AO4948

AO4948
30V Dual N-Channel MOSFET
SRFET
General Description
Product Summary
The AO4948 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further.
FET1(N-Channel)
VDS= 30V
FET2(N-Channel)
30V
ID= 8.8A (VGS=10V)
8A (VGS=10V)
• RoHS and Halogen-Free Compliant
RDS(ON)
RDS(ON)
< 16mΩ (VGS=10V)
< 19mΩ (VGS=10V)
< 22mΩ (VGS=4.5V)
< 28mΩ (VGS=4.5V)
100% UIS Tested
100% Rg Tested
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Bottom View
Top View
S1
D1
D1
D1
D2
G1
S2
G2
TM
D2
G2
G1
D2
S2
S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
±20
±20
V
8.8
8
7.1
6.5
IDM
60
40
IAS, IAR
21
13
A
EAS, EAR
66
25
mJ
2
2
1.3
1.3
ID
TA=70°C
C
Avalanche energy L=0.3mH
C
TA=25°C
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.4.0: July 2013
Units
V
VGS
TA=25°C
Avalanche Current C
Power Dissipation B
Max FET2
30
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
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-55 to 150
Typ
48
74
32
A
W
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 8
AO4948
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250uA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.1
VGS=10V, VDS=5V
60
V
TJ=125°C
VGS=10V, ID=8.8A
20
100
nA
2.2
V
13.3
16
20
25
22
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
18
gFS
Forward Transconductance
VDS=5V, ID=8.8A
29
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode + Schottky Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
0.41
1267
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
mA
1.65
RDS(ON)
Output Capacitance
Units
0.1
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
mΩ
mΩ
S
0.5
V
3.5
A
1600
pF
308
pF
118
pF
Ω
1.3
2.0
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
21
30
Qg(4.5V) Total Gate Charge
10.4
nC
VGS=10V, VDS=15V, ID=8.8A
nC
Qgs
Gate Source Charge
3
nC
Qgd
Gate Drain Charge
3.6
nC
tD(on)
Turn-On DelayTime
5.2
ns
tr
Turn-On Rise Time
3.8
ns
tD(off)
Turn-Off DelayTime
21.2
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8.8A, dI/dt=300A/µs
11.2
Qrr
Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=300A/µs
10.5
VGS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
4.4
ns
15
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: July 2013
www.aosmd.com
Page 2 of 8
AO4948
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
10V
VDS=5V
5V
6V
25
80
4.5V
7V
20
ID(A)
ID (A)
60
4V
15
40
10
3.5V
20
5
VGS=3V
25°C
0
0
0
1
2
3
4
5
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
Normalized On-Resistance
20
18
RDS(ON) (mΩ
Ω)
125°C
VGS=4.5V
16
14
12
VGS=10V
10
VGS=10V
ID=8.8A
1.6
1.4
17
5
2
VGS=4.5V10
1.2
ID=7A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
40
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=8.8A
35
1.0E+01
30
1.0E+00
25
125°C
20
IS (A)
RDS(ON) (mΩ
Ω)
125°C
40
15
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
10
1.0E-04
5
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.4.0: July 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 8
AO4948
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
VDS=15V
ID=8.8A
1500
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1000
Coss
500
2
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
25
100.0
5
10 V (Volts)
15
20
25
DS
Figure 8: Capacitance Characteristics
30
1000
1ms
10ms
TJ(Max)=150°C
TA=25°C
DC
100
Power (W)
100µs
1.0
0.1
TA=25°C
10µs
RDS(ON)
limited
10.0
ID (Amps)
Crss
0
0
10
10s
1
0.0
0.01
0.1
1
VDS (Volts)
10
1E-05
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
Rev.4.0: July 2013
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
Page 4 of 8
AO4948
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±16V
VGS(th)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A
ID(ON)
Min
Conditions
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
5
1.2
VGS=4.5V, ID=4A
VDS=5V, ID=8A
IS=1A,VGS=0V
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
µA
10
µA
1.8
2.4
V
15.5
19
21
25
18.6
28
40
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Units
1
TJ=125°C
Static Drain-Source On-Resistance
Max
30
TJ=55°C
RDS(ON)
Coss
Typ
A
30
0.75
mΩ
mΩ
S
1
V
2.5
A
600
740
888
pF
77
110
145
pF
50
82
115
pF
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
6
7.5
9
nC
2
2.5
3
nC
2
3
5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=10V, VDS=15V, ID=8A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
5
ns
3.5
ns
19
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=500A/µs
6
8
10
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14
18
22
3.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: July 2013
www.aosmd.com
Page 5 of 8
AO4948
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
VDS=5V
4V
25
25
3.5V
5V
20
ID(A)
ID (A)
20
3V
15
15
10
10
VGS=2.5V
5
25°C
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
5
1.5
2
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
30
Normalized On-Resistance
1.6
25
RDS(ON) (mΩ
Ω)
125°C
5
VGS=4.5V
20
15
VGS=10V
10
VGS=10V
ID=8A
1.4
17
5
VGS=4.5V
2
ID=4A
10
1.2
1
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
40
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=8A
1.0E+01
35
40
1.0E+00
25
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
30
1.0E-01
125°C
1.0E-02
20
1.0E-03
15
25°C
25°C
1.0E-04
10
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.4.0: July 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 6 of 8
AO4948
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=8A
1000
8
Capacitance (pF)
VGS (Volts)
Ciss
6
4
800
600
400
Coss
2
200
0
0
Crss
0
3
6 g (nC)
9
12
Q
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100.0
1ms
10ms
DC
TJ(Max)=150°C
TA=25°C
100
Power (W)
100µs
1.0
0.1
TA=25°C
10µs
RDS(ON)
limited
10.0
-ID (Amps)
0
15
10
10s
0.0
1
0.01
0.1
1
-VDS (Volts)
10
100
1E-05
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.4.0: July 2013
www.aosmd.com
Page 7 of 8
AO4948
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.4.0: July 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 8 of 8