RENESAS 2SK1636

2SK1636(L), 2SK1636(S)
Silicon N Channel MOS FET
REJ03G0961-0200
(Previous: ADE-208-1304)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
D
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7
2
3
S
2SK1636(L), 2SK1636(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
Ratings
250
Unit
V
VGSS
ID
±30
15
V
A
60
15
A
A
1
Drain peak current
Body to drain diode reverse drain current
ID(pulse)*
IDR
2
Channel dissipation
Channel temperature
Pch*
Tch
75
150
W
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Tstg
–55 to +150
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V(BR)DSS
Min
250
Typ
—
Max
—
Unit
V
Gate to source breakdown voltage
Gate to source leak current
V(BR)GSS
IGSS
±30
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
Zero gate voltage drain current
Gate to source cutoff voltage
IDSS
VGS(off)
—
2.0
—
—
250
3.0
µA
V
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
Forward transfer admittance
RDS(on)
—
0.22
0.27
Ω
ID = 8 A, VGS = 10 V *
|yfs|
6.0
10.0
—
S
ID = 8 A, VDS = 10 V *
Input capacitance
Output capacitance
Ciss
Coss
—
—
1250
510
—
—
pF
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
Crss
td(on)
—
—
85
24
—
—
pF
ns
tr
85
110
—
—
ns
ns
Rise time
Turn-off delay time
td(off)
—
—
Fall time
Body to drain diode forward voltage
tf
VDF
—
—
60
1.0
—
—
ns
V
trr
—
400
—
ns
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 7
Test conditions
ID = 10 mA, VGS = 0
3
3
ID = 8 A, VGS = 10 V,
RL = 3.75 Ω
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0,
diF/dt = 100 A/µs
2SK1636(L), 2SK1636(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
µs
)
m
s
10
s
m
O
)
ot
Sh
n
tio
ra
3
(1
pe
=
(T C
1
°C
25
Drain Current ID (A)
0
1
=
C
40
10
PW
80
D
)
Channel Dissipation Pch (W)
10
µs
30
10
O
is per
lim at
ite ion
d in
by th
R is
ar
DS
ea
(o
n
100
120
0.3
Ta = 25°C
0.1
0
50
100
1
150
Case Temperature TC (°C)
VDS = 10 V
Pulse Test
Pulse Test
16
5V
12
8
4.5 V
4
4V
16
12
8
Ta = 75°C
25°C
–25°C
4
VGS = 3.5 V
4
8
12
16
4
2
6
10
8
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse Test
8
6
4
ID = 15 A
10 A
2
0
0
20
5A
2
4
6
8
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
10
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
0
300 1,000
Typical Transfer Characteristics
5.5 V
8V
100
20
Drain Current ID (A)
Drain Current ID (A)
10 V
30
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
10
3
5
Pulse Test
2
1
VGS = 10 V
0.5
15 V
0.2
0.1
0.05
1
2
5
10
20
Drain Current ID (A)
50
100
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance yfs (S)
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
VGS = 10 V
0.8
0.6
10 A
ID = 15 A
0.4
5A
0.2
0
–40
40
0
80
120
160
20
TC = –25°C
10
25°C
75°C
5
2
1
0.5
0.5
1
2
5
10
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
200
100
50
VGS = 0
f = 1 MHz
1
2
5
10
20
100
Crss
0
50
10
30
20
40
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
500
20
VDD = 50 V
100 V
200 V
16
VGS
300
ID = 15 A
12
VDS
8
4
VDD = 200 V
100 V
50 V
0
0
Coss
10
10
0.5
100
Ciss
1,000
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
20
200
50
10,000
500
400
20
Body to Drain Diode Reverse
Recovery Time
20
40
60
80
Gate Charge Qg (nc)
Rev.2.00 Sep 07, 2005 page 4 of 7
100
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
VDS = 10 V
Pulse Test
Drain Current ID (A)
1,000
Drain to Source Voltage VDS (V)
50
Case Temperature TC (°C)
50
500
Switching Time t (ns)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK1636(L), 2SK1636(S)
200
td (off)
100
tf
50
tr
td (on)
20
VGS = 10 V, PW = 2 µs
duty < 1%
10
5
0.2
0.5
1
2
5
Drain Current ID (A)
10
20
2SK1636(L), 2SK1636(S)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
20
Pulse Test
16
12
8
4
VGS = 10 V
VGS = 0, –5 V
0.4
0
0.8
1.2
1.6
2.0
Normalized Transient Thermal Impedance γS (t)
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D=1
1.0
0.5
0.3
0.2
θch–c (t) = γS (t) • θch–c
θch–c = 1.67°C/W, TC = 25°C
0.1
0.1
0.05
PDM
0.02
0.03 0.01
1
0.01
10 µ
ot
Sh
lse
Pu
T
100 µ
1m
10 m
PW
100 m
D = PW
T
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveforms
Vin Monitor
90%
Vout Monitor
Vin
D.U.T
RL
50 Ω
Vin
10 V
Rev.2.00 Sep 07, 2005 page 5 of 7
VDD
.
=. 30 V
Vout
td (on)
10%
10%
90%
tr
10%
90%
td (off)
tf
2SK1636(L), 2SK1636(S)
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]

PRSS0004AE-A
LDPAK(L) / LDPAK(L)V
1.40g
8.6 ± 0.3
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
RENESAS Code
Package Name
PRSS0004AE-B
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
Unit: mm
1.30g
(1.5)
10.0
Rev.2.00 Sep 07, 2005 page 6 of 7
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
1.7
SC-83
2.49 ± 0.2
11.0 ± 0.5
11.3 ± 0.5
0.3
10.0 +– 0.5
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.86 +– 0.1
JEITA Package Code
Unit: mm
2.2
2SK1636(L), 2SK1636(S)
Ordering Information
Part Name
2SK1636L-E
2SK1636STL-E
Quantity
500 pcs
1000 pcs
Shipping Container
Box (Sack)
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
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Colophon .3.0