AOD6N50

AOD6N50
500V,5.3A N-Channel MOSFET
General Description
Product Summary
The AOD6N50 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
VDS
[email protected]
ID (at VGS=10V)
5.3A
RDS(ON) (at VGS=10V)
< 1.4Ω
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
Top View
Bottom View
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current
TC=100°C
C
Maximum
500
Units
V
±30
V
5.3
ID
3.3
A
IDM
17
Avalanche Current C
IAR
2.8
A
Repetitive avalanche energy C
EAR
118
mJ
Single plused avalanche energy H
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
dv/dt
235
5
104
mJ
V/ns
W
0.83
-50 to 150
W/ oC
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Rev0: April 2012
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
Typical
43
Maximum
55
Units
°C/W
1
0.5
1.2
°C/W
°C/W
Page 1 of 6
AOD6N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V ID=250µA
VGS(th)
ID=250µA, VGS=0V, TJ=150°C
600
ID=250µA, VGS=0V
VDS=500V, VGS=0V
0.6
V
V/ oC
1
VDS=400V, TJ=125°C
10
±100
3.4
µA
4.1
4.5
nΑ
V
1.4
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2.5A
1.2
gFS
Forward Transconductance
VDS=40V, ID=2.5A
5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
5
A
ISM
Maximum Body-Diode Pulsed Current
17
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=400V, ID=5A
S
0.76
430
538
670
40
58
80
pF
2.5
4.5
7
pF
1.2
2.3
3.5
Ω
9
11.5
14
nC
3
3.8
4.6
nC
2
4.1
6.2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=5A,dI/dt=100A/µs,VDS=100V
145
182
220
Qrr
Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V
1.7
2.2
2.7
Body Diode Reverse Recovery Time
VGS=10V, VDS=250V, ID=5A,
RG=25Ω
pF
18
ns
32
ns
34
ns
22
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: April 2012
www.aosmd.com
Page 2 of 6
AOD6N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
100
10V
VDS=40V
8
-55°C
10
ID (A)
ID(A)
6.5V
6
6V
125°C
4
1
VGS=5.5V
2
25°C
0.1
0
0
5
10
15
20
25
2
30
4
3
3.5
2.5
Normalized On-Resistance
4.0
RDS(ON) (Ω
Ω)
3.0
VGS=10V
2.5
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
2.0
1.5
1.0
VGS=10V
ID=2.5A
2
1.5
1
0.5
0.5
0
0.0
-100
0
2
4
6
8
10
12
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
ID=30A
125°C
40
1.0E+00
1
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
125°
25°C
1.0E-01
1.0E-02
0.9
25°
1.0E-03
0.8
1.0E-04
-100
Rev0: April 2012
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
www.aosmd.com
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
AOD6N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=400V
ID=2.5A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
100
Crss
10
3
1
0
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
18
100
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
1000
800
RDS(ON)
limited
100µs
1
1ms
DC
10ms
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
10µs
10
ID (Amps)
1
TJ(Max)=150°C
TC=25°C
600
400
200
0.01
0
1
10
100
1000
0.0001
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: April 2012
www.aosmd.com
Page 4 of 6
AOD6N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
5
90
Current rating ID(A)
Power Dissipation (W)
120
60
30
4
3
2
1
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
500
TJ(Max)=150°C
TA=25°C
Power (W)
400
300
200
100
0
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
1
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
100
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev0: April 2012
www.aosmd.com
Page 5 of 6
AOD6N50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: April 2012
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6