AOD4184/AOI4184

AOD4184/AOI4184
40V N-Channel MOSFET
General Description
Product Summary
The AOD4184/AOI4184 used advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. With the excellent thermal resistance of
the DPAK package, those devices are well suited for high
current load applications.
VDS
40V
50A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 8mΩ
RDS(ON) (at VGS=4.5V)
< 11mΩ
100% UIS Tested
100% Rg Tested
TO-251A
IPAK
TO252
DPAK
TopView
D
Bottom View
Top View
Bottom View
D
D
G
D
S
G
D
S
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
Units
V
±20
V
A
120
12
IDSM
TA=70°C
Maximum
40
40
IDM
TA=25°C
D
50
ID
TC=100°C
S
G
D
A
9.5
Avalanche Current C
IAS, IAR
35
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
61
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.2. 0: July 2013
2.3
Steady-State
Steady-State
RθJA
RθJC
W
1.5
-55 to 175
TJ, TSTG
Symbol
t ≤ 10s
W
25
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
50
PD
TC=100°C
Typ
18
44
2.4
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°C
Max
22
55
3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD4184/AOI4184
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
40
1
TJ=55°C
µA
5
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
Units
V
VDS=40V, VGS=0V
IGSS
±100
nA
2.2
2.6
V
6.7
8
11
13
VGS=4.5V, ID=15A
8.5
11
mΩ
37
1
V
20
A
VGS=10V, ID=20A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
A
0.72
mΩ
S
1200
1500
1800
pF
150
215
280
pF
80
135
190
pF
2
3.5
5
Ω
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
21
27.2
33
nC
Qg(4.5V)
Total Gate Charge
10
13.6
16
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
nC
6.4
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
20
29
38
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
18
26
34
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
nC
4.5
6.4
ns
17.2
ns
29.6
ns
16.8
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2. 0: July 2013
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Page 2 of 6
AOD4184/AOI4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
VDS=5V
10V
100
4V
5V
80
80
ID(A)
ID (A)
60
60
3.5V
40
40
20
20
125°C
25°C
VGS=3V
0
0
0
1
2
3
4
2
5
10
3.5
4
4.5
Normalized On-Resistance
2.2
VGS=4.5V
9
RDS(ON) (mΩ
Ω)
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
8
7
VGS=10V
6
2
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
1.4
1.2
1
VGS=4.5V
ID=15A
0.8
0.6
5
0
5
-50
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
-25
0
25
50
75
100 125 150 175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
25
1.0E+02
ID=20A
1.0E+01
40
20
1.0E+00
IS (A)
RDS(ON) (mΩ
Ω)
2.5
15
125°C
10
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
1.0E-04
25°C
5
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2. 0: July 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
1.2
Page 3 of 6
AOD4184/AOI4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=20V
ID=20A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
1000
Coss
2
500
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
Crss
30
0
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
1000
1000.0
TJ(Max)=175°C
TC=25°C
10µs
100.0
10.0
800
10µs
RDS(ON)
limited
100µs
1ms
10ms
1.0
DC
TJ(Max)=175°C
TC=25°C
0.1
Power (W)
ID (Amps)
Ciss
1500
17
5
2
10
600
400
200
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.00001 0.0001 0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=3°C/W
1
0.1
Single Pulse
PD
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2. 0: July 2013
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Page 4 of 6
AOD4184/AOI4184
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
IAR (A) Peak Avalanche Current
60
Power Dissipation (W)
TA=25°C
TA=100°C
TA=150°C
50
40
30
20
10
TA=125°C
0
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
1000
60
TA=25°C
100
40
17
5
2
10
Power (W)
Current rating ID(A)
50
30
10
20
10
1
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
175
0
10
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.1
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2. 0: July 2013
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Page 5 of 6
AOD4184/AOI4184
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.2. 0: July 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6