DG444, DG445 Vishay Siliconix Quad SPST CMOS Analog Switches • Audio switching FEATURES • Low on-resistance: 50 • Battery powered systems • Low leakage: 80 pA • Data acquisition • Low power consumption: 22 nW • Sample-and-hold circuits • Fast switching action - tON: 120 ns • Telecommunication systems • Low charge injection • Automatic test equipment • DG211, DG212 upgrades • Single supply circuits • TTL/CMOS logic compatible APPLICATIONS • Hard disk drives BENEFITS • Low signal errors and distortion DESCRIPTION • Reduced power supply requirements The DG444, DG445 monolithic quad analog switches are designed to provide high speed, low error switching of analog signals. The DG444 has a normally closed function. The DG445 has a normally open function. Combining low power (22 nW, typ) with high speed (tON: 120 ns, typ.), the DG444, DG445 are ideally suited for upgrading DG211, DG212 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. • Faster throughput • Improved reliability • Reduced pedestal errors • Simple interfacing To achieve high-voltage ratings and superior switching performance, the DG444, DG445 are built on Vishay Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 VL S4 6 11 S3 DG444 TRUTH TABLE Logic DG444 DG445 0 On Off 1 Off On Logic "0" 0.8 V Logic "1" 2.4 V ORDERING INFORMATION D4 7 10 D3 IN4 8 9 IN3 Temp. Range Package 16-pin plastic DIP - 40 °C to 85 °C 16-pin narrow SOIC Part Number DG444DJ DG445DJ DG444DY DG445DY Top View Document Number: 70054 S11-0984-Rev. G, 23-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit V+ to VGND to V- 25 V (GND - 0.3) to (V+) + 0.3 VL (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first Digital Inputsa, VS, VD Continuous Current (Any Terminal) 30 Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle ) 100 Storage Temperature Power Dissipation (Package)b Unit 44 mA - 65 to 125 16-Pin Plastic DIPc 450 16-Pin Narrow Body SOICd 640 °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/°C above 75°C. d. Derate 8 mW/°C above 75°C. SPECIFICATIONS for Dual Supplies Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Symbol Analog Signal Ranged Drain-Source On-Resistance VANALOG RDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) D Suffix - 40 °C °C to 85 °C VL = 5 V, VIN = 2.4 V, 0.8 Ve Temp.a Min.b Full - 15 IS = - 10 mA, VD = ± 8.5 V V+ = 13.5 V V- = - 13.5 V Room Full Room Full Room Full Room Full - 0.5 -5 - 0.5 -5 - 0.5 - 10 Full - 500 - 0.01 500 Full - 500 0.01 500 V+ = 16.5, V- = - 16.5 V VD = ± 15.5 V, VS = ± 15.5 V V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V Typ.c Max.b Unit 15 V 50 85 100 0.5 5 0.5 5 0.5 10 ± 0.01 ± 0.01 ± 0.08 nA Digital Control Input Current VIN Low IIL Input Current VIN High IIH VIN under test = 0.8 V All Other = 2.4 V VIN under test = 2.4 V All Other = 0.8 V nA Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injectione tON tOFF Q Off Isolatione OIRR Crosstalk (Channel-to-Channel) d Source Off Capacitance XTALK CS(off) Drain Off Capacitance CD(off) Channel On Capacitance CD(on) www.vishay.com 2 RL = 1 k, CL = 35 pF VS = ± 10 V, See Figure 2 Room 120 250 DG444 Room 110 140 DG445 Room 160 210 Room -1 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 RL = 50 , CL = 5 pF, f =1 MHz f = 1 MHz VANALOG = 0 V Room 60 Room 100 Room 4 Room 4 Room 16 ns pC dB pF Document Number: 70054 S11-0984-Rev. G, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 Vishay Siliconix SPECIFICATIONS for Dual Supplies Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Power Supplies Symbol Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL Ground Current VL = 5 V, VIN = 2.4 V, 0.8 Ve D Suffix - 40 °C °C to 85 °C Temp.a Min.b Room Full V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V Room Full Room Full Room Full IGND -1 -5 Typ.c Max.b 0.001 1 5 - 0.0001 0.001 -1 -5 Unit 1 5 µA - 0.001 SPECIFICATIONS for Unipolar Supplies Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V Parameter Analog Switch Symbol Analog Signal Ranged Drain-Source VANALOG On-Resistanced Dynamic Characteristics RDS(on) Limits - 40 °C °C to 85 °C VL = 5 V, VIN = 2.4 V, 0.8 Ve Temp.a Min.b Full 0 IS = - 10 mA, VD = 3 V, 8 V V+ = 10.8 V, VL = 5.25 V Typ.c Max.b Unit 12 V Room Full 100 160 200 Turn-On Time tON 300 450 tOFF RL = 1 k, CL = 35 pF, VS = 8 V See Figure 2 Room Turn-Off Time Room 60 200 Q CL = 1 nF, Vgen = 6 V, Rgen = 0 Room 2 Positive Supply Current I+ V+ = 13.2 V, VIN = 0 or 5 V 0.001 Negative Supply Current I- VIN = 0 or 5 V -1 -5 Logic Supply Current IL VL = 5.25 V, VIN = 0 or 5 V Room Full Room Full Room Full IGND VIN = 0 or 5 V Full -1 -5 Charge Injection ns pC Power Supplies Ground Current 1 5 - 0.0001 0.001 1 5 µA - 0.001 Notes: a. Room = 25 °C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70054 S11-0984-Rev. G, 23-May-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) - 140 V+ = 15 V V- = - 15 V 70 - 120 Crosstalk 60 - 100 50 85 °C 40 (dB) R DS(on) - Drain-Source On-Resistance () 80 25 °C - 80 - 60 30 Off Isolation 20 - 40 - 40 °C 0 °C V+ = 15 V V- = - 15 V Ref. 10 dBm - 20 10 0 0 - 15 - 10 -5 0 5 10 15 100 1K 10K 100K 1M 10M VD - Drain Voltage (V) f - Frequency (Hz) RDS(on) vs. VD and Temperature Crosstak and Off Isolation vs. Frequency 50 40 CL = 1 nF 4 30 3 V+ = 15 V V- = - 15 V 10 V TH (V) Q (pC) 20 VL = 7 V 2 0 V+ = 12 V V- = 0 V - 10 1 - 20 VL = 5 V 0 - 30 -5 - 10 5 0 0 10 4 8 12 16 20 VSUPPLY (V) VS - Source Voltage (V) Switching Threshold vs. Supply Voltage Charge Injection vs. Source Voltage 10 20 IS(off) , ID(off) IS(off), ID(off) 0 0 I S , ID (pA) I S, I D (pA) - 20 ID(on) - 40 - 10 IS(on) + ID(on) - 20 - 60 V+ = 15 V V- = - 15 V For I(off), VD = - VS - 80 - 40 - 100 - 15 www.vishay.com 4 V+ = 12 V V- = 0 V For ID, V S = 0 V For IS, V D = 0 V - 30 - 10 -5 0 5 10 15 0 2 4 6 8 10 VD or V S - Drain or Source Voltage (V) VD or V S - Drain or Source Voltage (V) Source/Drain Leakage Currents Source/Drain Leakage Currents (Single 12-V Supply) 12 Document Number: 70054 S11-0984-Rev. G, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 160 500 V- = 0 V VL = 5 V 140 400 DG444 tON tOFF DG445 tON 300 100 t (ns) t (ns) 120 80 tON tON 60 200 tOFF 100 DG444 40 tOFF tOFF DG445 20 0 ± 10 ± 12 ± 14 ± 16 ± 18 ± 20 ± 22 8 10 12 V - SUPPLY (V) 14 16 18 20 22 V+ - Positive Supply (V) Switching Time vs. Power Supply Voltage Switching Times vs. Power Supply Voltage 100 mA 25 V+ = 15 V V- = - 15 V 10 mA 20 CS(on) + CD(on) I+, IGND 100 nA 15 C S, D (pF) I L , I-, I+, I GND 1 mA 10 nA -(I-) 1 nA 10 100 pA 5 CS(off), CD(off) IL 10 pA 1 pA 0 - 55 - 25 0 25 75 50 100 - 15 125 - 10 -5 0 5 10 15 VANALOG - Analog Voltage (V) Temperature (°C) Source/Drain Capacitance vs. Analog Voltage Supply Current vs. Temperature 160 V+ = 15 V V- = - 15 V 140 tON t (ns) 120 100 tON 80 tOFF 60 DG444 40 DG445 20 2 3 4 5 Input Voltage (V) Switching Time vs. Input Voltage Document Number: 70054 S11-0984-Rev. G, 23-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 Vishay Siliconix SCHEMATIC DIAGRAM Typical Channel V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Figure 1. TEST CIRCUITS +5V + 15 V Logic Input VL 0V D IN VO RL 1 k 3V tOFF Switch Input CL 35 pF VS VO V- GND tr < 20 ns tf < 20 ns 50 % 50 % V+ S ± 10 V 3V Switch Output - 15 V 80 % 0V tON Note: CL (includes fixture and stray capacitance) 80 % Logic input waveform is inverted for DG445. Figure 2. Switching Time +5V Rg VL + 15 V VO V+ D S IN Vg V O CL 1 nF 3V GND VO INX OFF ON OFF (DG444) V- INX - 15 V OFF ON Q = V O x CL OFF (DG445) Figure 3. Charge Injection www.vishay.com 6 Document Number: 70054 S11-0984-Rev. G, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 Vishay Siliconix TEST CIRCUITS C = 1 mF tantalum in parallel with 0.01 mF ceramic +5V + 15 V C VL S1 VS +5V + 15 V VL V+ C V+ D1 Rg = 50 50 IN1 S VS VO D 0 V, 2.4 V S2 Rg = 50 VO D2 NC RL IN2 0 V, 2.4 V RL IN 0 V, 2.4 V GND GND V- V- C C - 15 V - 15 V XTA LK Isolation = 20 log C = RF bypass VS Off Isolation = 20 log VS VO VO Figure 5. Off Isolation Figure 4. Crosstalk +5V + 15 V VL V+ C S Meter IN HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND V- f = 1 MHz C - 15 V Figure 6. Source/Drain Capacitances APPLICATIONS + 15 V +5V + 15 V VL V+ 1/ 4 + 15 V DG444 VOUT +5V 0V 10 k 0V VIN GND V- Figure 7. Level Shifter Document Number: 70054 S11-0984-Rev. G, 23-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 Vishay Siliconix APPLICATIONS VIN + - VOUT +5V + 15 V Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. V+ VL GAIN1 AV = 1 R1 90 k GAIN2 AV = 10 R2 5 k With SW4 Closed: VOUT = R1 + R2 + R3 + R4 VIN GAIN3 AV = 20 R3 4 k GAIN4 AV = 100 R4 1 k = 100 R4 DG444 or DG445 V- GND - 15 V Figure 8. Precision-Weighted Resistor Programmable-Gain Amplifier +5V + 15 V V1 Logic Input Low = Sample High = Hold DG444 + 15 V - 15 V + 15 V VIN + J202 C1 50 pF 5M 5.1 M R1 200 k 2N4400 VOUT V2 30 pF GND C2 1000 pF J500 J507 - 15 V Figure 9. Precision Sample-and-Hold Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70054. www.vishay.com 8 Document Number: 70054 S11-0984-Rev. G, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1