G2998/G2999 Global Mixed-mode Technology DDR Termination Regulator low-external component count systems. The G2998/ G2999 maintains a high speed operational amplifier that provides fast load transient response and only requires 20μF (2 × 10μF) of ceramic output capacitance. The G2998/G2999 supports remote sensing functions and all features required to power the DDR I / DDR II / DDR III / DDR IIIL VTT bus termination according to the JEDEC specification. In addition, the G2998/ G2999 also has an Enable (EN) pin that provides Suspend to RAM (STR) functionality. When EN is pulled low, VREF will remain active, but VTT output will be turned off and discharged to the ground through internal MOSFETs in G2998 version and VTT output will be in tri-state in G2999 version. A power saving advantage can be obtained in this mode through lowering the quiescent current to150μA @ VCC=3.3V. Features Support and DDR I (1.25VTT), DDR II (0.9 VTT) , DDR III (0.75 VTT) , and DDR IIIL (0.675VTT) Requirements Input Voltage Range: 3V to 5.5V VTT_IN Voltage Range: 1.2V to 3.6V Requires Only 20µF Ceramic Output Capacitance VTT Pulled Low by 2kΩ Resistor in Stand-By Mode (G2998 version) VTT Tri-State in Stand-By Mode (G2999 version) Integrated Divider Tracks 1/2 VDDQ for Both VTT and VREF Remote Sensing (VTTS) ±20mV Accuracy for VTT ±30mV Accuracy for VREF Built-In Soft-Start Over Current Protection Thermal Shutdown Protection MSOP-8 and SOP-8(Thermal Pad) Package The G2998/G2999 is available in the MSOP-8 and SOP-8 package with the Thermal pad. Ordering Information Applications DDR I/II/III/IIIL Memory Termination SSTL−2, SSTL−18 HSTL Termination ORDER NUMBER MARKING TEMP. RANGE PACKAGE (Green) G2998P81U G2998 -40°C~85°C MSOP-8 G2998F11U G2998 -40°C~85°C SOP-8 (FD) G2999F11U G2999 -40°C~85°C SOP-8 (FD) Note: P8: MSOP-8 F1: SOP-8 (FD) 1: Bonding Code U: Tape & Reel General Description The G2998/G2999 is a 3A sink/source tracking termination regulator. It is specifically designed for low-cost/ Pin Configuration DDR II G2998/G2999 G2998 GND 1 8 VTT EN 2 7 VTT_IN GND 1 EN 2 VTTS 3 6 VCC VTTS 3 VREF 4 5 VDDQ VREF 4 Thermal Pad 1 .8V 8 VTT 7 VTT_IN 6 VCC 5 VDDQ VTT_IN VREF C2 0.1µF VDDQ V CC=3.3V EN VTTS VCC EN VTT GND C1 2 x 1 0µF Top View MSOP- 8 SOP- 8 (FD) Note: Recommend c onnec ting the Thermal Pad to the GND for excellent power dis sipation. Typical Application Circuit DDR I 2.5V VTT_IN DDR III* VCC=3.3V EN VCC EN GND 1.5V V REF C2 0.1µF VDDQ VTT_IN VREF C2 0.1µF VDDQ VTTS V CC=3.3V VTT EN VCC VTTS EN VTT GND C1 2 x 10µF C1 2 x 1 0µF * Recommen ded V CC =3.3V TEL: 886-3-5788833 http://www.gmt.com.tw Ver: 1.5 Nov 22, 2011 1