AOC2412

AOC2412
20V N-Channel MOSFET
General Description
Product Summary
The AOC2412 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V while retaining a 8V
VGS(MAX) rating.
VDS
20V
4.5A
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
< 23mΩ
RDS(ON) (at VGS=2.5V)
< 26mΩ
RDS(ON) (at VGS=1.8V)
< 30mΩ
Typical ESD protection
AlphaDFN 1.57x1.57_4
Top View
HBM Class 3A
D
Bottom View
Top View
Bottom View
3
2
D
D
S
G
G
Pin1(G)
4
1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Source Current (DC) Note1
TA=25°C
Source Current (Pulse) Note2
TA=25°C
Power Dissipation Note1
Junction and Storage Temperature Range
VGS
ID
Rev.1.0 : December 2013
±8
V
A
65
TJ, TSTG
www.aosmd.com
Units
V
4.5
IDM
PD
Thermal Characteristics
Parameter
Symbol
t ≤ 10s
Maximum Junction-to-Ambient A
RθJA
Maximum Junction-to-Ambient A D Steady-State
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
Maximum
20
Typ
140
190
0.55
W
-55 to 150
°C
Max
170
230
Units
°C/W
°C/W
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AOC2412
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
TJ=55°C
TJ=125°C
VGS=2.5V, ID=1A
mΩ
1
V
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
mΩ
30
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Qgs
23
29
22
IS=1A,VGS=0V
Gate resistance
18
22.5
30
Diode Forward Voltage
Rg
V
mΩ
VSD
Reverse Transfer Capacitance
µA
1.0
26
VDS=5V, ID=1.5A
Crss
±10
20
Forward Transconductance
Output Capacitance
0.7
VGS=1.8V, ID=1A
gFS
Coss
µA
5
0.4
Units
V
1
VGS=4.5V, ID=1.5A
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
0.65
1842
pF
245
pF
70
pF
2.7
KΩ
21.5
VGS=4.5V, VDS=10V, ID=1.5A
VGS=4.5V, VDS=10V, RL=6.67Ω,
RGEN=3Ω
IF=1.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=1.5A, dI/dt=100A/µs
S
32
nC
10.5
nC
4.5
nC
2.5
µs
4
µs
5
µs
8
µs
20
ns
nC
10
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 : December 2013
www.aosmd.com
Page 2 of 6
AOC2412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
70
VDS=5V
4.5V
60
60
50
50
40
30
ID(A)
ID (A)
2.5V
2.0V
40
30
125°C
20
20
VGS=1.5V
10
25°C
10
0
0
0
1
2
3
4
0
5
40
2
3
4
Normalized On-Resistance
1.4
30
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=1.8V
20
VGS=4.5V
VGS=2.5V
10
VGS=4.5V
ID=1.5A
VGS=2.5V
ID=1A
1.2
VGS=1.8V
ID=1A
1
0.8
0
0
1
0
2
3
4
5
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
35
1.0E+01
ID=1.5A
1.0E+00
125°C
1.0E-01
125°C
25
IS (A)
RDS(ON) (mΩ
Ω)
30
1.0E-02
20
1.0E-03
25°C
15
1.0E-04
25°C
1.0E-05
10
0
1
2
3
4
5
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0 : December 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOC2412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
3000
VDS=10V
ID=1.5A
2500
Capacitance (pF)
5
VGS (Volts)
4
3
2
1500
1000
Coss
1
500
0
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
1000.0
50
100.0
40
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
10.0
Power (W)
-ID (Amps)
Ciss
2000
100µs
1ms
1.0
30
20
10ms
10
TJ(Max)=150°C
TA=25°C
0.1
10s
0
DC
0.0
0.00001
0.01
0.1
1
-VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area
Figure 10: Single Pulse Power Rating Junction-toAmbient
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=230°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.1.0 : December 2013
www.aosmd.com
Page 4 of 6
AOC2412
Rev.1.0 : December 2013
www.aosmd.com
Page 5 of 6