Process C1231 - DS-IMP

®
ISO 9001 Registered
Process C1231
HV BiCMOS 1.2µm
30V Double Metal - Double Poly
Electrical Characteristics
T=25oC Unless otherwise noted
Symbol
N-Channel High Voltage Transistor
Threshold Voltage
HVTN
Punch Through Voltage
HVBVDSSP
ON Resistance
HVPR0N
Minimum
Typical
Maximum
Unit
0.45
36
0.65
0.85
V
V
mΩcm2
V
1.4
VGS = 5V
VDS = 30V
Operating Voltage
N-Channel Low Voltage Transistor
Threshold Voltage
VTN
γN
Body Factor
βN
Conduction Factor
Effective Channel Length
LeffN
Width Encroachment
∆WN
Punch Through Voltage
BVDSSN
Poly Field Threshold Voltage VTFPN
Symbol
P-Channel High Voltage Transistor
Threshold Voltage
HVTP
Punch Through Voltage
HVBVDSSP
ON Resistance
HVPR0N
P-Channel Low Voltage Transistor
Threshold Voltage
VTP
γP
Body Factor
βP
Conduction Factor
Effective Channel Length
LeffP
Width Encroachment
∆WP
BVDSSP
Punch Through Voltage
Poly Field Threshold Voltage VTFP(P)
0.6
0.65
64.0
1.20
0.8
0.8
75.0
1.35
0.45
V
V1/2
µA/V 2
µm
µm
V
V
100x1.4µm
100x1.4µm
100x100µm
100x1.4µm
Per side
Comments
18
Minimum
Typical
Maximum
Unit
– 0.7
– 36
– 0.9
–1.1
V
V
mΩcm2
11.0
– 0.7
0.40
25.0
1.50
0.40
@VGS = 5V
@VDS = 0.1V
1.00
0.95
86.0
1.50
8
10
– 0.9
0.25
20.0
1.35
Comments
@VGS = 5V
– 0.5
0.55
30.0
1.65
V
V1/2
µA/V 2
µm
µm
V
V
100x1.4µm
100x1.4µm
100x100µm
100x1.4µm
Per side
–8
–10
–18
Symbol
COX
CM1P
CMM
Minimum
1.338
0.040
0.043
Typical
1.439
0.046
0.050
Maximum
1.569
0.052
0.057
Unit
fF/µm2
fF/µm2
fF/µm2
Comments
Symbol
High Voltage Vertical NPN Transistor
Beta
hFE
Early Voltage
VA
BVCEO
BVCEO
Low Voltage Vertical NPN Transistor
Beta
hFE
Early Voltage
VA
Cut-Off Frequency
fτ
Minimum
Typical
Maximum
Unit
Comments
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-2 to Metal-1
© Daily Silver IMP
130
200
35
50
140
34
1.89
V
V
240
4.5x4.5µm
V
GHz
79
Process C1231
Physical Characteristics
Diffusion & Thin Films
Symbol
Starting Material p<100>
ρN-well(f)
Well(field)Sheet Resistance
ρN+
N+ Sheet Resistance
N+ Junction Depth
xjN+
ρP+
P+ Sheet Resistance
P+ Junction Depth
xjP+
Base Resistance
RSHB_RB
High-Voltage Gate Oxide
HTGOX
Gate Oxide Thickness
TGOX
Interpoly Oxide Thickness
IPOX
ρPOLY1
Gate Poly Sheet Resistance
Poly2 Resistivity
RSH_PL P
ρM1
Metal-1 Sheet Resistance
ρM2
Metal-2 Sheet Resistance
Passivation Thickness
TPASS
Minimum
Typical
Maximum
Unit
1.5
20.0
2.1
35.0
0.4
75.0
0.4
1.66
22
22
42
22.0
2
45.0
25.0
200+900
2.7
50.0
KΩ/o
Ω/o
µm
Ω/o
µm
KΩ/sq
nm
nm
nm
Ω/o
kΩ/o
mΩ/o
mΩ/o
nm
50.0
1.33
33.6
15.0
1.5
35.0
19.0
100.0
2.00
50.4
30.0
2.5
65.0
35.0
Comments
n-well
oxide+nitride
Layout Rules
Min Channel Width
Min Spacing, Active Region, 5V
Poly1 Width/Space
Poly2 Width/Space
Contact Width/Space
Via Width/Space
Metal-1 Width/Space
Metal-2 Width/Space
Gate Poly Width/Space
N+/P+ Width/Space
80
C1231
4.0µm
2.0µm
1.4/2.0µm
3.0/2.0µm
1.4x1.4µm
1.4/1.6µm
2.6/1.6µm
2.6/1.6µm
1.5/2.0µm
2.5/2.0µm
Diffusion Overlap of Contact
Poly Overlap of Contact
Metal-1 Overlap of Contact
Contact to Poly Space
Minimum Pad Opening
Metal-1 Overlap of Via
Metal-2 Overlap of Via
Minimum Pad Opening
Minimum Pad to Pad Spacing
Minimum Pad Pitch
1.0µm
1.0µm
1.5µm
1.5µm
65x65µm
1.0µm
1.0µm
65x65µm
5.0µm
80µm