AON7520 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application VDS 30V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 1.8mΩ RDS(ON) (at VGS=4.5V) < 2.1mΩ RDS(ON) (at VGS=2.5V) < 3.1mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • Load switch, battery switch in portable devices DFN 3.3x3.3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.05mH VDS Spike Power Dissipation B C 100ns TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: May 2013 IAS 60 A EAS 90 mJ VSPIKE 36 V 83.3 Steady-State Steady-State W 33.3 6.2 RθJA RθJC W 4 TJ, TSTG Symbol t ≤ 10s A 38 PDSM TA=70°C A 48 PD TC=100°C V 200 IDSM TA=70°C ±12 39 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 30 -55 to 150 Typ 16 45 1.1 www.aosmd.com °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7520 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±10V Gate Threshold Voltage VDS=VGS, ID=250µA VGS=10V, ID=20A Static Drain-Source On-Resistance 0.85 1.8 VGS=4.5V, ID=20A 1.66 2.1 VGS=2.5V, ID=20A 2.35 3.1 125 VSD Diode Forward Voltage IS=1A,VGS=0V 0.61 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance V 2.6 VDS=5V, ID=20A Crss µA 1.2 1.45 Forward Transconductance Output Capacitance ±10 2.05 TJ=125°C gFS Coss µA 5 0.5 VGS=0V, VDS=15V, f=1MHz S V 50 A 4175 pF 1505 pF pF Ω 1 1.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 77.5 105 nC Qg(4.5V) Total Gate Charge 37 50 nC VGS=10V, VDS=15V, ID=20A 0.5 mΩ 1 300 VGS=0V, VDS=0V, f=1MHz Units V 1 TJ=125°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 40.7 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6 nC 12.5 nC 6.5 ns 7 ns 58.5 ns 17.5 ns 20.3 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0 May 2013 www.aosmd.com Page 2 of 6 AON7520 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 180 2.5V 10V 2V VDS=5V 150 150 4.5V 120 ID(A) ID (A) 120 90 125°C 90 60 60 VGS=1.5V 30 25°C 30 0 0 0 1 2 3 4 0 5 4 1 1.5 2 2.5 3 Normalized On-Resistance 1.8 3 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V 2 VGS=4.5V VGS=10V 1 VGS=4.5V ID=20A 1.6 1.4 VGS=10V ID=20A 1.2 VGS=2.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 4.5 1.0E+02 ID=20A 4 1.0E+01 3.5 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 3 2.5 2 1.5 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 1 125°C 1.0E-04 0.5 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0 May 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7520 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 4000 3000 Coss 2000 1000 0 Crss 0 0 20 40 60 80 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 500 10µs RDS(ON) limited 10µs 100µs 10.0 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 400 Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 5 300 200 100 0.0 0.01 0.1 1 10 0 0.0001 100 VDS (Volts) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) VGS> or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.5°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0 May 2013 www.aosmd.com Page 4 of 6 AON7520 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 80 Current rating ID(A) Power Dissipation (W) 100 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 0 25 TCASE (° °C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0 May 2013 www.aosmd.com Page 5 of 6 AON7520 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0 May 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6