AOK30B120D2 1200V, 30A Alpha IGBT TM with Diode General Description Product Summary • Latest AlphaIGBT ( IGBT) technology • Low turn-off switching loss due to fast turn-off time • Very smooth turn-off current waveforms reduce EMI • Better thermal management • High surge current capability • Minimal gate spike due to high input capacitance VCE IC (TC=100°C) 1200V 30A VCE(sat) (TC=25°C) 1.77V Applications • Induction Cooking • Rice Cookers • Microwave Ovens • Other soft switching applications Top View C TO-247 G AOK30B120D2 C E E G Orderable Part Number Package Type AOK30B120D2 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE V GE Gate-Emitter Voltage T =25° C C Continuous Collector IC TC=100°C Current Form Minimum Order Quantity Tube 240 AOK30B120D2 1200 Units V ±30 60 V 30 A Pulsed Collector Current, Limited by T Jmax I Cpulse 120 A Non repetitive peak collector currentA Turn off SOA, VCE ≤ 600V, Limited by T Jmax I CSM 200 A I LM 120 A Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by T Jmax TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case 60 IF 30 I Fpulse PD T J , T STG TL Symbol R q JA R q JC R q JC 120 340 170 A A W -55 to 175 °C 300 °C AOK30B120D2 40 0.44 Units °C/W °C/W 1.20 °C/W Note A: Capacitor charging saturation current limited by T jmax<175°C and tp<3ms Rev.1.0: December 2014 www.aosmd.com Page 1 of 8 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 1200 - - V TJ=25°C - 1.77 2.2 V CE(sat) VGE=15V, IC=30A TJ=125°C - 2.2 - TJ=175°C - 2.43 - TJ=25°C - 1.5 1.8 TJ=125°C - 1.6 - TJ=175°C - 1.62 - - 5.2 - TJ=25°C - - 10 TJ=125°C - - 800 TJ=175°C - - 8000 VF Parameter Collector-Emitter Saturation Voltage Diode Forward Voltage VGE=0V, IC=30A V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=1200V, VGE=0V I GES g FS Gate-Emitter leakage current Forward Transconductance V V V mA VCE=0V, VGE=±30V - - ±100 VCE=20V, IC=30A - 28 - nA S - 1900 - pF - 109 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 32 - pF Qg Total Gate Charge - 67 - nC Q ge Gate to Emitter Charge - 16 - nC Q gc Gate to Collector Charge - 32 - nC - 1.85 - W TJ=25°C VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH - 115 - ns - 130 - ns - 1.28 - mJ TJ=175°C VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH - 140 - ns - 200 - ns - 2.15 - mJ VGE=15V, VCE=960V, IC=30A VGE=0V, VCE=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E off Turn-Off Energy SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E off Turn-Off Energy THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: December 2014 www.aosmd.com Page 2 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 200 20V 120 17V 15V 90 13V 15V 11V IC (A) IC (A) 150 20V 13V 17V 100 11V 60 9V 9V 50 30 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 3 4 5 6 7 100 100 VCE=20V -40°C 80 80 60 60 25°C IF (A) IC (A) 2 VCE(V) Fig 2: Output Characteristic (Tj=175°C ) VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 40 40 175°C 20 175°C 20 -40°C 25°C 0 0 4 7 10 13 0.5 16 VGE(V) Fig 3: Transfer Characteristic 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VF (V) Fig 4: Diode Characteristic 8 5 7 4 IC=60A VGE(TH)(V) VCE(sat) (V) 1 3 IC=30A 6 5 2 4 IC=15A 1 3 0 2 0 25 50 75 100 125 150 175 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: December 2014 www.aosmd.com 0 25 50 75 100 125 150 175 TJ (°C) Figure 6: VGE(TH) vs. Tj Page 3 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Cies VCE=960V IC=30A 12 9 Capacitance (pF) VGE(V) 1000 6 3 Coes 100 0 10 Cres 1 0 10 20 30 40 50 60 70 0 5 Qg(nC) Fig 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic 350 300 Power Disspation (W) 250 200 150 100 50 0 25 50 75 100 125 150 175 TCASE(°C) Fig 10: Power Disspation as a Function of Case 60 50 Current rating I C(A) 40 30 20 10 0 25 50 75 100 125 150 175 TCASE(°C) Fig 11: Current De-rating Rev.1.0: December 2014 www.aosmd.com Page 4 of 8 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 10000 Td(off) Td(off) Tf Tf Switching Time (nS) Switching Time (nS) 1000 100 10 1000 100 10 1 1 0 10 20 30 40 IC (A) Figure 12: Switching Time vs. I C (Tj=175°C,VGE=15V,VCE=600V,Rg=10W) 0 25 50 75 100 Rg (W) Figure 13: Switching Time vs. R g (Tj=175°C,VGE=15V,VCE=600V,IC=30A) 125 10000 Td(off) Tf Switching Time (nS) 1000 100 10 1 0 50 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=600V,IC=30A,Rg=10W) Rev.1.0: December 2014 200 www.aosmd.com Page 5 of 8 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 4 Eoff 3 Switching Energy (mJ) SwitchIng Energy (mJ) Eoff 2 1 0 3 2 1 0 0 10 20 30 40 0 IC (A) Figure 15: Switching Loss vs. I C (Tj=175°C,VGE=15V,VCE=600V,Rg=10W) 50 75 100 125 Rg (W) Figure 16: Switching Loss vs. Rg (Tj=175°C,VGE=15V,VCE=600V,IC=30A) 4 4 Eoff Eoff Switching Energ y (mJ) 3 Switching Energy (mJ) 25 2 1 0 3 2 1 0 0 25 50 75 100 125 150 175 TJ (°C) Figure 17: Switching Loss vs. Tj (VGE=15V,VCE=600V,IC=30A,Rg=10W) Rev.1.0: December 2014 www.aosmd.com 200 300 400 500 600 VCE (V) Figure 18: Switching Loss vs. VCE (Tj=175°C,VGE=15V,IC=30A,Rg=10W) Page 6 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-02 3 1.E-03 2.5 1.E-04 2 VCE=1200V VSD (V) ICE(S) (A) 60A 1.E-05 30A 1.5 5A 1.E-06 1 VCE=960V 1.E-07 IF=1A 0.5 1.E-08 0 50 100 150 0 200 0 Temperature (°C ) Fig 19: Diode Reverse Leakage Current vs. Junction Temperature 25 50 75 100 125 150 175 Temperature (°C ) Fig 20: Diode Forward voltage vs. Junction Temperature ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=0.44°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 21: Normalized Maximum Transient Thermal Impedance for IGBT ZqJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=1.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: December 2014 www.aosmd.com Page 7 of 8 Rev.1.0: December 2014 www.aosmd.com Page 8 of 8