AOS Semiconductor Product Reliability Report AOD603A, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOD603A. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOD603A passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. -RoHS Compliant -Halogen Free Details refer to the datasheet. II. Die / Package Information: AOD603A Standard sub-micron Low voltage N+P channel process Package Type 4 leads TO252 Lead Frame Cu Die Attach Silver epoxy Bond wire Cu & Au wire Mold Material Epoxy resin with silica filler Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOD603A Test Item Test Condition Time Point MSL Precondition 168hr 85° c /85%RH +3 cycle reflow@260° c Temp = 150° c, Vgs=100% of Vgsmax - 9 lots 168hrs 500 hrs 1000 hrs 3 lots HTGB Lot Attribution (Note A*) HTRB Temp = 150° c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs Pressure Pot Temperature Cycle Number of Failures 0 JESD22A113 231pcs 0 JESD22A108 0 JESD22A108 495pcs 0 JESD22A110 0 JESD22A102 0 JESD22A104 77 pcs / lot 231pcs 77 pcs / lot 130 +/- 2° c, 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121° c , 29.7psi, RH=100% 100 hrs 9 lots 96 hrs (Note A*) 5 lots 55 pcs / lot 275pcs (Note A*) 55 pcs / lot -65° c to 150° c, air to air, 250 / 500 cycles 8 lots (Note A*) Reference Standard 1210pcs 3 lots (Note A*) HAST Total Sample size 440pcs 55 pcs / lot Note A: The reliability data presents the available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 15 MTTF = 7435 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 7 MTTF = 10 / FIT = 6.51 x 10 hrs = 7435 years / [2x (3x2x77) x (500) x (258)] = 15 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C Tuse Af 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3