TA2153FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2153FN RF Amplifier for Digital Servo CD System TA2153FN is a 3-beam type PUH compatible RF amplifier for digital servo to be used in the CD system. In combination with a CMOS single chip processor TC9462F/TC9495F, a CD system can be composed very simply. Features · Built-in amplifier for reference (VRO, 2VRO) supply. · Built-in auto laser power control circuit. · Built-in RF amplifier. · Built-in AGC amplifier. · Built-in focus error amp and tracking error amp. · Built-in sub-beam adder signal amplifier. · Built-in gain change circuit for CD-RW. · Capable of tracking balance control with TC9462F/TC9495F. · Capable of RF gain adjustment circuit with TC9462F/TC9495F. · Built-in signal amplifier for track counter. · Capable of 4 times speed operation. · 30 pin mini flat package. Weight: 0.17 g (typ.) 1 2003-01-18 TA2153FN Block Diagram 36 pF 10 k9 15 k9 15 k9 10 pF FEO 16 50 k9 15 SBAD 3 pF 30 k9 FEN 17 14 TEO 10 k9 60 k9 20 k9 SEB 18 VRO 19 10 pF 13 TEN 3 pF 30 k9 10 k9 12 2VRO 20 k9 20 k9 20 k9 11 k9 20 k9 100 9 83 k9 SW1 2.9 k9 10 SEL 1 k9 SW2 9 LDO 100 k9 RFCT 22 PKC 23 11 TEB 48 k9 100 k9 BTC 21 3 STATE DET. 21.82 k9 12 k9 12 k9 RFRP 20 SW3 1.4 k9 238 k9 11 k9 15 pF 20 k9 RFRPIN 24 13 k9 8 MDI 2.26 k9 I (1/4) BOTTOM PEAK I-I 7 TNI 238 k9 I (3/4) I (1/4) 15 pF RFGO 25 6 TPI I-I I (3/4) 150 k9 90 k9 60 k9 GVSW 26 20 k9 60 k9 5 FPI 1 k9 1 k9 4 FNI 150 k9 40 pF AGC Amp. AGCIN 27 40 pF RFO 28 3 GMAD GND 29 2 RFGC RFN2 30 1 VCC LDC SEL RFRP Detect Frequency GVSW Mode SEB Bottom Detect Peak Detect GND CD-RW GND ON ON HiZ ON ON VCC OFF ON SW1 SW2 SW3 GND ON OFF OFF Low HiZ HiZ OFF ON ON Low VCC VCC OFF ON ON High 2 Normal 2003-01-18 TA2153FN Pin Function Pin No. Symbol I/O Function Description Remarks 1 VCC ¾ 2 RFGC I RF amplitude adjustment control signal input terminal. Controlled by 3-PWM signals. (PWM carrier = 88.2 kHz) 3 GMAD I Open loop gain adjustment terminal for AGC amp. 4 FNI I Main beam I-V amp input terminal. Connected to pin diode output B + D (through resistor). 5 FPI I Main beam I-V amp input terminal. Connected to pin diode output A + C (through resistor). 6 TPI I Sub beam I-V amp input terminal. Connected to pin diode output F. 7 TNI I Sub beam I-V amp input terminal. Connected to pin diode output E. 8 MDI I Monitor photo diode amp input terminal. Connected to monitor photo diode. 9 LDO O Laser diode amp input terminal. Connected to laser diode control circuit. ¾ Power supply input terminal. 3 signals input. (2VRO, VRO, GND) (Note1) Laser diode control signal input terminal and APC circuit ON/OFF control signal terminal. 10 SEL I SEL Level APC Circuit LDO Detect Frequency GND OFF Connected to VCC through resister (1 kW) Low HiZ ON Control signal output Low VCC ON Control signal output High 3 signals input. (VCC, HiZ, GND) 11 TEB I Tracking error balance adjustment signal input terminal. Controlled by 3-PWM signal. (PWM carrier = 88.2 kHz) 12 2VRO O Reference voltage (2VRO) output terminal. 2VRO = 4.2 V when VCC = 5 V 13 TEN I TE amp negative input terminal. 14 TEO O TE error signal output terminal. ¾ 15 SBAD O Sub beam adder signal output terminal. ¾ 16 FEO O Focus error signal output terminal. ¾ 17 FEN I FE amp negative input terminal. 3 signals input. (2VRO, VRO, GND) ¾ Connected to TEO through feedback resistor. Connected to FEO through feedback resistor. RFRP output circuit switching terminal. 18 SEB SEB Level Bottom Detection Peak Detection GND ON ON VCC OFF ON I Reference signal (VRO) output terminal. 19 VRO O 20 RFRP O Track count signal output terminal. 21 BTC I Time constant adjustment terminal for bottom detection. VRO = 2.1 V when VCC = 5 V 3 Low (GND) is for normal use. ¾ ¾ Adjusted by capacitance. 2003-01-18 TA2153FN Pin No. Symbol I/O Function Description Remarks 22 RFCT O RFRP signal center level output terminal. 23 PKC I Time constant adjustment terminal for peak detection. 24 RFRPIN I Input terminal for track count signal output amp. ¾ 25 RFGO O Output terminal for RF signal amplitude adjustment amp. ¾ ¾ Adjusted by capacitance. Amp (AGC, FE, TE) gain switching terminal. 26 GVSW I GVSW Mode GND CD-RW HiZ Normal VCC Normal Low (GND) is for 5 times gain. Connected to RFO through capacitance. 27 AGCIN I Input terminal for RF signal amplitude adjustment amp. 28 RFO O Output terminal for RF signal amp. ¾ 29 GND ¾ Ground terminal. ¾ 30 RFN2 I Connected to pin-diode output A + B + C + D (through resistor). Input terminal for RF signal amp. Note 1: Pin3 (GMAD) is gm adjustment terminal for AGC amp by applying a voltage (between 1.5 V and 4.2 V). If pin3 (GMAD) is open, voltage of this terminal is fixed VR by IC interior. Characteristic of frequency (open-loop characteristic) and voltage is as below. GMAD Terminal Voltage 1.5 V VCC 4.2 V Gain GMAD 3 (Note2) VR VR Frequency By changing a voltage (pin3) between 1.5 V and 4.2 V, frequency band width is changed. Note 2: Current is changed by pin3 (GMAD) voltage. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCC 8 V Power dissipation PD 500 mW Operating temperature Topr -40~85 °C Storage temperature Tstg -55~150 °C Power supply voltage 4 2003-01-18 TA2153FN Electrical Characteristics (unless otherwise specified, VCC = 5 V, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Assured power supply voltage VCC ¾ ¾ 4.5 5.0 5.5 V Power supply current ICC ¾ 26 35 44 mA 2VR ¾ 4.0 4.2 4.4 V IOH2 ¾ DV = -0.2 V 2.0 ¾ ¾ IOL2 ¾ DV = +0.1 V 0.1 ¾ ¾ VR ¾ 2.0 2.1 2.2 V DVR ¾ -3.0 0 3.0 % Characteristics Power supply Reference voltage Reference voltage Output current (2VRO) Input current Reference voltage Reference Reference voltage limit voltage Output current (VRO) RF2 (AGC) ¾ ¾ 2 ´ VR/2VR - 1 mA IOH1 ¾ DV = -0.2 V 5.0 ¾ ¾ IOL1 ¾ DV = +0.1 V 5.0 ¾ ¾ Frequency band width fc ¾ -3dB point, RIN = 6 kW Between RFO - RFN2: 33 kW ¾ 8 ¾ MHz Output slew rate SR ¾ CRFO = 20 pF, RIN = 6 kW Between RFO - RFN2: 33 kW ¾ 22 ¾ V/ms Output offset voltage VOS ¾ VR Reference Between RFO - RFN2: 33 kW Input: VR short ¾ -100 ¾ mV Upper limit output voltage VOH ¾ GND Reference 3.8 ¾ ¾ Lower limit output voltage VOL ¾ GND Reference ¾ ¾ 0.9 Permissive load resistance RLM ¾ 10 ¾ ¾ Lower limit voltage gain 1 (normal mode) Gv1L ¾ f = 1 MHz, RFGC = 0.6 V, GVSW = VCC, GMAD = VR 0.6 0.7 0.8 Upper limit voltage gain 1 (normal mode) Gv1H ¾ f = 1 MHz, RFGC = 3.6 V, GVSW = VCC, GMAD = VR 1.3 1.5 1.7 Lower limit voltage gain 2 (CD-RW mode) Gv2L ¾ f = 1 MHz, RFGC = 0.6 V, GVSW = GND, GMAD = VR 2.7 3.2 3.6 Upper limit voltage gain 2 (CD-RW mode) Gv2H ¾ f = 1 MHz, RFGC = 3.6 V, GVSW = GND, GMAD = VR 5.8 6.8 7.7 Frequency band width (normal mode) fc1 ¾ -0.5dB point, RFGC = 2.1 V, GVSW = VCC, GMAD = VR ¾ 12 ¾ Frequency band width (CD-RW mode) fc2 ¾ -0.5dB point, RFGC = 2.1 V, GVSW = GND, GMAD = VR ¾ 12 ¾ Output slew rate SR ¾ CRFGO = 20 pF ¾ 40 ¾ VOS1 ¾ ¾ -100 ¾ Input current RF1 SEL = HiZ Output offset voltage 1 (normal mode) ¾ Output offset voltage 2 (CD-RW mode) VOS2 ¾ Upper limit output voltage VOH ¾ Lower limit output voltage VOL ¾ Permissive load resistance RLM ¾ Gv ¾ f = 1 kHz VMDI ¾ VLDOP II Voltage gain Operation ref. Voltage APC LD off voltage Input bias current GVSW = VCC VR Reference GMAD = VR Input: Open mA V kW V/V MHz V/ms mV GVSW = GND ¾ 0 ¾ GND Reference 3.7 ¾ ¾ GND Reference ¾ ¾ 0.9 10 ¾ ¾ kW ¾ 200 ¾ V/V VLDO = 3.5 VDC 170 178 192 mV ¾ SEL = GND, VCC Reference -0.7 ¾ ¾ V ¾ MDI = 178 mV -200 ¾ 200 nA ¾ 5 V 2003-01-18 TA2153FN Symbol Test Circuit Voltage gain 1 (normal mode) Gv1 ¾ Voltage gain 2 (CD-RW mode) Gv2 ¾ Gain balance 1 (normal mode) GB1 ¾ Gain balance 2 (CD-RW mode) GB2 ¾ f = 1 kHz RNF = 91 kW RFI = 47 kW Frequency band width fc ¾ -3dB point Output offset voltage 1 (normal mode) VOS1 ¾ Output offset voltage 2 (CD-RW mode) VOS2 Upper limit output voltage Characteristics FE TE Min Typ. Max GVSW = VCC 4.3 4.8 5.3 GVSW = GND 19.3 21.6 23.9 GVSW = VCC -1.0 ¾ 1.0 GVSW = GND -1.0 ¾ 1.0 ¾ 26.5 ¾ -20 ¾ 20 ¾ RNF = 91 kW GVSW = VCC RFI = 47 kW VR Reference Input: VR short GVSW = GND -50 ¾ 50 VOH ¾ GND Reference 3.8 ¾ ¾ Lower limit output voltage VOL ¾ GND Reference ¾ ¾ 0.5 Permissive load resistance RLM ¾ 10 ¾ ¾ Voltage gain 1 (normal mode) Gv1 ¾ GVSW = VCC 10.9 12.3 13.5 Voltage gain 2 (CD-RW mode) Gv2 ¾ GVSW = GND 50 56 60 max voltage Voltage ratio gain adjustable min voltage range ratio TEB = GND 40 45 50 DGv ¾ TEB = 2VR -50 -45 -40 Gain balance 1 (normal mode) GB1 ¾ GVSW = VCC -1.0 ¾ 1.0 Gain balance 2 (CD-RW mode) GB2 ¾ GVSW = GND -1.0 ¾ 1.0 fc ¾ ¾ 44 ¾ Output offset voltage (normal mode) VOS1 ¾ -80 ¾ 80 Output offset voltage (CD-RW mode) VOS2 ¾ RNF = 100 kW GVSW = VCC RFI = 47 kW VR Reference Input: VR short GVSW = GND -300 ¾ 300 Upper limit output voltage VOH ¾ GND Reference 3.8 ¾ ¾ Lower limit output voltage VOL ¾ GND Reference ¾ ¾ 0.5 Permissive load resistance RLM ¾ 10 ¾ ¾ Voltage gain 1 (normal mode) Gv1 ¾ GVSW = VCC 2.0 2.7 3.4 Voltage Gain 2 (CD-RW mode) Gv2 ¾ f = 1 kHz RTI = 47 kW TEB = VR GVSW = GND 9.0 12.2 15.3 fc ¾ -3dB point ¾ 44 ¾ Operation reference voltage 1 (normal mode) VOPR1 ¾ -1.15 -1.05 -0.95 Operation reference voltage 2 (CD-RW mode) VOPR2 ¾ VR Reference GVSW = VCC RTI = 47 kW Input: VR short GVSW = GND -1.0 -0.9 -0.8 Upper limit output voltage VOH ¾ GND Reference 3.8 ¾ ¾ Lower limit output voltage VOL ¾ GND Reference ¾ ¾ 1.3 Permissive load resistance RLM ¾ 10 ¾ ¾ Frequency characteristic cut-off frequency Frequency Band Width SBAD Test Condition f = 1 kHz RNF = 91 kW RFI = 47 kW V/V dB ¾ f = 1 kHz RFN = 100 KW RTI = 47 kW kHz mV V kW V/V TNI input TEB = VR Reference % f = 1 kHz RNF = 100 kW RFI = 47 kW TEB = VR dB RNF = 100 kW -3dB point ¾ kHz mV V kW V/V ¾ 6 Unit kHz V V kW 2003-01-18 TA2153FN Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Voltage gain Gv ¾ ¾ ¾ 1.7 ¾ V/V Detection frequency characteristic 1 fc1 ¾ SEL = HiZ ¾ 100 ¾ Detection frequency characteristic 2 fc2 ¾ SEL = VCC ¾ 200 ¾ Operation reference voltage 1 VOPR1 ¾ VR Reference No Input -1.1 -1.0 -0.9 Operation reference voltage 2 VOPR2 ¾ VR Reference 700 kHz, 1.2 Vp-p 0.7 0.8 0.9 Permissive load resistance RLM ¾ 10 ¾ ¾ RFCT Detection frequency characteristic 1 fc1 ¾ CBTC = 0.22 mF ¾ 70 ¾ RFRP ® Detection frequency characteristic 2 fc2 ¾ CPKC = 0.22 mF ¾ 70 ¾ Output offset voltage VOS ¾ RFRP Reference, RFCT -50 ¾ 50 kHz RFRP V ¾ kW Hz RFCT Note: mV If the IC is used abnormally (ex. wrongly mounted), it may be damaged or destroyed. 7 2003-01-18 TA2153FN Package Dimensions Weight: 0.17 g (typ.) 8 2003-01-18 TA2153FN RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2003-01-18