AO4441

AO4441
60V P-Channel MOSFET
General Description
Product Summary
The AO4441 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
ID (at VGS=-10V)
-60V
-4A
RDS(ON) (at VGS=-10V)
< 100mΩ
RDS(ON) (at VGS = -4.5V)
< 130mΩ
VDS
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current A
VGS
TA=25°C
Pulsed Drain Current B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Rev.2.0: August 2013
Steady-State
Steady-State
A
3.1
W
2
TJ, TSTG
Symbol
t ≤ 10s
V
-20
PD
TA=70°C
±20
-3.1
IDM
TA=25°C
Power Dissipation A
Units
V
-4
ID
TA=70°C
Maximum
-60
RθJA
RθJL
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-55 to 150
Typ
24
54
21
°C
Max
40
75
30
Units
°C/W
°C/W
°C/W
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AO4441
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-60
-1
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-3A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
f=1MHz
Qgs
Gate Source Charge
Qgd
VGS=-10V, VDS=-30V, ID=-4A
Units
µA
±100
nA
-2.1
-3
V
80
100
130
102
130
10
-0.77
930
VGS=0V, VDS=-30V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
-5
-1
VGS=-10V, ID=-4A
VDS=-5V, ID=-4A
Max
V
VDS=-48V, VGS=0V
IGSS
Coss
Typ
mΩ
mΩ
S
-1
V
-4
A
1120
pF
85
pF
35
pF
7.2
9
Ω
16
20
nC
8
10
nC
2.5
nC
Gate Drain Charge
3.2
nC
tD(on)
Turn-On DelayTime
8
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-4A, dI/dt=100A/µs
27
Qrr
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
32
VGS=-10V, VDS=-30V, RL=7.5Ω,
RGEN=3Ω
3.8
ns
31.5
ns
7.5
ns
35
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: August 2013
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Page 2 of 5
AO4441
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
-6V
15
VDS=-5V
-4.5V
-4V
-5V
-10V
8
-ID(A)
-ID (A)
6
10
-3.5V
125°C
4
25°C
5
2
VGS=-3V
0
0
0
1
2
3
4
0
5
1
110
3
4
5
6
Normalized On-Resistance
2.00
1.80
100
RDS(ON) (mΩ
Ω)
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-10V
ID=-4A
1.60
VGS=-4.5V
90
1.40
1.20
VGS=-10V
80
VGS=-4.5V
ID=-3A
1.00
0.80
70
0
2
0
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
200
1.0E+01
ID=-4A
180
1.0E+00
1.0E-01
-IS (A)
RDS(ON) (mΩ
Ω)
160
140
125°C
120
125°C
1.0E-02
25°C
1.0E-03
100
1.0E-04
25°C
80
1.0E-05
60
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.2.0: August 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4441
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=-30V
ID=-4A
1200
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
900
600
Coss
Crss
300
0
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
40
100.0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
10.0
100µs
Power (W)
-ID (Amps)
30
1ms
1.0
1s
TJ(Max)=150°C
TA=25°C
20
10
10ms
10s
0.1s
DC
0
0.1
0.1
1
10
0.001
100
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
-VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Zθ JA Normalized Transient
Thermal Resistance
25
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.2.0: August 2013
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Page 4 of 5
AO4441
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.2.0: August 2013
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5