Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = – 1.0 µA V Min – 20 – 50 – 30 – 50 – 50 IGSS VGS = ( ), VDS = Ø nA Max 0.10 (–10 V) 1.0 (– 30 V) 1.0 (–10 V) 1.0 (– 30 V) 1.0 (– 20 V) VGS(off) VDS = ( ), ID = 1.0 nA V Min/Max – 0.5/– 6.0 (10 V) – 0.4/– 5.0 (15 V) – 0.4/– 5.0 (10 V) – 0.25/– 4.5 (5.0 V) – 0.3/–10 (20 V) IDSS VDS = ( ), VGS = Ø mA Min/Max 0.3/6.5 (10 V) 0.6/6.5 (15 V) 0.3/1.4 (10 V) 0.5/12 (5.0 V) 5.0/150 (20 V) gfs VDS = ( ), VGS = Ø mS Typ 2.0 (10 V) 2.0 (15 V) 1.5 (10 V) 2.1 (5.0 V) 20 (20 V) Ciss VGS = ( ), VDS = ( ) pF Typ 4.0 (Ø) (Ø) 4.0 (Ø) (15 V) 4.0 (Ø) (10 V) 10 (Ø) (20 V) Crss VGS = ( ), VDS = ( ) pF Typ 1.2 (– 10 V) (Ø) 1.2 (Ø) (15 V) 1.0 (Ø) (10 V) 3.0 (Ø) (15 V) TO-226AA TO-226AA TO-226AA TO-226AA TO-18 SGD SGD SGD DGS SDG Package Configuration Pin Configuration 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com – Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters – 50 – 20 – 40 25 V Min BVGSS 1.0 (– 20 V) 0.1 (–10 V) 1.0 (– 30 V) 1.0 (10 V) nA Max IGSS – 0.3/–10 (20 V) – 0.5/– 2.0 (–10 V) – 0.3/– 1.2 (10 V) – 0.2/–1.5 (–10 V) V Min/Max VGS(off) 5.0/150 (20 V) 5.0/20 (10 V) 5.0/30 (10 V) 1.0/18 (–10 V) mA Min/Max IDSS 20 (20 V) 30 (10 V) 60 (10 V) 9 (–10 V) mS Typ gfs 10 (Ø) (20 V) 15 (Ø) (10 V) 75 (Ø) (10 V) 15 (Ø) (–10 V) pF Typ Ciss 3.0 (Ø) (15 V) 4.0 (Ø) (10 V) 15 (Ø) (10 V) 3 (Ø) (–10 V) pF Typ Crss TO-18 TO-18 TO-18 TO-18 SDG SDG DGS DGS www.interfet.com Package Configuration Pin Configuration 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page D-4 D-4 01/99 IFN112 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain ¥ Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IFN112 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS – 50 V 10 mA 360 mW 2.88 mW/°C – 65°C to 200°C Process NJ132H Max Unit – 50 Test Conditions V IG = – 1 µA, VDS = ØV – 0.25 1.2 – 0.1 – 1.2 9.0 nA V mA VDS = ØV, VGS = – 30V VDS = 15V, ID = 100 nA VDS = 15V, VGS = ØV 7 34 mS VDS = 15V, VGS = ØV f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Typ Common Source Input Capacitance Ciss 12 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 3 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e¯ N 2.5 nV/√Hz VDS = 10V, ID = 5.0 mA f = 1 kHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 TOÐ18 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com Databook.fxp 1/13/99 2:09 PM Page D-5 D-5 01/99 IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IFN146 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Typ Process NJ450 Max – 40 – 0.3 – 40 V 10 mA 375 mW 3 mW/°C – 65°C to 200°C Unit Test Conditions V IG = – 1 µA, VDS = ØV –1 nA VGS = – 30V, VDS = ØV –1 µA VGS = – 30V, VDS = ØV – 1.2 V VDS = 10V, ID = 1 µA 30 mA VDS = 10V, VGS = ØV mS VDS = 10V, VGS = ØV IDSS = 5 mA f = 1 kHz TA = 150°C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 75 pF VDS = 10V, VGS = ØV f = 1 kHz Common Source Reverse Transfer Capacitance Crss 15 pF VDS = 10V, ID = ØA f = 1 kHz Noise Figure NF dB VDS = 10V, ID = 5 mA RG = 100Ω f = 1 kHz Differential Gate Source Voltage |VGS1 – VGS2| mV VDS = 10V, ID = 5 mA 30 TOÐ71 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Gate, 3 Drain, 5 Source, 6 Gate, 7 Drain www.interfet.com 40 1 20 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: IFN147 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ – 40 V 10 mA 300 mW 2.4 mW/°C Process NJ450 Max – 40 Unit Test Conditions V IG = – 1 µA, VDS = ØV –1 nA VGS = – 30V, VDS = ØV –1 µA VGS = – 30V, VDS = ØV – 0.3 – 1.2 V VDS = 10V, ID = 1 µA IDSS 5 30 mA VDS = 10V, VGS = ØV Common Source Forward Transconductance gfs 30 mS VDS = 10V, VGS = ØV IDSS = 5 mA f = 1 kHz Common Source Input Capacitance Ciss 75 pF VDS = 10V, VGS = ØV f = 1 kHz Common Source Reverse Transfer Capacitance Crss 15 pF VDS = 10V, ID = Ø f = 1 Hz Noise Figure NF dB VDS = 10V, ID = 5 mA RG = 100Ω f = 1 kHz TA = 150°C Dynamic Electrical Characteristics 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 40 1 10 dB f = 100 Hz TOÐ18 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Gate & Case, 3 Drain www.interfet.com