AOK60B65M3 650V, 60A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 60A VCE(sat) (TJ=25°C) 1.94V Applications • Motor Drives • Welding Machines • UPS and Solar Inverters • Other hard switching applications Top View C TO-247 G G AOK60B65M3 Orderable Part Number C E Package Type E Form Minimum Order Quantity Tube 240 AOK60B65M3 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE AOK60B65M3 650 Units V ±30 V Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 180 A Turn off SOA, VCE ≤ 650V, Limited by TJmax I LM 180 A Continuous Diode Forward Current TC=25°C TC=100°C IF 120 60 60 30 A A Diode Pulsed Current, Limited by TJmax I FM 180 A Short circuit withstanding time 1) VGE = 15V, VCC ≤ 400V, TJ ≤ 175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG 500 250 -55 to 175 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 TL Thermal Characteristics AOK60B65M3 Parameter Symbol R θ JA 40 Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case R θ JC 0.3 Maximum Diode Junction-to-Case R θ JC 1 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev.1.0: April 2015 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=60A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=60A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.94 2.45 TJ=125°C - 2.35 - TJ=175°C - 2.6 - V TJ=25°C - 1.91 2.4 TJ=125°C - 2.15 - TJ=175°C - 2.1 - - 4.8 - V V TJ=25°C - - 10 TJ=125°C - - 1000 TJ=175°C - - 15000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=60A - 35 - S - 2800 - pF - 330 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 118 - pF Qg Total Gate Charge - 106 - nC Q ge Gate to Emitter Charge - 35 - nC Q gc Gate to Collector Charge - 41 - nC - 222 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 14 - Ω ns I C(SC) VGE=15V, VCC=520V, IC=60A VGE=15V, VCC=400V, tsc≤5us, TJ≤175°C Short circuit collector current t D(on) Turn-On DelayTime - 44 - tr Turn-On Rise Time - 84 - ns t D(off) Turn-Off Delay Time - 166 - ns tf Turn-Off Fall Time - 75 - ns E on Turn-On Energy - 2.6 - mJ E off Turn-Off Energy - 1.3 - mJ E total t rr Total Switching Energy - 3.9 - mJ Diode Reverse Recovery Time - 346 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=60A, RG=5Ω - 1.3 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 7.5 - A t D(on) Turn-On DelayTime - 42 - ns tr Turn-On Rise Time - 83 - ns t D(off) Turn-Off Delay Time - 208 - ns tf Turn-Off Fall Time - 77 - ns E on Turn-On Energy - 2.9 - mJ E off Turn-Off Energy - 1.9 - mJ E total t rr Total Switching Energy - 4.8 - mJ Diode Reverse Recovery Time - 557 - Q rr Diode Reverse Recovery Charge - 3.1 - ns µC I rm Diode Peak Reverse Recovery Current - 11 - A TJ=25°C IF=60A,dI/dt=200A/µs,VCC=400V I rm TJ=175°C VGE=15V, VCC=400V, IC=60A, RG=5Ω TJ=175°C IF=60A,dI/dt=200A/µs,VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015 www.aosmd.com Page 2 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 180 20V 150 13V 15V 120 120 IC (A) IC (A) 20V 17V 15V 17V 160 11V 13V 90 11V 80 60 9V 40 9V 30 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 6 7 0 100 1 2 3 4 5 VCE(V) Fig 2: Output Characteristic (Tj=175°C ) -40°C 100 80 80 60 175°C IF (A) IC (A) 7 120 VCE=20V 175°C 60 25°C 40 40 25°C 20 20 -40°C 0 0 3 6 9 12 15 0 1 VGE(V) Fig 3: Transfer Characteristic 2 7.5 4 6 3.2 IC=120A 4 5 120A 4.5 3 3 VF (V) Fig 4: Diode Characteristic VSD (V) VCE(sat) (V) 6 2.4 60A 1.6 IC=60A 5A 1.5 0.8 IC=30A IF=1A 0 0 0 25 50 75 100 125 150 175 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: April 2015 www.aosmd.com 0 25 50 75 100 125 150 175 Temperature (°C ) Fig 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 100000 VCE=520V IC=60A 12 Capacitance (pF) VGE(V) 10000 9 6 3 Cies 1000 Coes 100 Cres 0 10 0 20 40 60 80 100 Qg(nC) Fig 7: Gate-Charge Characteristics 120 0 8 16 24 32 40 VCE(V) Fig 8: Capacitance Characteristic 600 Power Disspation (W) 500 400 300 200 100 0 25 50 75 100 125 150 175 TCASE(°C) Fig 10: Power Disspation as a Function of Case 150 1E-02 1E-03 1E-04 90 ICE(S) (A) Current rating IC(A) 120 60 VCE=650V 1E-05 1E-06 30 VCE=520V 1E-07 0 1E-08 25 50 75 100 125 150 175 Rev.1.0: April 2015 0 25 50 75 100 125 150 175 Temperature (°C ) Fig 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE(°C) Fig 11: Current De-rating www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 Switching Time (nS) 1000 Switching Time (nS) 10000 Td(off) Tf Td(on) Tr 100 10 1 100 10 1 20 40 60 80 100 0 120 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C,VGE=15V,VCE=400V,Rg=5Ω) 10000 30 40 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C,VGE=15V,VCE=400V,IC=60A) 50 6 VGE(TH)(V) Switching Time (nS) 20 7 Td(off) Tf Td(on) Tr 1000 10 100 5 4 3 10 2 1 1 25 Rev.1.0: April 2015 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V,VCE=400V,IC=60A,Rg=5Ω) 175 www.aosmd.com 0 25 50 75 100 125 150 175 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 Eoff Eoff 8 Switching Energy (mJ) 16 SwitchIng Energy (mJ) Eon Eon Etotal 12 8 4 Etotal 6 4 2 0 0 20 40 60 80 100 120 0 IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C,VGE=15V,VCE=400V,Rg=5Ω) 10 30 40 50 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C,VGE=15V,VCE=400V,IC=60A) 7 7 Eoff Eoff 6 6 Eon Switching Energ y (mJ) Switching Energy (mJ) 20 Etotal 5 4 3 2 1 Eon Etotal 5 4 3 2 1 0 0 25 50 75 100 125 150 175 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=60A,Rg=5Ω) Rev.1.0: April 2015 www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C,VGE=15V,IC=60A,Rg=5Ω) Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 50 3000 500 40 175°C 15 175°C 2400 Trr 30 Qrr 1800 25°C 20 Trr (nS) 400 Irm(A) 1200 12 300 9 25°C 200 6 175°C 175°C 10 600 100 0 0 20 40 60 80 3 25°C Irm 25°C 100 0 120 4200 3500 0 20 IF(A) Fig 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µs) 90 600 75 500 1400 175°C 700 25°C 0 200 15 100 100 120 175°C 20 Trr 16 12 25°C www.aosmd.com S 4 25°C 0 400 500 600 700 di/dt (A/µS) Fig 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=60A) 8 175°C Irm 300 Rev.1.0: April 2015 80 300 30 0 200 Trr (nS) 45 25°C 60 24 400 60 Qrr Irm(A) Qrr (nC) 2800 40 IF (A) Fig 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µs) 175°C 2100 S 200 300 400 S Qrr (nC) 18 S 3600 500 0 600 700 di/dt (A/µS) Fig 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=60A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: April 2015 www.aosmd.com Page 8 of 9 Rev.1.0: April 2015 www.aosmd.com Page 9 of 9