AO4306

AO4306
30V N-Channel MOSFET
General Description
Product Summary
The AO4306 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
ID (at VGS=10V)
VDS
30V
13A
RDS(ON) (at VGS=10V)
< 11.5mΩ
RDS(ON) (at VGS = 4.5V)
< 15.5mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
C
Units
V
±20
V
13
ID
TA=70°C
Maximum
30
10.4
A
IDM
100
Avalanche Current C
IAS
22
A
Avalanche energy L=0.1mH C
TA=25°C
EAS
24
mJ
Pulsed Drain Current
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: October 2014
3.1
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
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-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
VGS=10V, ID=12A
TJ=125°C
VGS=4.5V, ID=10A
gFS
Forward Transconductance
VDS=5V, ID=12A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
nA
1.9
2.5
V
9.5
11.5
14
17
12.5
15.5
mΩ
1
V
4
A
A
45
0.75
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
µA
5
VGS(th)
VGS=0V, VDS=15V, f=1MHz
0.8
mΩ
S
760
pF
125
pF
70
VGS=0V, VDS=0V, f=1MHz
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
1.6
pF
2.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14
25
nC
Qg(4.5V) Total Gate Charge
6.6
12
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, ID=12A
VGS=4.5V, VDS=15V, ID=12A
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
2.4
nC
3
nC
2.4
nC
3
nC
4.4
ns
9
ns
17
ns
6
ns
IF=12A, dI/dt=500A/µs
7
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
8
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
6V
10V
VDS=5V
5V
80
25
7V
20
4.5V
ID(A)
ID (A)
60
4V
15
40
10
125°C
3.5V
20
5
VGS=3V
0
0
1
2
3
4
25°C
0
1
5
18
2
2.5
3
3.5
4
Normalized On-Resistance
1.8
16
RDS(ON) (mΩ)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
14
12
10
VGS=10V
8
VGS=10V
ID=12A
1.6
1.4
17
5
2
VGS=4.5V
10
1.2
ID=10A
1
0.8
6
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
30
1.0E+02
ID=12A
1.0E+01
25
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
20
15
10
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
25°C
5
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: October 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=12A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
800
600
400
Coss
200
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
0
100
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000.0
TA=25°C
IAR (A) Peak Avalanche Current
Crss
0
TA=100°C
100.0
ID (Amps)
TA=150°C
10
TA=125°C
10.0
10
100
1000
1ms
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
0.0
0.01
1
100µs
1.0
0.1
1
10µs
RDS(ON)
limited
DC
0.1
1
10
100
VDS (Volts)
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note C)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
1000
TA=25°C
Power (W)
100
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev.1.0: October 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
Ton
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: October 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6