HAT1127H Silicon P Channel Power MOS FET Power Switching REJ03G1330-0500 Rev.5.00 Jan 20, 2006 Features • • • • Capable of –4.5 V gate drive Low drive current High density mounting Ultra Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS = –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 1, 2, 3 4 5 4 G 3 12 4 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C Rev.5.00 Jan 20, 2006 page 1 of 6 Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings –30 –20/+10 –40 –160 –40 Unit V V A A A Pch Note2 θch-c Note2 Tch Tstg 30 4.17 150 –55 to +150 W °C/W °C °C HAT1127H Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 3. Pulse test Rev.5.00 Jan 20, 2006 page 2 of 6 Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min –30 — — –1.0 — — 40 — — — — — — — — — — Typ — — — — 3.6 5.3 70 5600 1180 890 125 15 28 25 40 130 115 Max — ±0.1 –1 –2.5 4.5 7.7 — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns — — –0.88 120 –1.15 — V ns Test Conditions ID = –10 mA, VGS = 0 VGS = –20/+10 V, VDS = 0 VDS = –30 V, VGS = 0 VDS = –10 V, I D = –1 mA ID = –20 A, VGS = –10 V Note3 ID = –20 A, VGS = –4.5 V Note3 ID = –20 A, VDS = –10 V Note3 VDS = –10 V, VGS = 0, f = 1 MHz VDD = –10 V, VGS = –10 V, ID = –40 A VGS = –10 V, ID = -20 A, VDD ≅ –10 V, RL = 0.5 Ω, Rg = 4.7 Ω IF = –40 A, VGS = 0 Note3 IF = –40 A, VGS = 0 diF/ dt = 100 A/ µs HAT1127H Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating –500 Drain Current ID (A) 30 20 10 10 –10 –1 Operation in this area is limited by RDS(on) –0.1 Ta = 25°C 1 shot Pulse 0 50 100 150 Case Temperature –10 V –0.01 –0.1 –0.3 200 –1 –3 –100 Typical Transfer Characteristics –50 –2.9 V –2.8 V –3.0 V –2.6 V –30 VDS = –10 V Pulse Test –2.7 V –2.5 V –20 VGS = –2.4 V –10 –40 –30 –20 Tc = 75°C 25°C –10 –25°C Pulse Test –2 –4 –6 –8 0 –10 –1 –2 –3 –4 –5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current –0.20 Pulse Test –0.16 –0.12 ID = –20 A –0.08 –10 A –0.04 –5 A 0 –4 –8 –12 –16 –20 Gate to Source Voltage VGS (V) Rev.5.00 Jan 20, 2006 page 3 of 6 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (V) –30 –4.5 V –40 0 –10 Drain to Source Voltage VDS (V) Tc (°C) Typical Output Characteristics –50 Drain Current ID (A) 10 0 µ µs 1m s PW s DC = 10 m Op era s tio n –100 Drain Current ID (A) Channel Dissipation Pch (W) 40 100 Pulse Test 50 20 10 VGS = –4.5 V 5 –10 V 2 1 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT1127H 20 Pulse Test 16 12 ID = –5 A, –10 A, –20 A 8 VGS = –4.5 V 4 –5 A, –10 A, –20 A –10 V 0 –40 0 40 80 120 Case Temperature Tc 160 200 100 Tc = –25°C 75°C 10 3 1 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 200 100 50 –10 –30 VDS –8 –12 VGS –40 –16 ID = –40 A –50 0 40 80 120 160 Gate Charge Qg (nc) Rev.5.00 Jan 20, 2006 page 4 of 6 VGS = 0 f = 1 MHz –10 –20 –30 –40 –50 –20 200 Switching Characteristics 200 Switching Time t (ns) –4 VDD = –25 V –10 V –5 V Crss 300 500 0 VDD = –5 V –10 V –25 V Coss 1000 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 0 –30 –100 Ciss 30 0 –100 Dynamic Input Characteristics –20 –30 3000 Reverse Drain Current IDR (A) –10 –10 100 di/dt = –100 A/µs VGS = 0, Ta = 25°C –3 –3 Typical Capacitance vs. Drain to Source Voltage 30000 –1 –1 Drain Current ID (A) (°C) 1000 10 –0.1 –0.3 VDS = –10 V Pulse Test 0.2 –0.1 –0.3 Body–Drain Diode Reverse Recovery Time 20 25°C 30 td(off) 100 tf 50 tr 20 10 td(on) VGS = –10 V, VDS = –10 V Rg = 4.7 Ω, duty ≤ 1 % 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 Drain Current ID (A) –50 HAT1127H Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) –50 –40 –10 V –5 V VGS = 0 –30 –20 –10 Pulse Test 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch - f(t) = γs (t) x θch - f θch - f = 4.17°C/W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 1 0.0 e uls PW T PW T p ot sh 0.01 10 µ D= 1 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor Rg 10% D.U.T. 90% RL 90% 90% Vin –10 V VDD = –10 V Vout td(on) Rev.5.00 Jan 20, 2006 page 5 of 6 10% 10% tr td(off) tf HAT1127H Package Dimensions JEITA Package Code SC-100 Previous Code LFPAKV RENESAS Code PTZZ0005DA-A MASS[Typ.] 0.080g 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 +0.05 0.20 –0.03 +0.25 1 0° – 8° 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 Unit: mm 0.6 –0.20 1.3 Max Package Name LFPAK 0.75 Max 1.27 0.10 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT1127H-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Jan 20, 2006 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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