DC COMPONENTS CO., LTD. 2N7002 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Gate 2 = Source 3 = Drain 3 .108(2.80) .083(2.10) .063(1.60) .047(1.20) 1 o Absolute Maximum Ratings(TA=25 Characteristic C) Symbol Rating Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS=1MW) VDGR 60 V Gate-Source Voltage (Continuous) VGS o (1) Drain Current (Continuous, TC=25 C) 20 115 mA IDM 800 mA Total Power Dissipation o Derate above 25 C PD 225 1.8 mW o mW/ C Operating Junction Temperature TJ -55 to+150 (2) Storage Temperature Maximum Lead Temperature, for 10 Seconds Solding Purpose TSTG -55 to+150 TL 260 .091(2.30) .067(1.70) .045(1.15) .034(0.85) V ID Drain Current (Pulsed) 2 .120(3.00) .110(2.80) .0071(0.18) .0035(0.09) .051(1.30) .035(0.90) o .026(0.65) .010(0.25) C o C o C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) Electrical oCharacteristics (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Drain-Source Breakdown Voltage Symbol Min Typ Max Unit V(BR)DSS 60 - - V Test Conditions ID=10mA, VGS=0 Zero Gate Voltage Drain Current IDSS - - 1 mA VDS=60V, VGS=0 Gate-Sourse Forward Leakage Current IGSSF - - 100 nA VGSF=20V, VDS=0 Gate-Sourse Reverse Leakage Current (2) Gate Threshold Voltage (2) On-State Drain Current (2) Static Drain-Source On-State Voltage Static Drain-Source On-State Resistance (2) (2) Forward Transconductance IGSSR - - -100 nA VGSR=-20V, VDS=0 VGS(th) 1 - 2.5 V VDS=VGS, ID=0.25mA ID(on) 500 - - mA VDS(on)1 - - 1.5 V VDS>2VDS(on), VGS=10V ID=50mA, VGS=5V VDS(on)2 - - 3.75 V ID=500mA, VGS=10V RDS(on)1 - - 7.5 W ID=50mA, VGS=5V RDS(on)2 - - 7.5 W gFS 80 - - mS Input Capacitance Ciss - - 50 pF Output Capacitance Coss - - 25 pF Reverse Transfer Capacitance Crss - - 5 pF Thermal Resistance, Junction to Ambient RqJA - - 417 (1)The Power Dissipation of the package may result in a lower continuous drain current. (2)Pulse Test: Pulse Width 300ms, Duty Cycle 2% o C/W ID=500mA, VGS=10V VDS>2VDS(on), ID=200mA VDS=25V, VGS=0, f=1MHZ - Rating and Characteristic Curves of 2N7002 Fig1. Ohmic Region Fig2. Transfer Characteristics 1.0 2.0 VDS=10V TA=25ºC VGS=10V 1.6 1.4 9V 1.2 8V ID Drain-Source Current (A) ID Drain-Source Current (A) 1.8 1.0 7V 0.8 0.6 6V 0.4 5V 0.2 4V 25ºC 125ºC 0.6 0.4 0.2 3V 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0.0 10 1.0 2.0 Fig3. Temperature versus Static Drain–Source On–Resistance 4.0 5.0 6.0 7.0 8.0 9.0 10 Fig4. Temperature versus Gate Threshold Voltage 1.2 2.2 1.15 VGS(th), Normalized threshold voltage 2.4 ID=200 mA VGS=10V 2.0 3.0 VGS, Gate-Source Voltage (V) VDS, Drain-Source Voltage (V) RDS(on), Normalized On-Resistance -55ºC 0.8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID=1.0 mA VGS=VDS 1.1 1.05 1.0 0.95 0.9 0.85 0.8 0.75 0.7 0.4 -60 -20 +20 +60 +100 +140 -60 -20 Tj, Junction Temperature (ºC) DC COMPONENTS CO., LTD. R +20 +60 Tj, Junction Temperature (ºC) +100 +140