M54HCU04 RAD HARD HEX INVERTER (SINGLE STATE) ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 5ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 10% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 04 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9401-055 DILC-14 FPC-14 Table 1: Order Codes PACKAGE FM EM DILC FPC M54HCU04D M54HCU04K M54HCU04D1 M54HCU04K1 As internal circuit is composed of a single stage inverter, it can be used in crystal oscillator. All inputs are equipped with protection circuits against static discharge and transient excess voltage. DESCRIPTION The M54HCU04 is an high speed CMOS HEX INVERTER (SINGLE STATE) fabricated with silicon gate C2MOS technology. Figure 1: Pin Connection July 2004 Rev. 1 1/8 M54HCU04 Figure 2: IEC Logic Symbols Figure 3: Input And Output Equivalent Circuit Table 2: Pin Description PIN N° SYMBOL 1, 3, 5, 9, 11, 13 2, 4, 6, 8, 10, 12 7 14 NAME AND FUNCTION 1A to 6A Data Inputs 1Y to 6Y Data Outputs GND VCC Ground (0V) Positive Supply Voltage Table 3: Truth Table A Y L H H L Table 4: Absolute Maximum Ratings Symbol VCC Parameter Supply Voltage Value Unit -0.5 to +7 V -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 V DC Input Diode Current ± 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ± 50 mA VI DC Input Voltage VO DC Output Voltage IIK ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg Storage Temperature TL Lead Temperature (10 sec) V 300 mW -65 to +150 °C 265 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 2/8 M54HCU04 Table 5: Recommended Operating Conditions Symbol VCC Parameter Supply Voltage Value Unit 2 to 6 V VI Input Voltage 0 to VCC V VO Output Voltage 0 to VCC V Top Operating Temperature Input Rise and Fall Time tr, tf -55 to 125 °C VCC = 2.0V 0 to 1000 ns VCC = 4.5V 0 to 500 ns VCC = 6.0V 0 to 400 ns Table 6: DC Specifications Test Condition Symbol VIH VIL VOH VOL II ICC Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Value TA = 25°C VCC (V) Min. 2.0 4.5 6.0 2.0 4.5 6.0 Typ. Max. 1.7 3.6 4.8 -40 to 85°C -55 to 125°C Min. Min. Max. 1.7 3.6 4.8 0.3 0.9 1.2 Max. 1.7 3.6 4.8 0.3 0.9 1.2 Unit V 0.3 0.9 1.2 V 2.0 IO=-20 µA 1.8 2.0 1.8 1.8 4.5 IO=-20 µA 4.0 4.5 4.0 4.0 6.0 IO=-20 µA 5.5 5.9 5.5 5.5 4.5 IO=-4.0 mA 4.18 4.31 4.13 4.10 6.0 IO=-5.2 mA 5.68 5.8 5.63 5.60 2.0 IO=20 µA 0.0 0.2 0.2 0.2 4.5 IO=20 µA 0.0 0.5 0.5 0.5 6.0 IO=20 µA 0.1 0.5 0.5 0.5 4.5 IO=4.0 mA 0.17 0.26 0.33 0.40 6.0 IO=5.2 mA 0.18 0.26 0.33 0.40 6.0 VI = VCC or GND ± 0.1 ±1 ±1 µA 6.0 VI = VCC or GND 1 10 20 µA V V Table 7: AC Electrical Characteristics (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 Value TA = 25°C Min. Typ. Max. 30 8 7 18 6 5 75 15 13 60 12 10 -40 to 85°C -55 to 125°C Min. Min. Max. 95 19 16 75 15 13 Unit Max. 110 22 19 90 18 15 ns ns 3/8 M54HCU04 Table 8: Capacitive Characteristics Test Condition Symbol Parameter VCC (V) Value TA = 25°C Min. Typ. Max. 10 CIN Input Capacitance 5.0 5 CPD Power Dissipation Capacitance (note 1) 5.0 13 -40 to 85°C -55 to 125°C Min. Min. Max. 10 Unit Max. 10 pF pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC Figure 4: Test Circuit CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) Figure 5: Waveform - Propagation Delay Time (f=1MHz; 50% duty cycle) 4/8 M54HCU04 DILC-14 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 2.1 2.54 0.083 0.100 a1 3.00 3.70 0.118 0.146 a2 0.63 0.88 1.14 0.025 0.035 0.045 B 1.82 2.03 2.39 0.072 0.080 0.094 b 0.40 0.45 0.50 0.016 0.018 0.020 b1 0.20 0.254 0.30 0.008 0.010 0.012 D 18.79 19.00 19.20 0.740 0.748 0.756 E 7.36 7.62 7.87 0.290 0.300 0.310 e 2.54 0.100 e1 15.11 15.24 15.37 0.595 0.600 0.605 e2 7.62 7.87 8.12 0.300 0.310 0.320 F 7.11 7.75 0.280 I 0.305 3.70 K 10.90 L 1.14 1.27 0.146 12.1 0.429 1.5 0.045 0.476 0.050 0.059 0016173H 5/8 M54HCU04 FPC-14 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 6.75 6.91 7.06 0.266 0.272 0.278 B 9.76 9.95 10.14 0.384 0.392 0.399 C 1.49 1.95 0.059 D 0.10 0.127 0.15 0.004 0.005 0.006 E 7.50 7.62 7.75 0.295 0.300 0.305 F G 1.27 0.38 0.050 0.43 H L 0.077 0.48 0.015 0.017 6.0 0.019 0.236 18.75 22.0 0.738 0.866 M 0.38 0.015 N 4.31 0.170 G F D H 14 8 L N A 7 1 H E B 6/8 M C 016029E M54HCU04 Table 9: Revision History Date Revision 27-Jun-2004 1 Description of Changes First Release 7/8 M54HCU04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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