AOS Semiconductor Product Reliability Report

AOS Semiconductor
Product Reliability Report
AO4403/AO4403L,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
Nov 1, 2006
1
This AOS product reliability report summarizes the qualification result for AO4403. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AO4403 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
Quality Assurance Information
I. Product Description:
The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in
PWM applications. The source leads are separated to allow a Kelvin connection to the source,
which may be used to bypass the source inductance. Standard Product AO4403 is Pbfree (meets
ROHS & Sony 259 specifications). AO4403L is a Green Product ordering option. AO4403 and
AO4403L are electrically identical.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain
Current
TA=25°C
TA=70°C
Pulsed Drain Current
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage
Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-toAmbient
Maximum Junction-toAmbient
Maximum Junction-to-Lead
-6.1
ID
-5.1
IDM
-30
3
PD
W
2.1
TJ, TSTG
-55 to 150
Symbol
T ≤ 10s
SteadyState
SteadyState
A
RθJA
RθJL
°C
Typ
Max
Units
31
40
°C/W
59
75
°C/W
16
24
°C/W
2
II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond wire
Mold Material
Filler % (Spherical/Flake)
Flammability Rating
Backside Metallization
Moisture Level
AO4403
Standard sub-micron
low voltage P channel process
8 leads SOIC
Copper with silver pad
Ag epoxy
Au 2mils
Epoxy resin with silica filler
90/10
UL-94 V-0
Ti / Ni / Ag
Up to Level 1 *
AO4403L (Green Compound)
Standard sub-micron
low voltage P channel process
8 leads SOIC
Copper with silver pad
Ag epoxy
Au 2 mils
Epoxy resin with silica filler
100/0
UL-94 V-0
Ti / Ni / Ag
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO4403 (Standard) & AO4403L (Green)
Test Item
Test Condition
Time
Point
Lot Attribution
Total
Sample
size
Solder
Reflow
Precondition
Standard: 1hr PCT+3
cycle [email protected]°c
0hr
Standard: 49 lots
Green: 16 lots
9625 pcs
0
HTGB
Temp = 150°c ,
Vgs=100% of Vgsmax
492pcs
0
HTRB
HAST
Pressure Pot
Temperature
Cycle
Number
of
Failures
Green: 168hr 85°c
/85%RH +3 cycle
[email protected]°c
168 / 500
hrs
6 lots
1000 hrs
(Note A*)
168 / 500
hrs
6 lots
1000 hrs
(Note A*)
130 +/- 2°c , 85%RH,
33.3 psi, Vgs = 80% of
Vgs max
100 hrs
Standard: 33 lots
Green: 13 lot
121°c , 29.7psi,
RH=100%
96 hrs
Temp = 150°c ,
Vds=80% of Vdsmax
-65°c to 150°c ,
air to air
250 / 500
cycles
(Note B**)
Standard: 49 lots
Green: 16 lots
(Note B**)
Standard: 49 lots
Green: 15 lots
(Note B**)
77+5 pcs /
lot
492pcs
0
77+5 pcs /
lot
2530pcs
0
50+5 pcs /
lot
3575 pcs
0
50+5 pcs /
lot
3520 pcs
0
50+5 pcs /
lot
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III. Result of Reliability Stress for AO4403 (Standard) & AO4403L (Green)
Continues
DPA
Internal Vision
Cross-section
X-ray
CSAM
Bond Integrity
Room Temp
150°c bake
NA
5
5
5
5
5
5
0
NA
5
5
0
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
150°c bake
Solderability
230°c
5 sec
15
15 leads
0
Die shear
150°c
0hr
10
10
0
Note A: The HTGB and HTRB reliability data presents total of available AO4403 and AO4403L
burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AO4403 and AO4403L
comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 10
MTTF = 11415 years
In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of
lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation
energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability
group also routinely monitors the product reliability up to 1000 hr at and performs the necessary
failure analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AO4403). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)]
= 1.83 x 109 / [2 (4×164) (168) (258) + 2 (164) (500) (258) + 2 (164) (1000) (258)]
= 10
MTTF = 109 / FIT = 1.0 x 108hrs = 11415 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D
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