® ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.55 P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum –0.7 Diffusion & Thin Films Base Resistor Sheet Resist. Base Resistor Effective Width Change Base Resistor Voltage Coefficient, Narrow Size Base Resistor Voltage Coefficient, Wide Size Base Resistor Voltage Coefficient, Narrow Size Low TCR P-Poly Resistor Temperature Coefficient Low TCR Poly Base to Emitter Capacitance Base to Collector Cap. Base to Substrate Cap. Collector to Substrate Junction Capacitance Symbol ρRB ∆WRB Minimum 1.33 –0.2 Capacitance Gate Oxide Metal-1 to Poly-1 Metal-1 to Silicon Metal-2 to Metal-1 Poly-1 to Poly-2 © Daily Silver IMP 64 0.8 Typical 0.75 0.34 75 1.0 0.6 Maximum 0.95 Unit V V1/2 µA/V2 µm µm V V Comments 100x1.2µm 100x1.2µm 100x100µm 100x1.2µm Per side Typical –0.9 0.38 25 1.1 0.8 Maximum –1.1 29 1.3 Unit V V1/2 µA/V2 µm µm V V Comments 100x1.2µm 100x1.2µm 100x100µm 100x1.2µm Per side Typical 1.66 –0.6 Maximum 2.00 –1.0 Unit KΩ/o µm Comments 86 1.2 9 10 21 0.9 –9 –10 VOLTCO_N 11297 ppm/V 250x5µm VOLTCO_W 15468 ppm/V 250x25µm TEMPCO_N 2761 ppm/C 250x5µm ρHI-POLY TCR Poly 1.5 –100 CBEO CBCO CCS CJS Symbol COX CM1P CM1S CMM CP1P2 2.36 0 2.5 +50 fF/µm2 fF/µm2 fF/µm2 fF/µm2 33.8 56.9 35.1 0.1 Minimum 1.28 0.69 Typical 1.38 0.057 0.028 0.035 0.86 KΩ/o ppm/C Maximum 1.58 1.03 Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 fF/µm2 Comments 75 Process C1230 Electrical Characteristics NPN Bipolar Transistor Characteristics (Emitter size 4.5 x 4.5µm) Sym Min Typ Current Gain hFE 118 Early Voltage VA 22 Cut - Off Frequency fτ 6.2 Collector-Emitter Saturation Voltage VCESAT 0.3 Collector to Emitter Breakdown Voltage BVCEO 6.5 Collector to Base Breakdown Voltage BVCBO 17 Emitter to Base Breakdown Voltage BVEBO 6 Emitter Resistance RE 40 Base Spreading Resistance RB 1000 Collector Saturation Resistance RC 100 Base to Emitter Capacitance CBEO Base to Collector Capacitance CBCO Base to Substrate Capacitance CCS NPN Bipolar Transistor Characteristics (Emitter size 31.5 x 4.5µm) Sym Min Typ Current Gain hFE 110 Early Voltage VA 22 Cut - Off Frequency fτ 6.4 Collector-Emitter Saturation Voltage VCESAT 0.2 Collector to Emitter Breakdown Voltage BVCEO 6.5 Collector to Base Breakdown Voltage BVCBO 17 Emitter to Base Breakdown Voltage BVEBO 6 Emitter Resistance RE 6 Base Spreading Resistance RB 250 Collector Saturation Resistance RC 15 76 C1230 Max Unit Comments @100µA V GHz V V V V Ω Ω Ω pF pF pF Max Unit V GHz V V V V Ω Ω Ω Comments @100µA Process C1230 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Via Size Metal-1 Width/Space Metal-2 Width/space Gate Poly Width/Space p <100> 25 - 50 Ω-cm 5V N-well 2 2 1.5x1.5µm 1.5x1.5µm 2.5 / 1.5µm 2.5 / 1.5µm 1.5 / 2.0µm N+/P+ Width/Space N+ to P+ Space Contact to Poly Space Contact Overlap of Diffusion Contact Overlap of Poly Metal-1 Overlap of Contact Metal-1 Overlap of Via Metal-2 Overlap of Via Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch 2.5/1.2µm 9.0µm 1.5µm 1.0µm 1.0µm 1.0µm 1.0µm 1.0µm 65x65µm 5.0µm 80.0µm Special feature of C1206 Process: BiCMOS 1.2-µm technology with a cutoff frequency of 6.4GHz. P– MOS NPN– BiPOLAR N– MOS Metal-2 Metal-1 POLY2 POLY1 Field OX P+ P+ N+ N+ P N– Well Intermetal Dielectric N+ Field OX P P+ P N+ N– Collector P– epi Buried P– Layer Buried N+ Layer Buried N+ Layer P– substrate Cross-sectional view of the BiCMOS 1.2 C1230 process IC vs VC IB/IC vs VBE -3 475.7 10 10 10 -4 IB = 4 µA IC -5 IC (mA) IC/IB, Amps 10 IB = 5 µA IB -6 IB = 3 µA 47.07 /div IB = 2 µA 10 -7 IB = 1 µA 10 10 -8 -9 0 © Daily Silver IMP .12 .24 .36 VB (V) .48 .60 0 0 1 2 3 4 5 VC (V) 77 78 C1230