SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1) Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules (Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5 ► Phase Control Thyristors 1) Top Hat Type 2) Capsules 3) Modules(Isolated base) 7 9 11 ► Fast Turn-off Thyristors 1) Top Hat Type 2) Capsules - Center gate 3) Capsules - Distributed gate 13 13 13 ► Power Stacks 1) Thyristor Stack (B6C) 2) Diode Stacks (B6U) 15 15 ► Special Products 1) H.V.Disks 2) Water Cooled Assemblies 3) Press Fit Diode Stacks ► IGBT Stacks 17 17 17 19 Rectifier Diodes Top Hat Type VRRM ×100 V Type [V] SXHN6 SXHN14 SXHN16 SXHN20 SXBN26 SXHN26 SXHN41 SXHN55 SXBR71 SXHNS100 SXHNS150 SXHBN150 SXHNS201 SXHBN200 SXHNS250 SXHN250 SXHN300 SXHNS320 SXHN350 SXHFN350 SXHN400 SXHFN400 SXHN550 SXHN680 SXHN860 2 - 15 2 - 18 2 - 30 2 - 20 If(av) / Tc [A] 6 12 16 20 25 25 40 55 70 100 150 150 200 200 250 250 300 320 350 350 400 400 550 680 860 [°C] 130 130 130 130 130 130 130 125 125 130 130 130 130 130 130 130 130 125 125 125 125 125 100 90 100 Ifrms [A] 9.5 19 25 32 40 63 86 110 160 200 200 300 300 392 392 471 500 430 430 628 628 865 1070 1350 IFSM 10 mS Tj max I2t 10mS Vpk /Ipk at Tjmax Vo r [A] 200 250 300 350 375 400 500 800 1000 2400 3600 3600 4000 4000 5000 5000 5200 5500 6000 6000 7000 7000 12500 14000 16000 [kA2sec] 0.200 0.312 0.450 0.612 0.703 0.800 1.250 3.200 5.000 28.800 64.800 64.800 80.000 80.000 125.000 125.000 1303.000 151.000 180.000 180.000 245.000 245.000 781.000 980.000 1280.000 [V] [A] 1.30 20 1.50 38 1.55 50 1.50 63 1.45 78 1.25 78 1.25 125 1.35 172 1.35 220 1.30 300 1.25 470 1.25 470 1.30 630 1.30 630 1.30 785 1.30 785 1.20 1000 1.40 1000 1.15 1050 1.15 1050 1.12 1500 1.12 1500 1.65 1500 1.55 2100 1.48 2500 [V] 0.70 0.77 0.82 0.90 0.80 0.80 0.72 0.72 0.77 0.80 0.75 0.75 0.70 0.70 0.75 0.75 0.72 0.77 0.75 0.75 0.75 0.75 0.85 0.80 0.74 [mΩ] 16.50 11.00 8.30 10.00 10.00 4.25 3.60 2.75 2.00 1.22 0.90 0.90 0.60 0.60 0.56 0.56 0.40 0.57 0.36 0.36 0.35 0.35 0.50 0.33 0.20 (j-c) Rth (c-h) [°C/W] 4.500 0.60 2.10 0 0.60 1.50 0 0.25 1.30 0 0.25 1.10 0 0.25 1.000 0.25 0.750 0.25 0.500 0.15 0.400 0.15 0.360 0.05 0.240 0.05 0.240 0.05 0.240 0.05 0.240 0.05 0.180 0.05 0.180 0.05 0.16 0 0.05 0.14 0 0.05 0.140 0.05 0.12 0 0.02 0.120 0.05 0.110 0.02 0.072 0.02 0.070 0.02 0.070 0.20 Tjmax Fig.No [°C] 180 160 180 TD1 TD1 TD1 TD1 TD2 TD3 TD3 TD3 TD3 TD4 TD4 TD5 TD4 TD5 TD7 TD6 TD6 TD7 TD6 TD8 TD6 TD8 TD9 TD9 TD9 * for further details refer individual datasheets @ www.hirect.com TD1 TD3 TD2 10.0 Ø2 Ø16 4 Ø8.2 Ø5.5 N R R N 135 ±10 17 A/F M6x1 P. ROLLED THREAD 1 N 45 ±5 11 A/F 11.0 11 11 A/F M6x1 P. ROLLED THREAD N R 158 ±10 R 45 ± 5 N 21 N 11 R R M8 X 1.25P ROLLED THREAD Rectifier Diodes 19 TD5 10 19 R 10.5 N N R R N 177±5 185±5 N 65 65 R 10 Ø10 10.5 10 TD4 21 27 A/F Ø38 Ø40 M16x1.5P ROLLED THREAD TD6 TD7 R 22 Ø1 11 .5 0.5 N R R N 240 ±5 N N 85.5 80 ±5 240±5 R Ø10 11 1.1 1.1 22 20 ±0.5 32 A/F Ø38 Ø40 M20x1.5P ROLLED THREAD TD8 TD9 26 Ø11 14 22 18 11 11 Ø11 R N N 25 121± 5 90 ±5 245 ±5 R 260 ±10 R HFN N 8.6 X 04 HOLES Ø11 46SQ 60SQ 27 9.5x4 HOLES 46SQ 61SQ 2 Rectifier Diodes Capsules Type SHXC450 SHXC540 SHXC760 SHXC1130 SHXC1850 SHXC2230 SHXXC2300 SHXXC2500 SHXXC6400 VRRM ×100 V If(av) / Tc Ifrms IFSM 10 mS Tj max [V] [A] [°C] [A] [A] 2 - 18 2-6 2 - 18 2-6 2 - 44 2 - 26 2-6 450 540 760 1130 1850 2230 2300 2500 6400 95 700 91 850 104 1200 65 1775 63 2900 109 3500 71 3600 90 3925 85 10048 4900 6000 8500 11000 20500 25000 26000 26000 55000 I2t [kA2sec] 120 180 361 605 2100 3125 3380 3380 15125 Vpk /Ipk at Tjmax Vo r [V] [A] [V] [mΩ] 1.52 1.85 1.39 1.83 1.44 1.10 1.70 1.30 0.88 1500 1600 2000 3000 3000 3000 3000 3000 4500 0.70 0.75 0.70 0.78 0.74 0.70 0.88 0.87 0.70 0.700 0.650 0.300 0.350 0.200 0.100 0.245 0.127 0.040 (j-c) Rth (c-h) [°C/W] 0.112 0 0.0900 0.0790 0.0450 0.0380 0.0255 0.0170 0.0220 0.0170 0.015 0.015 0.015 0.015 0.005 0.005 0.005 0.004 0.005 Tjmax Fig No [°C] 160 150 190 CD1 CD1 CD1 CD2 CD3 CD3 CD4 CD5 CD6 Tjmax Fig No 170 180 160 180 Fast Recovery Diode Type HD368SXX VRRM ×100 If(av) / Tc Ifrms IFSM 10 mS Tj max [V] 2 - 14 [A] [ 0C] 368 100 [A] 730 [A] 5200 I2t Vpk /Ipk at Tjmax [kA2sec] [V] [A] 2.25 1400 135.20 * for further details refer individual datasheets @ www.hirect.com 3 Vo r [V] [mΩ] 0.80 1.00 0 Rth (j-c) (c-h) [°C/W] 0.015 0.08 [°C] 150 CD1 Rectifier Diodes CD2 Ø3.6x19=2HOLES ANODE Ø3.6x19=2HOLES 0.8 K 1.3 Ø42 Ø25 14.15-15.1 CATHODE 0.8 Ø42 Ø19 0.8 CATHODE 13.1/14.1 CD1 K ANODE A A 25° 20° CD4 CD3 Ø74 Ø 47 25.9/27.7 CATHODE 26±1 CATHODE Ø58.5 Ø34 K ANODE Ø3.6x19=2 HOLES K A 3.6X3 DEPTH 2 HOLES ANODE A 20° CD6 Ø77 Ø48 ANODE Ø60 Ø56 Ø44 26±4 CATHODE 8±1 CD5 CATHODE ANODE Ø3.5x1.5DEPTH Ø3.5x 2DEPTH K K A A 4 Diode Modules Diode- Diode Modules - Isolated base Type VRRM ×100 [V] HDD25N HDD56N HDD95N HDD100N HDD170N HDD250N HDD350N 2 - 18 If(av) / Tc [A] [°C] 25 100 55 100 95 100 100 100 170 100 250 100 350 100 Ifrms Ifrms 2 10ms @ Tjmax It [kA2sec] 1.25 9.80 21.00 31.25 157.00 344.00 605.00 [A] [k A] 40 0.50 85 1.15 150 2.10 165 2.50 270 5.60 395 8.30 550 11.00 Vpk / Ipk at 25°C Vo [V] [A] 80 175 300 325 535 785 1100 0.85 0.85 0.91 0.80 0.77 0.70 0.75 1.40 1.40 1.45 1.30 1.25 1.40 1.45 r [mΩ] [V] 6.00 4.00 1.86 1.50 0.80 0.68 0.40 Rth(J-C) /chip Rth(C-H) /module Tjmax [°C/W] [°C/W] 0.10 0.10 0.10 0.10 0.03 0.02 0.02 [°C] 1.00 0.50 0.39 0.39 0.26 0.17 0.13 Fig No 150 DD1 DD1 DD1 DD1 DD2 DD3 DD3 Fig No Single Phase bridges (Isolated base) Type MB35 HB62 HB82 VRRM ×100 IDC/Tc Ifrms 10ms Tjmax [V] [A] [°C] [A] 2 - 12 30 67 50 85 80 85 550 750 Vo r Rth(J-C) /Diode Rth(C-H) /bridge Tjmax [V] [mΩ] [°C/W] [°C/W] [°C] 0.8 8 8 6 5.40 1.93 1.60 1.350 0.310 0.483 150 DB1 DB3 DB3 Vpk /Ipk at 25°C Vo r Rth(J-C) /Diode Rth(C-H) /bridge Tjmax Fig No [V] [V] [mΩ] [°C/W] [°C/W] [°C] 0.8 7.5 8.0 5.0 3.0 8.40 1.87 1.52 0.83 1.400 0.310 0.253 0.140 150 150 150 150 It 2 Vpk /Ipk at 25°C [kA2sec] 1.25 9.80 2.80 [V] [A] 1.30 50 1.50 75 1.50 125 2 Three phse bridge (Isolated base) Type HD35 HD62 HD82 HD162 VRRM ×100 IDC/Tc Ifsm 10ms Tjmax [V] [A] [°C] [A] 2 - 12 35 62 63 100 82 100 160 100 550 550 750 1800 It [kA2sec] 1.50 1.52 2.18 16.20 [A] 1.7 1 .50 1 .30 1.55 * for further details refer individual datasheets @ www.hirect.com 5 75 75 185 DB2 DB3 DB3 DB4 Diode Modules DD1 DD2 M6 PHILIPS SCREW 3 NOS. 5 30 30 M5 X 10 PHILIPS SCREW 3 NOS. Ø 6.5x2 HOLES TE-5115 24 34 2 20 1 34 Ø 6.5 X2 HOLES 3 20 26 23 23 80 24 80 92 94 DB1 DD3 DB2 6.3 0.8 22 10 51.5 7.5 30 48 6.3 0.8 22 M8X3 NOS. 10 20 Ø 5.2 Ø 5.2 80 ~ 35 92.5 41 118 DB3 - ~ ~ + + 24.2 24.2 28.5 28.5 30 37 DB4 ~ + ~ - 23 60 72 27 42 ~ 20 21.6 20 ~ 27 ~ + ~ - 21.6 13 ~ 28.5 24.2 16 3 2 38 50 22.5 1 ~ 28.5 242 16 - 25 80 94 6 Phase Control Thyristors Top Hat Type Type VDRM / VRRM ×100 IT(av)/Tc Itrms Vpk / Ipk at Tjmax [V] [A] [°C] [A] [V] [A] 2.05 1.72 1.72 1.82 1.87 1.75 2.00 1.80 1.76 1.75 1.70 1.65 1.65 1.45 1.60 1.35 53 100 150 175 200 265 400 470 550 785 1000 1000 1100 1260 1570 2000 H16TL/TB H30TL/TB H45TB H55TB H65TB H85TB H125TB H150TB H175TB H250TB H285TB H300TB H350TB H400TB H500TB H650TB 16 30 45 55 65 85 125 150 175 250 285 300 350 400 500 650 2 - 15 2 - 16 2 - 15 2 - 16 2 - 16 2 - 18 2 - 60 2 - 16 2 - 60 85 85 85 75 75 85 70 70 85 78 82 85 85 85 75 70 25 50 70 85 100 135 195 235 275 392 450 470 550 628 785 1020 Itsm 10m Tjmax Vo [kA2sec] [kA] [V] [mΩ] [°C/W] 0.61 1.25 3.20 4.05 5.00 13.60 31.00 45 .00 106 .00 106 .00 211.00 281.00 320 .00 500 .00 720 .00 980 .00 0.35 0.50 0.80 0.90 1.00 1.65 2.50 3.00 4.60 4.60 6.50 7.50 8 .00 10.00 12.00 14.00 1.10 0.95 0.95 0.90 0.87 1.20 1.20 0.90 1.08 0.92 0.80 1.04 0.80 0.90 0.90 1.00 16.00 6.40 4.50 4.35 4.10 2.60 1.90 1.80 1.30 0.99 0.75 0.61 0.50 0.40 0.35 0.12 1.400 0.300 0.930 0.300 2 It r (j-c) Rth (c-h) Tjmax [°C] 0.600 0.200 0.500 0.270 0.245 0.234 0.135 0.120 0.113 0.200 0.080 0.080 0.080 0.040 0.040 0.050 125 0.080 0.02 0 0.076 0.015 0.070 0.015 * for further details refer induvidual datasheets @ www.hirect.com TH1B TH1A 6.5 Ø12 Ø 4 Ø7 3 Ø 6.3 G K 160 ±5 K 180 ±5 30 Ø4 A 14 A/F 11 11 A 14 A/F 1/4"-28unf rolled thread TH3 170± 5 K 190±5 G Ø8 Ø 8.3 G K A 16 .5 Ø8 55 A Ø4 165±5 Ø16 Ø7 Ø4 175 ±5 TH2 1/4"-28unf rolled thread 10 G 1/4” unf 7 27 A/F 21 11 TE-5585 17 A/F Fig No ½”,20UNF TH1-A/B TH1-A/B TH2 TH2 TH2 TH3 TH4 TH5 TH6 TH6 TH6 TH7 TH7 TH8 TH8 TH9 Phase Control Thyristors .5 TH5 G 19 MAX Ø4 Ø8 0 Ø1 177±5 100±5 K 180±5 K 175±5 G 10 10 10 0 Ø1 Ø4 10 +0 19 Ø8 165±5 TH4 A 55 A 27 A/F 21 21 27 A/F 1/2",20 UNF,2A THREADS 1/2", 20 UNF TH6 Ø8 Ø4 TH7 22 Ø11 11 Ø8 190±5 Ø4 1 Ø1 11 22 G A K 260 ±5 K 232 ±5 G 21 165 ±5 80 ±5 A TH8 TH9 Ø4 Ø4 Ø8 18 268 ±5 G 125 ±5 232 ±5 A 46 SQ 60 SQ Ø 8.5x4 HOLES K 260 ±10 K A 135± 5 Ø8 27 Ø13.5 1 Ø1 14 26 G 46SQ 60 max.sq. Ø 8.4 X 4 HOLES 3/4" UNF 13 13 33 A/F 46 SQ 60 SQ fTechnic|b0|i0|c2|p2;20° 8 Phase Control Thyristors Capsules Type H445CH H507CH H955CH H1450CH H1500CH H1590CH H1800CH H2000CH H2900CH H3200CH H4350CH VDRM / VRRM IT(av)/Tc [V] [A] [°C] 2 - 16 2 - 14 2 - 16 2 - 28 2 - 18 2 - 60 2 - 20 2 - 18 2 - 25 2 - 20 2 - 14 445 507 955 1450 1500 1590 1800 2000 2900 3200 4350 69 85 64 82 63 65 54 73 78 68 85 Itrms [A] 700 1500 2280 2355 2500 2830 3140 4550 5000 6829 Vpk /Ipk at Tjmax [V] [A] 2.07 1200 1.92 1600 2.00 3000 1.55 1.37 1.68 1.45 1.42 1.30 1.18 3000 3000 3000 3000 3000 3000 4000 I2t Vo r Tjmax [kA2sec] 106 320 781 4500 2420 2000 2880 6480 7683 12701 18000 * for further details refer induvidual datasheets @ www.hirect.com 9 Itsm 10mS (j-c) Rth (c-h) [kA] [V] [mΩ] [°C/W] 4.60 8.00 12.50 30.00 22.00 20.00 24.00 36.00 39.20 50.40 60.00 0.85 0.80 0.85 0.97 0.84 1.00 1.05 0.82 0.85 0.95 0.88 0.900 0.600 0.350 0.270 0.195 0.100 0.185 0.180 0.175 0.127 0.075 0.0680 0.015 0.0530 0.015 0.0380 0.005 0.0150 0.005 0.0265 0.005 0.0330 0.005 0.0210 0.005 0.0150 0.005 0.0090 0.002 0.0090 0.002 0.0095 0.002 Tjmax Fig No [°C] 125 140 125 CH1 CH2 CH3 CH4 CH4 CH3 CH4 CH4 CH5 CH5 CH6 Phase Control Thyristors CH2 25 G Ø3.6x19=2HOLES 0.8 ANODE 1.3 Ø42 0.8 25 CATHODE GATE GATE 14±0.5 Ø42 0.8 CATHODE 13.1/14.1 CH1 ANODE K G A Ø3.6x19=2HOLES K A 20° 20° CH4 CH3 CATHODE Ø74 Ø47 GATE GATE 0.8 26±1 27±0.5 0.8 CATHODE Ø58.5 Ø34 ANODE G Ø3.6x3=2 HOLES Ø3.6x19=2 HOLES ANODE K G CATHODE 20° CH5 A 20° A K CH6 CATHODE Ø101 Ø73 Ø119 GATE GATE 0.8 35±2 26±1 0.8 Ø80 ANODE ANODE K G A K 20° A 20° G 10 Thyristors Modules Modules (Isolated Base) Type VDRM / VRRM ×100 IT(av) / Tc Itrms [V] [A] [°C] [A] 40 65 85 120 140 180 205 255 265 395 HTT/HTD25N HTT/HTD40N HTT/HTD55N HTT/HTD76N HTT/HTD90N HTT/HTD116N HTT/HTD132N HTT/HTD162N HTT/HTD170N HTT/HTD250N 25 40 55 75 90 116 130 162 170 250 2 - 18 85 85 85 85 85 85 85 85 85 85 Vpk /Ipk at Tjmax [V] 1.80 1.80 1.60 1.60 1.60 1.75 1.50 1.50 1.54 1.55 I 2t [A] [kA2sec] 80 1.06 2.45 125 7.81 175 235 10.51 300 14.45 300 24.00 410 51.20 500 96.80 550 106.00 800 245.00 Itsm 10m @T jmax Vo [kA] 0.46 0.70 1.25 1.45 1.70 2.20 3.20 4.40 4.60 7.00 [V] 1.00 0.88 0.90 0.82 0.84 0.80 0.85 0.85 0.95 0.80 Itsm 10mS Tjmax IGT VGT Rth(J-C) Rth(C-H) /chip /module r [mΩ] [°C/W] [°C/W] 11.00 0.92 0.10 5.80 0.69 0.10 3.50 0.55 0.10 2.60 0.39 0.10 2.10 0.38 0.10 0.10 2.40 0.22 1.50 0.23 0.03 0.95 0.20 0.03 1.00 0.17 0.02 0.70 0.13 0.02 Tjmax Fig No [°C] TT1 TT1 TT1 TT1 TT1 TT1 TT2 TT2 TT3 TT3 125 130 125 3 Thyristor Modules (Non-Isolated Base) Type VDRM / VRRM ×100 IT(av) / Tc Itrms [V] [A] [°C] [A] 2-4 80 116 130 112 200 121 125 204 314 H3T80N H3T130N H3T200N Vpk /Ipk I2t 0 at 25 C [V] [A] 1.20 240 1.20 410 1.20 630 [kA2sec] 26 51 145 Rth(J-C) Rth(C-H) /chip /module [KA] [mA] [ V] 2.28 3.20 5.40 150 2.00 Itsm 10mS Tjmax Vo r Rth(J-C) Rth(C-H) /chip /module [°C/W] [°C/W] [°C/W] [°C/W] 0.35 0.03 0.03 0.20 0.12 0.03 Tjmax Fig No [°C] TT4 TT4 TT5 Single Phase Half Controlled Bridge Type VDRM / VRRM ×100 IT(av) / Tc Itrms Vpk /Ipk at Tjmax [V] [A] [°C] [A] [V] 40 28 1.45 45 HCH40 8 - 12 85 I2t [A] [kA2sec] 0.5 [kA] [V] [mΩ] 320 0.85 13.00 1.15 0.20 Tjmax Fig No [°C] 125 TT6 High Voltage modules (Isolated Base) Type HTT70N HTT100N HTT165N VDRM / VRRM ×100 IT(av) / Tc Itrms [V] [A] [°C] [A] 2 - 24 70 85 100 85 165 85 110 157 259 2 - 22 Vpk /Ipk 0 at 25 C [V] [A] 1.65 320 1.74 300 1.36 300 I2t at 450C Itsm 10mS Tjmax [kA2sec] [KA] 13.50 14.45 180.00 1.60 1.70 6.00 * Pressure contact devices available on request * for further details refer induvidual datasheets @ www.hirect.com 11 Rth(C-H) T /module jmax VO r Rth(J-C) /chip [A] 0.85 0.85 0.80 [mΩ] [°C/W] [°C/W] [°C] 3.20 3.20 1.60 0.30 0 0.22 0 0.155 0.10 0.03 0.03 125 Fig No TT1 TT1 TT2 Thyristor Modules TT2 M6 PHILLIPS SCREW 3 NOS. 5 30 M5 PHILLIPS SCREW 3 NOS. Ø6.5x2 HOLES Ø 5.7x2 HOLES 2 20 1 3 14 20 30 TT1 K2 G2 G2 K2 K1 G1 20 26 23 80 K1 G1 23 24 80 94 92 TT3 TT4 M5 PHILLIPS SCREW 3 NOS. 36 7.7 48.5 60 35 10 Ø 6.5x2 HOLES 2 3 34 K3 G3 K1 G1 23 17 80 92.5 23 7 6 38 50 11 10 1 2 G1 K1 G2 K2 K 5 8 5 3 K2 G2 1 5 4 115 17 94 12.4 12.4 25 14.35 17 Ø5x2 holes K1 1 2 7 G2 G1 6 8 32 TT6 Ø5 TT5 5 3 K2 4 48.5 63.4 12 Fast Turn-off Thyristors Top Hat Type Type HF80TB HF120TB HF196TB ITsm VDRM / VRRM ×100 IT(av) / Tc [V] [A] [°C] [kA] 2 - 12 80 85 120 85 195 85 2.45 2.90 6.00 Vpk /Ipk at Tjmax IGT /VGT TJ =125°C. Tq Reapplied dv/dt Tjmax [mA] [V] [μSec] [V/MSec] [°C] 20-25 D,F,H D,F D,F 125 TH10 TH11 TH12 IIGT/VGT GT/ VGT TTj=125°C =125°C. J Tq Reapplied dv/dt Tjmax Fig No [mA] [V] [μSec] [V/MSec] [°C] 2.2 800 2.3 1400 250 / 2.5 250 / 2.5 20-25 D,F 125 FH1 FH2 Vpk /Ipk at Tjmax I IGT/ /VVGT TJ =125°C. Tq Reapplied dv/dt Tjmax Fig No [μSec] 20-25 40-55 60-80 [V/MSec] 500 500 1000 [°C] I2t 10mS Tjmax [kA2sec] 30 42 180 2.40 400 2.20 500 2.05 800 I2t A sec Vpk /Ipk at Tjmax [V] [A] 150 / 2.5 250 / 2.5 Fig No Capsules (Center gate type) ITsm IT(av) / Tc 10mSec Tjmax VDRM / VRRM ×100 Type HF188CH HF408CH [V] [A] [°C] [kA] 2 - 12 188 85 408 85 2.90 6.40 2 [kA2sec] 42 205 [V] [A] Capsules (Distributed gate type) VDRM / VRRM ×100 Type HS800CH HS1250CH HS2550CH [V] 15 16-20 IT(av)/Tc ITsm 10mSec Tjmax [A] [°C] 800 55 1250 55 2500 55 [kA] 10.00 14.00 37.20 I2t [V] [A] [kA2sec] 2.30 1600 500 2.00 2000 980 6920 2.15 4000 [mA] [V] 250 / 3.0 300 / 3.0 125 FH3 FH4 FH5 * for further details refer induvidual datasheets @ www.hirect.com Ø8 Ø10 Ø4 22 Ø11 Ø7 10 A A 13 80±5 21 21 1/2", 20 unf, 2a threads 33 A/F 3/4" UNF 255±10 K 110±10 G 44 A/F 27 A/F Ø11 255±10 K 110±10 A G 22 N 190±5 K 177±5 G 180±5 R Ø4 27 19 Ø8 TH12 10 Ø4 TH11 11 11 TH10 3/4" UNF(2A) Fast Turn-off Thyristors FH2 FH1 Ø42 GATE 1.3 ANODE K G A Ø3.6x19=2HOLES K 0.8 0.8 14±0.5 Ø25.15 0.8 Ø3.6x19=2HOLES ANODE A 25° 20° FH4 FH3 CATHODE CATHODE GATE Ø75 Ø50 GATE 26±1 2 2 Ø65 Ø42 26±1 G CATHODE GATE Ø42 Ø19 13.1/14.1 CATHODE 2 Ø3.5x3.5,2 NOS. K G GATE Ø119 Ø80 2 CATHODE Ø3.5x4,2 HOLES 35±2 FH5 20° A 20° A K 2 ANODE G K A 20° G ANODE Ø3.5x3.5,2NOS. 2 ANODE 14 Power Stacks Thyristor Stack (B6C) Sr I/P Device type No Voltage 1 2 3 4 5 6 7 8 9 10 11 12 13 H445CH16 450V H505CH16 450V 500V H509CH18 H955CH16 450V H1800CH18 500V H2000CH18 500V H1800CH18 500V H2000CH18 500V H3200CH20 550V H2900CH25 700V H1450CH28 750V H1450CH28 750V H1663CH36 1000V Class - I Class - II 100% cont. 800A 860A 1010A 1375A 1675A 2090A 2350A 2990A 3675A 3550A 1740A 2475A 2350A Class - IV Class - V 150% for 125% for 2 hrs 150% for 2 hrs 1 minute 200% for 10 secs 200% for 1 Min 560A 440A 410A 475A 450A 600A 525A 710A 575A 975A 800A 725A 1225A 1025A 900A 1540A 1325A 1125A 1740A 1360A 1275A 2225A 1770A 1625A 2850A 2325A 2050A 2375A 2225A 1975A 925A 1275A 1100A 1850A 1470A 1350A 1450A 1400A 1275A Class - VI 150% for 2 Hrs 300% for 1 Mn 280A 340A 360A 500A 640A 800A 910A 1175A 1525A 1475A 670A 975A 925A Arm Fuse (For Class II) Fuse Type 170M3269 400A /690V 170M3270 450A/690V 170M3271 500A/690V 700A/690V 170M4267 170M5265 900A/690V 1100A/690V 170M5267 1250A/690V 170M5268 170M6269 1600A/690V 170M7082 2000A/690V 2X170M6247 2X900A/1250V 170M6247 900A/1250V 170M6251 1400A/1100V 170M6723 1000A/1500V Diode Stack (B6U) I/P Sr Device type No Voltage 1 2 3 4 SH16C540 SH18C1130 SH18C1850 SH18C2500 415Vac 415Vac 415Vac 660Vac Class - I Class - II 100% cont. 1200A 1800A 2500A 3000A 150% for 1 minute 800A 1200A 1800A 2000A Arm Fuse (For Class II) Fuse Type 170M3272 170M5265 170M5268 170M6251 Recommanded Fuse Rating 550A/690V 900A/690V 1250A/690V 1400A/1100V Panel size in mm (w x d x h) 800 X 800 X 2200 800 X 800 X 2200 800 X 800 X 2200 800 X 800 X 2200 NOTE: - Current Ratings are valid for Forced cooling of 5 m/sec air outlet and ambient temp of 450C 15 Recommanded Fuse Rating Panel size in mm (w x d x h) 800 x 800 x 2200 800 x 800 x 2200 800 x 800 x 2200 800 x 800 x 2200 800 x 800 x 2200 800 x 800 x 2200 1000 x 800 x 2200 1000 x 800 x 2200 1000 x 800 x 2200 1000 x 800 x 2200 800 x 800 x 2200 1000 x 800 x 2200 1000 x 800 x 2200 Power Stacks PS1 Canopy 1065 S/C Fuses ~r + ~y ~b 1000 16 Special Products SP1 High Voltage Disks Type Current [A] 0.65 A Ø40 FEMALE TERMINAL M8 THREADS. Fig No 26 NOS. DIODE ANODE SP1 8 9 HVD19K/0.65 Voltage [V] 19K CATHODE MALE TERMINAL M8 SCREW 2 X H505 2 X H604 2 X H955 2 X H1500 2 X H2000 VDRM / VDRM [V] 1600 1600 1600 1600 1600 IRMS / TWATER 0 [A / C] 625 / 40 880 / 40 1120 / 40 1500 / 40 1810 / 40 ITSM Weight Sine wave 10 ms [kA] 5.6 6.5 12.5 24.6 36.0 [g] 2540 2600 3000 8500 8500 Fig No W1 W2 W3 Water Flow Rate - 4.5L /min Max Water Pressure - 10 Bar NOTE: - dv/dt - 1000V/μSec available on request 3 Phase Press Fit Diode Stack For Welding Application Type PTS 240 PTS 400 PTS 600 In VOUT Ed [A] [V] [/] 240 400 600 100 100 100 60 60 60 Air Speed [M/s] 4 4 4 VRRM [V] 400 400 400 Current rating other than the above are available on request 17 Ø22 Thyristors 19A/F Water cooled Assemblies Ø90 Special Products W1 K W2 A 110±1 52±1 A K 162 51 K A 95±2 K 130±1 63 A 59 27±2 51 59±1 38.5±2 162±2 W3 18 IGBT Sacks HIRECT now offer reliable and highest quality IGBT based SAFEStacks and assemblies with best thermal management. This will help optimize system costs and shorten the time to manufacture final equipment. SAFE Stack is a complete switch assembly for power electronic circuits. It contains all components necessary for current, voltage and temperature feedback. The 62mm Infineon make IGBT modules are used along with the superior and most reliable Eice Driver, which provides quality and reliability to SAFEStacks. HIRECT CAN NOW CONTRIBUTE TO YOUR SUCCESS BY 1. Shortening production time due to ready to use power section. 2. Reduce system cost. 3. Modular designs offer flexible systems for power solutions 4. Suitable for industrial standard design cabinets. 5. Optimised thermal designs. 6. Can be readily paralleled for easy expansions. 7. Low inductance IGBT Stack designs. 8. Various power electronic designs can be offered. USEFUL IN APPLICATIONS 1. Drives and Elevators 2. Renewable Energy and Distributed Power Generation Systems 3. Un-interrupted Power Supplies (UPS) 4. Traction Drives 5. Medical Equipments 6. Energy Treatment and HVDC conversion 7. Electrolysis and Electroplating 8. Pulsed Power AVAILABLE IN RATINGS 1000AMPS TO 1600AMPS AND WITH IGBTs OF 600, 1200 AND 1700 VOLTS. By this technology tie-up, world class technology product is now locally available for manufacturers of heavy duty drives, distributed power generators & industrial application in the form of HIRECT make SAFEStacks & assemblies. 19 This Design guide is intended to give a survey of our current Products line of power semiconductors together with their typical characteristics. Detailed characteristics can be found in data sheets of each type available on request from us. Hind Rectifiers Ltd Lake Road, Bhandup (W),Mumbai - 400 078 Tel: +91-22-25968027 / 28 / 29 / 31 / 25962432 Fax: +91-22-25964114 / 4352 Website : www.hirect.com E-mail : [email protected] Nashik Plant Plot No.110/111M.I.D.C. Satpur,Nashik - 422 007 Dehradun Plant New Khasra No. 64 - 67& 74, Village Charba, Langa Road, Vikas Nagar, Dehradun - 248197 EASTERN REGION KOLKATA 1st Main Street, 10,Chatterjee Intl. Centre, 33A, Jawaharlal Nehru Rd. Kolkata- 700 071 Tel: +91-33-22267546,4443 Fax: +91-33-22497532 Email: [email protected] NORTHERN REGION DELHI 62,Dayanand Road, Daryaganj New Delhi-110 002 Tel: +91-11-23275571 / 7026 Fax: +91-11-23282586 Email: [email protected] SOUTHERN REGION CHENNAI Anna Mansion, 1st Floor No.7/1 Avenue Road, Nungambakkam, Chennai- 600 034 Tel: +91-44-28241797,28221271 Fax: +91-44-28241796 Email: [email protected] WESTERN REGION MUMBAI Lake Road, Bhandup (W), Mumbai - 400 078 Tel: +91-22-25968027 / 28 / 29 / 31 Fax: +91-22-25964114 / 4352 E-mail : [email protected] BANGALORE No.199, 1st Floor HVR Layout, Magadi Road (Near KHB Bus Stop) Bangalore - +91-80-560 079 Telefax : - +91-80-23484615 Email: [email protected] SECUNDARABAD 6-103/50, Padmarao Nagar, Secundarabad- 500025 Tel: +91-40-27506239 Fax: +91-40-27505016 Email:[email protected] In the Interest of product improvement Hirect reserves the Right to change the specification without Notice Issue No. 1 September - 08