AON3601 Complementary Enhancement Mode Field Effect Transistor

AON3601
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AON3601 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be
used in power inverters, and other
applications.Standard Product AON3601 is Pb-
n-channel
VDS (V) = 30V
ID = 6.6A (VGS=10V)
RDS(ON)
< 29mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
free (meets ROHS & Sony 259 specifications).
p-channel
-30V
-5A (VGS = -10V)
RDS(ON)
< 52mΩ (VGS = -10V)
< 72mΩ (VGS = -4.5V)
DFN 3x3
Top View
D1
D2
Bottom View
S2
G2
D2
D2
S1
D1
G2
D1
G1
G1
S1
S2
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
Pulsed Drain Current
TA=70°C
B
TA=25°C
Power Dissipation
±20
±20
6.6
-5
ID
5.6
-4.2
IDM
30
-20
2
2
1.44
1.44
-55 to 150
-55 to 150
TA=25°C
Continuous Drain
Current A
TA=70°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t ≤ 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Max p-channel
-30
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
Typ
50
90
43
p-ch
p-ch
p-ch
45
80
40
Units
V
V
A
W
°C
Max Units
62.5 °C/W
110 °C/W
53 °C/W
62.5
110
50
°C/W
°C/W
°C/W
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AON3601
N-CHANNEL: Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, V DS=5V
20
VGS=4.5V, I D=5.5A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
VDS=5V, ID=6.6A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
1
V
10
nA
1.8
3
V
24.3
29
34
41
34.5
42
A
15.4
VGS=10V, VDS=15V, I D=6.6A
VGS=10V, VDS=15V, RL=2.3Ω,
RGEN=3Ω
mΩ
1
V
3
A
820
pF
102
pF
77
VGS=0V, VDS=0V, f=1MHz
mΩ
S
0.78
680
VGS=0V, VDS=15V, f=1MHz
µA
100
pF
3.6
Ω
13.84
17
nC
6.74
8.1
nC
3
1.82
nC
3.2
nC
4.6
ns
4.1
ns
20.6
ns
5.2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=6.6A, dI/dt=100A/µs
16.5
Body Diode Reverse Recovery Charge
IF=6.6A, dI/dt=100A/µs
7.8
Qrr
Units
5
TJ=125°C
Static Drain-Source On-Resistance
Coss
0.004
TJ=55°C
VGS=10V, I D=6.6A
IS
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
20
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 1: Feb 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3601
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
10V
25
6V
5V
4.5V
VDS=5V
16
4V
12
15
ID(A)
ID (A)
20
3.5V
8
10
125°C
VGS=3V
5
4
25°C
0
0
1
2
3
4
0
5
0
VDS (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
3.5
4
4.5
1.6
Normalized On-Resistance
50
RDS(ON) (mΩ)
1
VGS (Volts)
Figure 2: Transfer Characteristics
60
VGS=4.5V
40
30
20
VGS=10V
1.5
VGS=10V
ID=6.6A
1.4
VGS=4.5V
ID=5.5A
1.3
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
70
1.0E+01
1.0E+00
IS Amps
ID=5A
60
RDS(ON) (mΩ)
0.5
50
125°C
40
1.0E-01
1.0E-02
125°C
1.0E-03
30
25°C
1.0E-04
20
1.0E-05
25°C
0.0
10
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body diode characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
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AON3601
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=15V
ID=6.6A
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
0
2
4
6
8
10
12
Crss
0
14
0
5
Qg (nC)
Figure 7: Gate-Charge characteristics
100
30
TJ(Max)=150°C
TA=25°C
10µs
Power W
ID (Amps)
25
40
10ms
0.1s
1
20
30
100µs
1ms
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10
1s
20
10
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AON3601
P-CHANNEL: Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VGS(th)
ID(ON)
Conditions
Min
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
-30
Typ
-1
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-5A
RDS(ON)
Static Drain-Source On-Resistance
V
µA
-2
±100
-3
nA
V
39
54
60
52
70
72
gFS
VSD
IS
VGS=-4.5V, ID=-4.2A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
mΩ
-20
TJ=125°C
6
Units
-1
-5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
Max
A
8.6
-0.79
mΩ
-1
S
V
-2.8
A
900
pF
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=-15V, f=1MHz
Crss
Rg
120
75
VGS=0V, VDS=0V, f=1MHz
10
15
Ω
14.7
19
nC
VGS=-10V, VDS=-15V, ID=-5A
7.6
2
10
nC
nC
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
3.8
8.3
5
29
14
23.5
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V)
Qg (4.5V) Total Gate Charge (4.5V)
Qgs
Qgd
Gate Source Charge
Gate Drain Charge
tD(on)
tr
tD(off)
tf
trr
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Qrr
700
Turn-Off Fall Time
IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
pF
pF
nC
ns
ns
ns
ns
30
13.4
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Feb 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3601
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
20
-10V
-6V
-5V
-4.5V
VDS=-5V
8
15
6
10
-ID(A)
-ID (A)
-4V
-3.5V
VGS=-3V
5
4
125°C
2
0
0.00
2.00
3.00
4.00
5.00
0
1
2
3
4
-VGS(Volts)
Figure 2: Transfer Characteristics
100
Normalized On-Resistance
1.60E+00
80
RDS(ON) (mΩ)
72
0
1.00
-VDS (Volts)
Figure 1: On-Region Characteristics
VGS=-4.5V
60
VGS=-10V
40
20
VGS=-4.5V
ID=-4.2A
VGS=-10V
ID=-5A
1.40E+00
1.20E+00
1.00E+00
8.00E-01
1
3
5
7
9
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
160
140
1E+00
ID=-5A
120
1E-01
100
1E-02
-IS (A)
RDS(ON) (mΩ)
25°C
60
-2.5V
125°C
80
125°C
1E-03
25°C
1E-04
60
25°C
40
1E-05
1E-06
20
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON3601
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=-15V
ID=-5A
1000
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
800
600
400
Coss
200
0
0
0
2
4
6
8
10
12
14
16
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
TJ(Max)=150°C
TA=25°C
10
15
40
25
30
30
100µs
1ms
0.1s
20
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
10
5
72
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100
60
Crss
10ms
1
20
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
-VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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