AOK20B120D1

AOK20B120D1
1200V, 20A Alpha IGBT
General Description
TM
with Diode
Product Summary
• Latest AlphaIGBT (α IGBT) technology
• Best in Class VCE(SAT) enables high efficiencies
• Low turn-off switching loss due to fast turn-off time
• Very smooth turn-off current waveforms reduce EMI
• Better thermal management
• High surge current capability
• Minimal gate spike due to high input capacitance
VCE
IC (TC=100°C)
1200V
20A
VCE(sat) (TC=25°C)
1.54V
Applications
• Induction Cooking
• Rice Cookers
• Microwave Ovens
• Other soft switching applications
Top View
C
TO-247
G
AOK20B120D1
C
E
E
G
Orderable Part Number
Package Type
AOK20B120D1
TO247
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V CE
V GE
Gate-Emitter Voltage
Continuous Collector TC=25°C
TC=100°C
Current
Pulsed Collector Current, Limited by TJmax
Non repetitive peak collector currentA
Turn off SOA, VCE ≤ 600V, Limited by TJmax
Continuous Diode
Forward Current
TC=25°C
TC=100°C
Diode Pulsed Current, Limited by TJmax
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
IC
Form
Minimum Order Quantity
Tube
240
AOK20B120D1
1200
Units
V
±30
40
V
20
A
I Cpulse
80
A
I CSM
200
A
I LM
80
A
40
IF
20
I Fpulse
PD
T J , T STG
TL
Symbol
R θ JA
R θ JC
R θ JC
80
340
170
A
A
W
-55 to 175
°C
300
°C
AOK20B120D1
40
0.44
Units
°C/W
°C/W
1.20
°C/W
Note A: Capacitor charging saturation current limited by Tjmax<175°C and tp<3µs
Rev.2.0: February 2015
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Page 1 of 8
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
IC=1mA, VGE=0V, TJ=25°C
1200
-
-
V
V CE(sat)
VGE=15V, IC=20A
Symbol
VF
Collector-Emitter Saturation Voltage
Diode Forward Voltage
VGE=0V, IC=20A
V GE(th)
Gate-Emitter Threshold Voltage
VCE=5V, IC=1mA
I CES
Zero Gate Voltage Collector Current
VCE=1200V, VGE=0V
TJ=25°C
-
1.54
1.8
TJ=125°C
-
1.82
-
TJ=175°C
-
1.97
-
TJ=25°C
-
1.33
1.7
TJ=125°C
-
1.39
-
TJ=175°C
-
1.38
-
-
5.2
-
TJ=25°C
-
-
10
TJ=125°C
-
-
800
TJ=175°C
-
-
8000
V
V
V
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±30V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=20A
-
24
-
S
-
1900
-
pF
-
109
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCE=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
32
-
pF
Qg
Total Gate Charge
-
67.5
-
nC
Q ge
Gate to Emitter Charge
-
16
-
nC
Q gc
Gate to Collector Charge
-
31
-
nC
-
1.85
-
Ω
TJ=25°C
VGE=15V, VCE=600V, IC=20A,
RG=15Ω,
Parasitic Inductance=150nH
-
152
-
ns
-
118
-
ns
-
0.94
-
mJ
TJ=175°C
VGE=15V, VCE=600V, IC=20A,
RG=15Ω,
Parasitic Inductance=150nH
-
179
-
ns
-
244
-
ns
-
1.05
-
mJ
VGE=15V, VCE=960V, IC=20A
VGE=0V, VCE=0V, f=1MHz
Gate resistance
Rg
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
t D(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
E off
Turn-Off Energy
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
t D(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
E off
Turn-Off Energy
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: February 2015
www.aosmd.com
Page 2 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
200
20V
20V
17V
17V
13V
15V
100
15V
90
IC (A)
IC (A)
150
120
11V
13V
11V
60
9V
50
30
VGE=7V
9V
VGE= 7V
0
0
0
1
2
3
4
5
6
0
7
2
3
4
5
6
7
100
100
VCE=20V
-40°C
80
80
60
60
25°C
IF (A)
IC (A)
1
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
40
40
175°C
175°C
20
20
25°C
-40°C
0
0
4
7
10
13
0.5
16
VGE(V)
Fig 3: Transfer Characteristic
1.5
2.0
2.5
3.0
3.5
4.0
VF (V)
Fig 4: Diode Characteristic
8
5
7
3
VGE(TH)(V)
4
VCE(sat) (V)
1.0
IC=40A
IC=20A
2
6
5
4
1
IC=10A
3
0
2
0
25
50
75
100
125
150
175
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.2.0: February 2015
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0
25
50
75
100
125
150
175
TJ (°C)
Figure 6: VGE(TH) vs. Tj
Page 3 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Cies
VCE=960V
IC=20A
12
9
Capacitance (pF)
VGE(V)
1000
6
3
Coes
100
0
10
Cres
1
0
10
20
30
40
50
60
70
0
5
Qg(nC)
Fig 7: Gate-Charge Characteristics
10
15
20
25
30
35
40
VCE(V)
Fig 8: Capacitance Characteristic
350
300
Power Disspation (W)
250
200
150
100
50
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 10: Power Disspation as a Function of Case
50
Current rating IC(A)
40
30
20
10
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 11: Current De-rating
Rev.2.0: February 2015
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Page 4 of 8
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
10000
Td(off)
Td(off)
Tf
Tf
Switching Time (nS)
Switching Time (nS)
1000
100
10
1000
100
10
1
1
0
10
20
30
40
IC (A)
Figure 12: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=600V,Rg=15Ω)
0
25
50
75
100
125
150
Rg (Ω)
Figure 13: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=600V,IC=20A)
175
10000
Td(off)
Tf
Switching Time (nS)
1000
100
10
1
0
50
100
150
TJ (°C)
Figure 14: Switching Time vs.Tj
( VGE=15V,VCE=600V,IC=20A,Rg=15Ω)
Rev.2.0: February 2015
200
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Page 5 of 8
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
4
Eoff
3
Switching Energy (mJ)
SwitchIng Energy (mJ)
Eoff
2
1
0
3
2
1
0
0
10
20
30
IC (A)
Figure 15: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=600V,Rg=15Ω)
40
0
50
75
100
125
150
175
Rg (Ω)
Figure 16: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=600V,IC=20A)
4
4
Eoff
Eoff
Switching Energ y (mJ)
3
Switching Energy (mJ)
25
2
1
0
3
2
1
0
0
25
50
75
100
125
150
175
TJ (°C)
Figure 17: Switching Loss vs. Tj
(VGE=15V,VCE=600V,IC=20A,Rg=15Ω)
Rev.2.0: February 2015
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200
300
400
500
600
VCE (V)
Figure 18: Switching Loss vs. VCE
(Tj=175°C,VGE=15V,IC=20A,Rg=15Ω)
Page 6 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-02
3
1.E-03
2.5
VCE=1200V
VSD (V)
ICE(S) (A)
1.E-04
1.E-05
2
40A
1.5
20A
1
5A
0.5
IF=1A
1.E-06
VCE=960V
1.E-07
1.E-08
0
50
100
150
0
200
0
Temperature (°C )
Fig 19: Diode Reverse Leakage Current vs.
Junction Temperature
25
50
75
100
125
150
175
Temperature (°C )
Fig 20: Diode Forward voltage vs. Junction
Temperature
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.44°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance for IGBT
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance for Diode
Rev.2.0: February 2015
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Page 7 of 8
Rev.2.0: February 2015
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Page 8 of 8