RENESAS HM628512CLTTI-7

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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circuit application examples contained in these materials.
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contained therein.
HM628512CI Series
Wide Temperature Range Version
4 M SRAM (512-kword × 8-bit)
ADE-203-1211C (Z)
Rev. 3.0
Dec. 18, 2002
Description
The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The HM628512CI Series offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin
DIP.
Features
• Single 5 V supply
• Access time: 55/70 ns (max)
• Power dissipation
 Active: 10 mW/MHz (typ)
 Standby: 4 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature: –40 to +85˚C
HM628512CI Series
Ordering Information
Type No.
Access time
Package
HM628512CLPI-7
70 ns
600-mil 32-pin plastic DIP (DP-32)
HM628512CLFPI-5
HM628512CLFPI-7
55 ns
70 ns
525-mil 32-pin plastic SOP (FP-32D)
HM628512CLTTI-5
HM628512CLTTI-7
55 ns
70 ns
400-mil 32-pin plastic TSOP II (TTP-32D)
HM628512CLRRI-7
70 ns
400-mil 32-pin plastic TSOP II reverse (TTP-32DR)
2
HM628512CI Series
Pin Arrangement
32-pin DIP
32-pin SOP
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-pin TSOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
(Top view)
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
(Top view)
32-pin TSOP (reverse)
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
(Top view)
Pin Description
Pin name
Function
A0 to A18
Address input
I/O0 to I/O7
Data input/output
CS
Chip select
OE
Output enable
WE
Write enable
VCC
Power supply
VSS
Ground
3
HM628512CI Series
Block Diagram
LSB
MSB
A11
A9
A8
A15
A18
A10
A13
A17
A16
A14
A12
V CC
V SS
Row
Decoder
I/O0
•
•
•
•
•
Memory Matrix
2,048 × 2,048
•
•
Column I/O
Input
Data
Control
Column Decoder
I/O7
LSB A3 A2A1A0 A4 A5 A6 A7 MSB
••
CS
WE
OE
4
Timing Pulse Generator
Read/Write Control
•
•
HM628512CI Series
Function Table
WE
CS
OE
Mode
VCC current
Dout pin
Ref. cycle
×
H
×
Not selected
I SB , I SB1
High-Z
—
H
L
H
Output disable
I CC
High-Z
—
H
L
L
Read
I CC
Dout
Read cycle
L
L
H
Write
I CC
Din
Write cycle (1)
L
L
L
Write
I CC
Din
Write cycle (2)
Note: ×: H or L
Absolute Maximum Ratings
Parameter
Symbol
Value
Power supply voltage
VCC
–0.5 to +7.0
1
Unit
V
2
Voltage on any pin relative to V SS
VT
–0.5* to V CC + 0.3*
V
Power dissipation
PT
1.0
W
Operating temperature
Topr
–40 to +85
°C
Storage temperature
Tstg
–55 to +125
°C
Storage temperature under bias
Tbias
–40 to +85
°C
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is 7.0 V.
Recommended DC Operating Conditions (Ta = –40 to +85°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
VSS
0
0
0
V
VIH
2.4
—
VCC + 0.3
V
—
0.6
V
Input high voltage
Input low voltage
Note:
VIL
–0.3
*1
1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
5
HM628512CI Series
DC Characteristics
Parameter
Symbol
Min
Typ*1 Max
Unit
Test conditions
Input leakage current
|ILI|
—
—
1
µA
Vin = VSS to V CC
Output leakage current
|ILO |
—
—
1
µA
CS = VIH or OE = VIH or
WE = VIL, VI/O = VSS to V CC
Operating power supply current: DC
I CC
—
1.5
3
mA
CS = VIL,
others = VIH/VIL, I I/O = 0 mA
Operating power
supply current
HM628512CI-5
I CC1
—
8
25
mA
Min cycle, duty = 100%
CS = VIL, others = VIH/VIL
I I/O = 0 mA
HM628512CI-7
I CC1
—
7
25
mA
Operating power supply current
I CC2
—
2
5
mA
Cycle time = 1 µs,
duty = 100%
I I/O = 0 mA, CS ≤ 0.2 V
VIH ≥ V CC – 0.2 V, VIL ≤ 0.2 V
Standby power supply current: DC
I SB
—
0.1
mA
CS = VIH
µA
Vin ≥ 0 V, CS ≥ V CC – 0.2 V
0.5
2
2
Standby power supply current (1): DC I SB1
—
0.8*
20*
Output low voltage
VOL
—
—
0.4
V
I OL = 2.1 mA
Output high voltage
VOH
2.4
—
—
V
I OH = –1.0 mA
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading, and not guaranteed.
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
1
Input capacitance*
Input/output capacitance*
Note:
6
1
Symbol
Typ
Max
Unit
Test conditions
Cin
—
8
pF
Vin = 0 V
pF
VI/O = 0 V
CI/O
—
10*
1. This parameter is sampled and not 100% tested.
2. CI/O max = 12 pF only for HM628512CLPI Series.
2
HM628512CI Series
AC Characteristics (Ta = –40 to +85°C, VCC = 5 V ± 10%, unless otherwise noted.)
Test Conditions
•
•
•
•
Input pulse levels: 0.4 V to 2.4 V
Input rise and fall time: 5 ns
Input and output timing reference levels: 1.5 V
Output load: 1 TTL Gate + C L (50 pF) (HM628512CI-5)
1 TTL Gate + C L (100 pF) (HM628512CI-7)
(Including scope and jig)
Read Cycle
HM628512CI
-5
-7
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read cycle time
t RC
55
—
70
—
ns
Address access time
t AA
—
55
—
70
ns
Chip select access time
t CO
—
55
—
70
ns
Output enable to output valid
t OE
—
25
—
35
ns
Chip selection to output in low-Z
t LZ
10
—
10
—
ns
2
Output enable to output in low-Z
t OLZ
5
—
5
—
ns
2
Chip deselection to output in high-Z
t HZ
0
20
0
25
ns
1, 2
Output disable to output in high-Z
t OHZ
0
20
0
25
ns
1, 2
Output hold from address change
t OH
10
—
10
—
ns
7
HM628512CI Series
Write Cycle
HM628512CI
-5
-7
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
t WC
55
—
70
—
ns
Chip selection to end of write
t CW
50
—
60
—
ns
4
Address setup time
t AS
0
—
0
—
ns
5
Address valid to end of write
t AW
50
—
60
—
ns
Write pulse width
t WP
40
—
50
—
ns
3, 12
Write recovery time
t WR
0
—
0
—
ns
6
WE to output in high-Z
t WHZ
0
20
0
25
ns
1, 2, 7
Data to write time overlap
t DW
25
—
30
—
ns
Data hold from write time
t DH
0
—
0
—
ns
Output active from output in high-Z
t OW
5
—
5
—
ns
2
Output disable to output in high-Z
t OHZ
0
20
0
25
ns
1, 2, 7
Notes: 1. t HZ , t OHZ and t WHZ are defined as the time at which the outputs achieve the open circuit conditions and
are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. A write occurs during the overlap (tWP) of a low CS and a low WE. A write begins at the later
transition of CS going low or WE going low. A write ends at the earlier transition of CS going high
or WE going high. tWP is measured from the beginning of write to the end of write.
4. t CW is measured from CS going low to the end of write.
5. t AS is measured from the address valid to the beginning of write.
6. t WR is measured from the earlier of WE or CS going high to the end of write cycle.
7. During this period, I/O pins are in the output state so that the input signals of the opposite phase to
the outputs must not be applied.
8. If the CS low transition occurs simultaneously with the WE low transition or after the WE transition,
the output remain in a high impedance state.
9. Dout is the same phase of the write data of this write cycle.
10. Dout is the read data of next address.
11. If CS is low during this period, I/O pins are in the output state. Therefore, the input signals of the
opposite phase to the outputs must not be applied to them.
12. In the write cycle with OE low fixed, tWP must satisfy the following equation to avoid a problem of
data bus contention. t WP ≥ tDW min + tWHZ max
8
HM628512CI Series
Timing Waveforms
Read Timing Waveform (WE = VIH)
tRC
Address
tAA
tCO
CS
tLZ
tHZ
tOE
tOLZ
OE
tOHZ
Dout
Valid Data
tOH
9
HM628512CI Series
Write Timing Waveform (1) (OE Clock)
tWC
Address
tAW
tWR
OE
tCW
CS
*8
tWP
tAS
WE
tOHZ
Dout
tDW
Din
10
Valid Data
tDH
HM628512CI Series
Write Timing Waveform (2) (OE Low Fixed)
tWC
Address
tCW
tWR
CS
*8
tAW
tWP
WE
tOH
tAS
tOW
tWHZ
*9
*10
Dout
tDW
tDH
*11
Din
Valid Data
11
HM628512CI Series
Low VCC Data Retention Characteristics (Ta = –40 to +85°C)
Parameter
Symbol
Min
Typ
VCC for data retention
VDR
2
—
Data retention current
I CCDR
—
Chip deselect to data retention time
t CDR
0
Operation recovery time
tR
t RC*
0.8*
4
3
Max
Unit
Test conditions*2
—
V
CS ≥ V CC – 0.2 V, Vin ≥ 0 V
µA
VCC = 3.0 V, Vin ≥ 0 V
CS ≥ V CC – 0.2 V
See retention waveform
20*
1
—
—
ns
—
—
ns
Notes: 1. 10 µA (max) at Ta = –40 to +40°C.
2. CS controls address buffer, WE buffer, OE buffer, and Din buffer. In data retention mode, Vin
levels (address, WE, OE, I/O) can be in the high impedance state.
3. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
4. t RC = read cycle time.
Low V CC Data Retention Timing Waveform (CS Controlled)
tCDR
Data retention mode
VCC
4.5 V
2.4 V
VDR
CS
0V
12
CS ≥ VCC – 0.2 V
tR
HM628512CI Series
Package Dimensions
HM628512CLPI Series (DP-32)
As of July, 2002
Unit: mm
41.90
42.50 Max
17
13.4
13.7 Max
32
16
5.08 Max
1.20
2.30 Max
2.54 ± 0.25
0.48 ± 0.10
0.51 Min
2.54 Min
1
15.24
+ 0.11
0.25 – 0.05
0˚ – 15˚
Hitachi Code
JEDEC
JEITA
Mass (reference value)
DP-32
—
Conforms
5.1 g
13
HM628512CI Series
Package Dimensions (cont.)
HM628512CLFPI Series (FP-32D)
As of July, 2002
20.45
Unit: mm
20.95 Max
17
11.30
32
1
1.27
*0.40 ± 0.08
0.38 ± 0.06
0.10
0.15 M
*Dimension including the plating thickness
Base material dimension
14
0.12
0.15 +– 0.10
1.00 Max
*0.22 ± 0.05
0.20 ± 0.04
3.00 Max
16
14.14 ± 0.30
1.42
0˚ – 8˚
0.80 ± 0.20
Hitachi Code
JEDEC
JEITA
Mass (reference value)
FP-32D
Conforms
—
1.3 g
HM628512CI Series
Package Dimensions (cont.)
HM628512CLTTI Series (TTP-32D)
As of July, 2002
Unit: mm
20.95
21.35 Max
17
10.16
32
1.27
*0.42 ± 0.08
0.40 ± 0.06
0.21
16
M
0.80
11.76 ± 0.20
0.10
*Dimension including the plating thickness
Base material dimension
*0.17 ± 0.05
0.125 ± 0.04
1.20 Max
1.15 Max
0.13 ± 0.05
1
0˚ – 5˚ 0.50 ± 0.10
Hitachi Code
JEDEC
JEITA
Mass (reference value)
TTP-32D
Conforms
—
0.51 g
15
HM628512CI Series
Package Dimensions (cont.)
HM628512CLRRI Series (TTP-32DR)
As of July, 2002
Unit: mm
20.95
21.35 Max
16
10.16
1
1.27
*0.42 ± 0.08
0.40 ± 0.06
0.21
17
M
0.80
11.76 ± 0.20
0.10
*Dimension including the plating thickness
Base material dimension
16
*0.17 ± 0.05
0.125 ± 0.04
1.20 Max
1.15 Max
0.13 ± 0.05
32
0˚ – 5˚ 0.50 ± 0.10
Hitachi Code
JEDEC
JEITA
Mass (reference value)
TTP-32DR
Conforms
—
0.51 g
HM628512CI Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual
property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of
bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,
safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the
guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or
failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the
equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage
due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic Components Group
Dornacher Str 3
D-85622 Feldkirchen
Postfach 201,D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
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Tel : <65>-6538-6533/6538-8577
Fax : <65>-6538-6933/6538-3877
URL : http://semiconductor.hitachi.com.sg
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(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://semiconductor.hitachi.com.tw
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7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon Hong Kong
Tel : <852>-2735-9218
Fax : <852>-2730-0281
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Copyright C Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
17