AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1413 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. -RoHS Compliant -Halogen and Antimony Free Green Device* VDS (V) = -30V ID = -38A (VGS = -10V) RDS(ON) < 17mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) ESD Protected! D Ultra SO-8TM Top View D S G Bottom tab connected to drain S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C ID IDM -7 38 PD TC=100°C Junction and Storage Temperature Range 2.1 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 19 PDSM TA=70°C Alpha & Omega Semiconductor, Ltd. A -70 IDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B V -9 TA=25°C Power Dissipation A ±25 -27 TA=25°C TC=25°C Power Dissipation B Units V -38 TC=100°C Pulsed Drain Current C Continuous Drain Current A Maximum -30 RθJA RθJC Typ 18 49 2.9 °C Max 25 60 4 Units °C/W °C/W °C/W www.aosmd.com AOL1413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250uA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -70 ±10 uA V 13.5 17 18.5 24 VGS=-5V, ID=-20A 28 36 VDS=-5V, ID=20A 27 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA -3.5 RDS(ON) Output Capacitance Units -2.5 VGS=-10V, ID=-20A Coss Max V VDS=-30V, VGS=0V IGSS IS Typ A -0.72 1760 VGS=0V, VDS=-15V, f=1MHz S -1 V -38 A 2200 pF 360 pF 255 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-20A mΩ pF 6.4 8 30 38 Ω nC 11 nC Qgs Gate Source Charge 7 nC Qgd Gate Drain Charge 8 nC tD(on) Turn-On DelayTime 11.5 ns tr Turn-On Rise Time 8 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 24 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 16 VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω 35 ns 18.5 ns 30 ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. * This device is guaranteed green after date code 8P11 (June 1ST 2008) Rev3:April, 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 25 60 -10V VDS=-5V 20 125°C 15 40 ID(A) ID(A) 50 -5V 30 20 10 -4.5V 25°C 5 10 VGS=-4V 0 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 5 2 40.0 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 5 1.8 Normalized On-Resistance ID=-20A RDS(ON) (mΩ) 30.0 VGS=-5V 20.0 10.0 VGS=-10V 1.6 VGS=-10V 1.4 1.2 VGS=-5V 1 0.0 0 5 10 15 20 0.8 25 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 150 200 1.0E+02 50 ID=20A 1.0E+01 125°C 40 1.0E+00 125°C 30 IS (A) RDS(ON) (mΩ) 100 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature TC=100°C TA=25°C 20 1.0E-01 25°C 1.0E-02 1.0E-03 -55 to 175 10 25°C 1.0E-04 1.0E-05 0 0 5 10 15 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 20 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.aosmd.com AOL1413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=-15V ID=-20A 6 4 2 1500 1000 Coss 500 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 35 0 1000 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 TJ(Max)=175°C TC=25°C 100 10 100µs 1ms DC 1 10ms 0.01 0.01 60 40 TJ(Max)=175°C TC=25°C 0.1 80 10µs RDS(ON) limited Power (W) ID (Amps) Ciss 2000 Capacitance (pF) VGS (Volts) 8 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 20 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 TC=100°C TA=25°C PD 0.1 -55 to 175 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1413 50 50 40 40 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TCASE (°C) Figure 13: Power De-rating (Note B) 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) 100000 Power (W) 10000 1000 100 10 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD 0.001 Ton Single Pulse 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1413 G ate C harge Test C ircuit & W aveform V gs Qg + VDC Q gs V ds Q gd + DUT - VDC -10V V gs Ig C harge Resistive Switching Test Circuit & W aveforms RL Vds t off t on Vgs VDC - DUT Vgs Rg td(on) t d(off) tr tf 90% Vdd + Vgs 10% Vds Unclam ped Inductive Switching (UIS) Test Circuit & W aveform s 2 L E AR= 1/2 LIAR Vds Vds Id VDC - Vgs Vgs + Rg BVDSS Vdd Id I AR DUT Vgs Vgs D iode R ecovery T est C ircuit & W aveform s Q rr = - Idt V ds + DUT V ds - Isd Vgs L V gs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd VDC - -I F t rr dI/dt -I R M Vdd -V ds www.aosmd.com