AOS Semiconductor Product Reliability Report

AOS Semiconductor
Product Reliability Report
AOZ8212CI-05, rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOZ8212CI-05.
Review of the electrical test results confirms that AOZ8212CI-05 passes AOS quality and reliability
requirements.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Qualification Test Result
Reliability Evaluation
I. Product Description:
The AOZ8212CI-05 is a two-line bi-directional transient voltage suppressor diode designed to protect voltage
sensitive electronics from high transient conditions and ESD.
-ROHS compliant
-Halogen free
Detailed information refers to the datasheet on website.
.
II. Package and Die Information:
Product ID
Package Type
Lead Frame
Die attach material
Bonding
MSL level
AOZ8212CI-05
SOT23A
Cu,
Epoxy
Au wire
Up to Level 1
2
III. Qualification Tests Result:
Test Item
Test Condition
Test duration Sample Size
PreConditioning
168hrs @85 °C
/85%RH+3 cyc
[email protected]°C
-
Pass
6 lots (Sum of
TC,PCT and HAST)
JESD22-A113
HTRB
Vdd= 80% Vbr max.
Temp = 150°C
168hrs
500hrs
1000hrs
3 lots
6 lots
Pass
JESD22-A108
Result
Standard
(77 /lot)
Temperature
Cycle
'-65 °C to +150 °C,
air to air
500cycles
6 lots (77 /lot)
Pass
JESD22-A110
Pressure Pot
121°C, 29.7psi,
RH= 100%
96hrs
6 lots (77 /lot)
Pass
JESD22-A102
HAST
'130 +/- 2°C, 85%RH,
33.3 psi, at VCC min
power dissipation.
100hrs
6 lots (55 /lot)
Pass
JESD22-A104
IV. Reliability Evaluation
FIT rate (per billion): 13
MTTF = 8685 years
The presentation of FIT rate for the individual product reliability is restricted by the actual HTRB sample size
of the selected product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion device hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2x (3x77x168+6x77x500) x258] = 13
MTTF = 109 / FIT = 7.61 x107hrs= 8685 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB tests
H = Duration of HTRB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55
70
85
100
115
130
150
deg C
deg C
deg C
deg C
deg C
deg C
deg C
Af
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
3