AOT440

AOT440
40V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AOT440 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge & low Qrr.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
VDS
40V
ID (at VGS=10V)
105A
RDS(ON) (at VGS=10V)
< 4.7mΩ
RDS(ON) (at VGS = 4.5V)
<6mΩ
100% UIS Tested
100% Rg Tested
TO220
Top View
D
Bottom View
D
D
G
D
SD
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.2. 0: August 2013
IAS,IAR
40
A
EAS,EAR
80
mJ
150
Steady-State
Steady-State
W
75
2.1
RθJA
RθJC
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W
1.3
TJ, TSTG
Symbol
t ≤ 10s
A
12
PDSM
Junction and Storage Temperature Range
A
15.5
PD
TA=25°C
V
82
IDSM
TA=70°C
±20
330
IDM
TA=25°C
Continuous Drain
Current
Units
V
105
ID
TC=100°C
Maximum
40
-55 to 175
Typ
12
48
0.6
°C
Max
15
60
1
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOT440
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Min
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
Typ
Max
40
V
VDS=40V, VGS=0V
10
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=5V ,ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
330
VGS=10V, ID=20A
3.9
4.7
6.1
7.3
6
TJ=55°C
50
1.3
1.8
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
4.8
gFS
Forward Transconductance
VDS=5V, ID=20A
95
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
Units
VGS=10V, VDS=20V, ID=20A
0.65
µA
±100
nA
2.3
V
A
mΩ
mΩ
S
1
105
V
A
3730
4666
5600
pF
520
744
970
pF
160
269
380
pF
0.5
1
1.5
Ω
60
75
90
nC
28
36
45
nC
8.5
10.5
12.5
nC
10
17
25
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
13
16
19
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
30
38
45
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
15
ns
18
ns
52
ns
23
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2. 0: August 2013
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Page 2 of 7
AOT440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
150
10V
VDS=5V
4V
5V
120
120
3.5V
6V
90
ID(A)
ID (A)
90
60
60
VGS=3V
30
30
0
0
125°C
25°C
0
1
2
3
4
1
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
7
3
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5
Normalized On-Resistance
2
6
RDS(ON) (mΩ
Ω)
2
VGS=4.5V
5
4
VGS=10V
3
2
1.8
VGS=10V
ID=20A
1.6
17
5
2
VGS=4.5V 10
1.4
1.2
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
12
1.0E+02
ID=20A
1.0E+01
10
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
8
6
125°C
1.0E-01
1.0E-02
25°C
4
1.0E-03
25°C
2
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2. 0: August 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOT440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
7000
VDS=20V
ID=20A
6000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
5000
4000
3000
Coss
2000
2
1000
0
Crss
0
0
20
40
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
80
0
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
5000
1000.0
TJ(Max)=175°C
TC=25°C
10µs
100.0
10µs
RDS(ON)
4000
1ms
10.0
DC
1.0
10ms
TJ(Max)=175°C
Power (W)
ID (Amps)
100µs
17
5
2
10
3000
2000
1000
0.1
0
0.0
0.01
0.1
1
10
100
0.00001 0.0001
VDS (Volts)
0.001
0.01
0.1
01
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
40
RθJC=1°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2. 0: August 2013
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Page 4 of 7
AOT440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
10
TA=125°C
150
120
90
60
30
0
1
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
120
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
1000
100
TA=25°C
80
Power (W)
Current rating ID(A)
175
60
40
100
17
5
2
10
10
20
0
1
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
0.001
Zθ JA Normalized Transient
Thermal Resistance
0.1
1
10
0100
1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.01
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2. 0: August 2013
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Page 5 of 7
AOT440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
12
25ºC
25ºC
12
8
30
2
trr
125ºC
1.5
10
S
Qrr
40
Irm (A)
Qrr (nC)
14
10
50
2.5
125ºC
di/dt=800A/µs
16
trr (ns)
60
18
125ºC
di/dt=800A/µs
8
Irm
6
S
4
25ºC
10
4
0
5
10
15
20
25
0
30
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
70
15
Is=20A
60
5
10
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
25
2.5
Is=20A
125ºC
12
20
2
125ºC
50
trr
30
125ºC
Qrr
6
15
1.5
25ºC
S
9
25ºC
trr (ns)
40
Irm (A)
Qrr (nC)
0.5
125ºC
2
0
1
25ºC
6
20
10
1
25ºC
20
S
10
3
25ºC
Irm
0.5
125ºC
0
0
0
5
200
400
600
800
0
1000
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Rev.2. 0: August 2013
www.aosmd.com
0
0
200
400
600
800
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
1000
Page 6 of 7
AOT440
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.2. 0: August 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7