AO6808

AO6808
20V Dual N-Channel MOSFET
General Description
Product Summary
The AO6808 uses advanced trench technology to provide excellent
RDS(ON), low gate charge and operation with gate voltages as low as
2.5V. This device is suitable for use as a load switch. It is ESD
protected.
VDS = 20V
ID = 6A
RDS(ON) = 19mΩ (typical)
RDS(ON) = 20mΩ (typical)
RDS(ON) = 21mΩ (typical)
RDS(ON) = 23mΩ (typical)
D2
D1
TSOP6
Top View
(VGS = 4.5V)
(VGS = 4.5V)
(VGS = 4.0V)
(VGS = 3.1V)
(VGS = 2.5V)
Bottom View
Top View
S1
1
6
G1
D1/D2
2
5
D1/D2
S2
3
4
G2
G1
G2
Pin
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Power Dissipation A
TA=70°C
±12
ID
B
4.6
4.6
3.7
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Rev.1.0: February 2014
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
A
60
PD
TA=70°C
Units
V
V
6
IDM
TA=25°C
Steady State
20
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
10 Sec
RθJA
RθJL
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1.3
0.8
0.8
0.5
-55 to 150
Typ
76
118
54
Max
95
150
68
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID = 250µA, VGS = 0V
Typ
Max
Units
20
V
VDS = 20V, VGS = 0V
1
µA
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±10V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = 250µA
0.5
ID(ON)
On state drain current
VGS = 4.5V, VDS = 5V
60
VGS = 4.5V, ID = 6.0A
15
19
23
21
27
33
VGS = 4.0V, ID = 5.5A
15
20
25
mΩ
VGS = 3.1V, ID = 5A
16
21
27
mΩ
VGS = 2.5V, ID = 2A
17
23
30
mΩ
1
V
1.3
A
780
pF
TJ = 55°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = 5V, ID = 6.0A
VSD
Diode Forward Voltage
IS = 1A,VGS = 0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
0.75
VGS=0V, VDS=10V, f=1MHz
VGS= 10V, VDS= 10V, ID= 6A
1
V
A
mΩ
34
0.65
620
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
µA
±10
TJ=125°C
RDS(ON)
5
S
125
pF
64
pF
16.2
21
nC
7.7
10
nC
Qgs
Gate Source Charge
1.5
nC
Qgd
tD(on)
Gate Drain Charge
2.7
nC
Turn-On DelayTime
236
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
25
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
9
VGS=10V, VDS=10V, RL=1.7Ω,
RGEN=3Ω
448
ns
9.5
µs
4.1
µs
33
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in
any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2014
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Page 1 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
40
3V
4.5V
VDS= 5V
50
30
2.5V
30
ID(A)
ID (A)
40
2V
20
20
10
VGS=1.5V
10
125°C
0
0
0
1
2
3
4
5
0.5
26
1.5
2
2.5
3
1.6
25
Normalized On
On-Resistance
VGS= 2.5V
24
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
23
VGS= 3.1V
22
VGS= 4.0V
21
20
VGS= 4.5V
ID= 6A
1.4
1.2
1.0
VGS= 4.5V
19
0
4
8
0.8
dI/dt=100A/µs
I12
F=-6.5A,16
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
55
45
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
ID= 6.0A
1E+01
1E+00
125°C
1E-01
35
IS (A)
RDS(ON) (mΩ
Ω)
25°C
1E-02
25°C
125°C
THIS PRODUCT HAS BEEN DESIGNED AND
QUALIFIED FOR THE CONSUMER
1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
25
1E-04
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
1E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
15
1E-06
1
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
V
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
SD
Figure 6: Body-Diode Characteristics
Rev.1.0: February 2014
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Page 1 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS= 10V
ID= 6A
800
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
600
400
2
200
0
0
Coss
Crss
0
3
6
9
12
15
18
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
RDS(ON)
limited
1
1ms
10ms
100mss
DC
10s
0.1
0.01
0.1
10
1
0.1
TJ(Max)=150°C
TA=25°C
IF=-6.5A, dI/dt=100A/µs
1
10
100
0.00001
VDS (Volts)
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=150°C/W
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
TJ(Max)=150°C
TA=25°C
100
10µs
Power (W)
ID (Amps)
20
1000
100µs
Zθ JA Normalized Transient
Thermal Resistance
15
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DDOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY
WITHOUT
T
Single
Pulse NOTICE.
0.001
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Rev.1.0: February 2014
0.001
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100
1000
Page 1 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: February 2014
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 2 of 5