AOS Semiconductor Product Reliability Report

AOS Semiconductor
Product Reliability Report
AOD603A,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOD603A. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOD603A passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
applications.
-RoHS Compliant
-Halogen Free
Details refer to the datasheet.
II. Die / Package Information:
AOD603A
Standard sub-micron
Low voltage N+P channel process
Package Type
4 leads TO252
Lead Frame
Cu
Die Attach
Silver epoxy
Bond wire
Cu & Au wire
Mold Material
Epoxy resin with silica filler
Moisture Level
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
Process
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III. Result of Reliability Stress for AOD603A
Test Item
Test Condition
Time
Point
MSL
Precondition
168hr 85°
c
/85%RH +3 cycle
[email protected]°
c
Temp = 150°
c,
Vgs=100% of
Vgsmax
-
9 lots
168hrs
500 hrs
1000 hrs
3 lots
HTGB
Lot
Attribution
(Note A*)
HTRB
Temp = 150°
c,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
Pressure Pot
Temperature
Cycle
Number
of
Failures
0
JESD22A113
231pcs
0
JESD22A108
0
JESD22A108
495pcs
0
JESD22A110
0
JESD22A102
0
JESD22A104
77 pcs / lot
231pcs
77 pcs / lot
130 +/- 2°
c,
85%RH,
33.3 psi, Vgs =
100% of Vgs max
121°
c , 29.7psi,
RH=100%
100 hrs
9 lots
96 hrs
(Note A*)
5 lots
55 pcs / lot
275pcs
(Note A*)
55 pcs / lot
-65°
c to 150°
c,
air to air,
250 / 500
cycles
8 lots
(Note A*)
Reference
Standard
1210pcs
3 lots
(Note A*)
HAST
Total
Sample size
440pcs
55 pcs / lot
Note A: The reliability data presents the available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 15
MTTF = 7435 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion device hours.
2
9
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10
9
7
MTTF = 10 / FIT = 6.51 x 10 hrs = 7435 years
/ [2x (3x2x77) x (500) x (258)] = 15
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
Tuse
Af
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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