RENESAS 2SC5050

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
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third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
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subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
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rising from these inaccuracies or errors.
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(http://www.renesas.com).
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or system that is used under circumstances in which human life is potentially at stake. Please contact
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when considering the use of a product contained herein for any specific purposes, such as apparatus or
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contained therein.
2SC5050
Silicon NPN Epitaxial
ADE-208-1130A (Z)
2nd. Edition
Mar. 2001
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 11 GHz Typ
• High gain, low noise figure
PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK
3
1
2
Note:
1. Emitter
2. Base
3. Collector
Marking is “YZ–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2SC5050
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
8
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 12 V, IE = 0
I CEO
—
—
1
mA
VCE = 8 V, RBE =
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
50
120
250
Collector output capacitance
Cob
—
0.6
1.1
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
8.0
11.0
—
GHz
VCE = 5 V, IC = 20 mA
S21 Parameter
|S21|
—
13.5
—
dB
VCE = 5 V, IC = 20 mA,
f = 1000 MHz
Power gain
PG
11.0
14.0
—
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.1
2.0
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
See characteristic curves of 2SC4926.
2
VCE = 5 V, IC = 20 mA
2SC5050
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
150
100
50
0
50
100
Ambient Temperature Ta (°C)
150
3
2SC5050
Package Dimensions
As of January, 2001
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
4
MPAK
—
Conforms
0.011 g
2SC5050
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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:
:
:
:
http://semiconductor.hitachi.com/
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http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
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Germany
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Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
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Electronic Components Group.
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Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
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(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
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Group III (Electronic Components)
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World Finance Centre,
Harbour City, Canton Road
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Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
5