Databook.fxp 1/13/99 2:09 PM Page B-45 B-45 01/99 IFN5432, IFN5433, IFN5434 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Low On Resistance Switches ¥ Choppers IFN5432 At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Min V(BR)GSS – 25 IGSS Gate Source Cutoff Voltage VGS(OFF) –4 Drain Saturation Current (Pulsed) IDSS 150 ID(OFF) Drain Source ON Voltage VDS Static Drain Source ON Resistance rDS(ON) Min – 10 IFN5434 Min – 200 –3 –9 100 –1 Process NJ903 Max Unit V IG = – 1µA, VDS = ØV – 200 pA VGS = – 15V, VDS = ØV – 200 nA VGS = – 15V, VDS = ØV –4 V VDS = 5V, IG = 3 nA – 25 – 200 – 200 2 Max – 25 – 200 Gate Reverse Current Drain Cutoff Current Max IFN5433 – 25 V 100 mA 300 mW 2.4 mW/°C 30 Test Conditions mA VDS = 15V, VGS = ØV pA VDS = 5V, VGS = – 10V 200 nA VDS = 5V, VGS = – 10V 100 mV VGS = ØV, ID = 10 mA 7 10 Ω VDS = ØV, ID = 10 mA 200 200 200 200 200 50 70 5 TA = 150°C TA = 150°C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 5 7 10 Ω VGS = ØV, ID = ØA f = 1 kHz Common Source Input Capacitance Ciss 60 60 60 pF VDS = ØV, VGS = – 10V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 20 20 20 pF VDS = ØV, VGS = – 10V f = 1 MHz Turn ON Delay Time td(on) 4 4 4 ns Rise Time tr 1 1 1 ns Turn OFF Delay Time td(off) 6 6 6 ns Fall Time tf 30 30 30 ns VDD = 1.5 V, VGS(ON) = ØV VGS(OFF) = – 12V, ID(ON) = 10 mA (IFN5432) RL = 145 Ω (IFN5433) RL = 143 Ω (IFN5433) RL = 140 Ω Switching Characteristics TOÐ52 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375