA=70°C C 30 A A IAS 19 25 A Avalanche Energy L=0.05mH C EAS 9 16 mJ VDS Spike VSPIKE V 100ns TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: September 2013 Steady-State Steady-State 36 13 2.9 5.2 3.5 3.9 2.3 2.5 TJ, TSTG Symbol t ≤ 10s 36 7.3 RθJA RθJC -55 to 150 Typ Q1 29 55 13.8 www.aosmd.com Typ Q2 26 50 7.7 Max Q1 35 66 17 W W °C Max Q2 32 60 9.5 Units °C/W °C/W °C/W Page 1 of 10 AON6946 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.2 VGS=10V, ID=13A TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=13A 0.9 Units V 1 TJ=55°C VDS=5V, ID=13A Max 30 VDS=30V, VGS=0V IDSS Coss Typ 1.8 ±100 nA 2.2 V 9.6 11.6 13.4 16.2 13.6 17 50 0.7 µA mΩ mΩ S 1 V 9 A 485 pF 235 pF 32 pF 1.8 2.7 Ω 8 15 nC 3.9 8 nC 1.1 nC Gate Drain Charge 2.1 nC tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 2.8 ns 16.3 ns tf Turn-Off Fall Time 3 ns trr Body Diode Reverse Recovery Time Qrr IF=13A, dI/dt=500A/µs 9.9 Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs 12.9 ns nC VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: September 2013 www.aosmd.com Page 2 of 10 AON6946 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 4.5V VDS=5V 4V 6V 50 50 40 3.5V ID(A) ID (A) 40 30 30 125°C 20 20 VGS=3V 10 25°C 10 0 0 0 1 2 3 4 0 5 20 2 3 4 5 6 Normalized On-Resistance 1.6 VGS=4.5V 15 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 VGS=10V 5 VGS=10V ID=13A 1.4 1.2 VGS=4.5V ID=10A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 25 1.0E+02 ID=13A ID=11.5A 1.0E+01 20 1.0E+00 15 IS (A) RDS(ON) (mΩ Ω) 125°C 125°C 10 125°C 1.0E-01 1.0E-02 1.0E-03 25°C 5 25°C 1.0E-04 25°C 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: September 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 AON6946 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=15V ID=13A 8 Ciss Capacitance (pF) VGS (Volts) 600 6 4 400 Coss 200 2 Crss 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 TJ(Max)=150°C TC=25°C 160 100.0 10µs RDS(ON) limited 10.0 100us 1ms 1.0 120 80 100ms TJ(Max)=150°C TC=25°C 0.1 Power (W) ID (Amps) 5 DC 40 0.0 0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=17°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: September 2013 www.aosmd.com Page 4 of 10 AON6946 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 8 Current rating ID(A) Power Dissipation (W) 10 6 4 15 10 2 0 5 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=66°C/W 40 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: September 2013 www.aosmd.com Page 5 of 10 AON6946 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.2 VGS=10V, ID=15A TJ=125°C IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=15A 0.6 nA 2.2 V 7.8 10.6 11.8 mΩ 1 V 15 A 0.7 IS=1A,VGS=0V ±100 6.5 100 Forward Transconductance Diode Forward Voltage µA 8.8 9.4 VSD Output Capacitance 1.8 VGS=4.5V, ID=10A gFS Units V 1 TJ=55°C VDS=5V, ID=15A Max 30 VDS=30V, VGS=0V IDSS Coss Typ mΩ S 807 pF 314 pF 40 pF 1.3 2 Ω 12.9 20 nC 6 12 nC 2.1 nC Gate Drain Charge 3 nC Turn-On DelayTime 4.8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω IF=15A, dI/dt=500A/µs 3.3 ns 18.8 ns 3.3 ns 11.3 ns nC 15 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: September 2013 www.aosmd.com Page 6 of 10 AON6946 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 4.5V VDS=5V 4V 50 50 40 ID(A) ID (A) 40 30 30 125°C 20 20 10 25°C 10 VGS=3V 0 0 0 1 2 3 4 5 0 15 2 3 4 5 6 Normalized On-Resistance 1.6 12 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 9 6 VGS=10V 3 0 VGS=10V ID=15A 1.4 1.2 VGS=4.5V ID=10A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 18 ID=15A 1.0E+01 15 125°C IS (A) RDS(ON) (mΩ Ω) 1.0E+00 12 9 125°C 1.0E-01 25°C 1.0E-02 6 1.0E-03 25°C 3 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: September 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 AON6946 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=15V ID=15A Ciss 800 Capacitance (pF) VGS (Volts) 8 6 4 200 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics Coss 400 2 0 15 Crss 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 500 1000.0 TJ(Max)=150°C TC=25°C 400 100.0 10µs RDS(ON) limited 10.0 100µs 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 Power (W) ID (Amps) 600 300 200 DC 100 0.0 0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=9.5°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: September 2013 www.aosmd.com Page 8 of 10 AON6946 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 15 Current rating ID(A) Power Dissipation (W) 20 10 5 15 10 5 0 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 Zθ JA Normalized Transient Thermal Resistance 10 1 0.001 0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: September 2013 www.aosmd.com Page 9 of 10 AON6946 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: September 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10