RENESAS 2SC3355

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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC3355
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
FEATURES
• Low noise and high gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
• High power gain : MAG = 11 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC3355
500 pcs (Non reel)
• 18 mm wide radial taping
2SC3355-T
2.5 kpcs/box (Box type)
• Supplying paper tape with in a box
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 500 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
IC
100
mA
Ptot
600
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Collector Current
Total Power Dissipation
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10208EJ01V0DS (1st edition)
(Previous No. P10355EJ3V1DS00)
Date Published April 2003 CP(K)
Printed in Japan
The mark • shows major revised points.
 NEC Compound Semiconductor Devices 1985, 2003
2SC3355
ELECTRICAL CHARACTERISTICS (TA = +25°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
–
–
1.0
µA
Emitter Cut-off Current
IEBO
VEB = 1.0 V, IC = 0 mA
–
–
1.0
µA
VCE = 10 V, IC = 20 mA
50
120
300
–
VCE = 10 V, IC = 20 mA
–
6.5
–
GHz
S21e
VCE = 10 V, IC = 20 mA, f = 1 GHz
–
9.5
–
dB
Noise Figure (1)
NF
VCE = 10 V, IC = 7 mA, f = 1 GHz
–
1.1
–
dB
Noise Figure (2)
NF
VCE = 10 V, IC = 40 mA, f = 1 GHz
–
1.8
3.0
dB
VCB = 10 V, IE = 0 mA, f = 1 MHz
–
0.65
1.0
pF
hFE
DC Current Gain
Note 1
RF Characteristics
Gain Bandwidth Product
fT
2
Insertion Power Gain
Cob
Output Capacitance
Note 2
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
2
Rank
K
Marking
K
hFE Value
50 to 300
Data Sheet PU10208EJ01V0DS
2SC3355
TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
19 mm
1 000
With heat sink
7.8 mm
750
10 mm
Heat sink
(Aluminum)
3.8 mm
Total Power Dissipation Ptot (mW)
1 250
500
Free air
250
0
25
50
75
100
125
Reverse Transfer Capacitance Cre (pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
150
1
0.5
0.3
0.2
0.5
1
2
5
10
20 30
Collector to Base Voltage VCB (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
Gain Bandwidth Product fT (GHz)
VCE = 10 V
100
50
20
10
0.5
1
5
10
VCE = 10 V
5
2
1
0.5
0.2
0.1
0.1
50
0.5
1
5
10
50 100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
25
15
Insertion Power Gain |S21e|2 (dB)
DC Current Gain hFE
f = 1 MHz
Ambient Temperature TA (˚C)
200
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
2
MAG
20
|S21e|2
15
10
5
VCE = 10 V
IC = 20 mA
0
0.05
0.1
0.2
0.5
1
VCE = 10 V
f = 1 GHz
10
2
Frequency f (GHz)
5
0
0.5
1
5
10
50 70
Collector Current IC (mA)
Data Sheet PU10208EJ01V0DS
3
NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
f = 1 GHz
Noise Figure NF (dB)
6
5
4
3
2
1
0
0.5
1
5
10
50 70
3rd Order Intermodulation Distortion IM3 (dB)
2nd Order Intermodulation Distortion IM2 (dB)
2SC3355
IM3, IM2 vs. COLLECTOR CURRENT
–100
VCE = 10 V
Vo = 100 dBµV/50 Ω
Rg = Re = 50 Ω
IM2 : f = 90 + 100 MHz
IM3 : f = 2 × 200 – 190 MHz
–90
–80
IM3
–70
–60
IM2
–50
–40
–30
Collector Current IC (mA)
20
30
40
50
60
70
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10208EJ01V0DS
2SC3355
SMITH CHART
S11e, S22e-FREQUENCY
1.4
1.2
0.9
1.6
0.6
0.
18
32
1.8
0.
50
2.0
5
0.
T
EN
0.4
4
0.
0
3.
30
C
0.6
O
0.8
6.0
0
1.
S11e
2.0 GHz
0.24
0.23
0.26
2
0.2
0.27
8
10
0.2
20
4.0
0
1.
1
0.2
9
0.2
( –Z–+–J–XTANCE CO
) MPO
N
0.1
0.3 7
3
0
0.2 0
0.3
0.8
0.2
0.6
10
0.1
0.4
20
10
5.0
4.0
3.0
1.8
2.0
1.6
1.4
1.2
0.9
1.0
0.7
0.8
0.6
0.5
0.4
50
0
0.3
20
REACTANCE COMPONENT
R
––––
0.2
ZO
IC = 40 mA
0.2 GHz
0.4
0.2 GHz
IC = 20 mA
0
1.
5.0
)
1.0
0.8
(
30
0
0.6
E
IV
AT
3.
0
−4
4
NE
G
0.
0.4
5
0.
0. 31
19
2.0
1.8
1.6
1.4
0.35
0.15
−70
1.2
4
0.3
6
0.1
0.36
0.14
−80
1.0
0
0.8
3
0.3 7
0.2
−6
0.9
0.1
0.38
0.39
0.12
0.11
−100
−90
0.37
0.13
0
−11
0.40
0.10
0.4
0.0 2
8
0
−1
2
0.4
1
0.0
9
0.
4
0. 3
07
30
−1
0.6
32
18
0.
0.
0
0.7
−5
0.
0.3
0.2 0
0
E
NC
TA X
AC −J––O–
RE
–Z
S22e
4.0
2.0 GHz
0.26
0.24
8
0.
0.27
0.2
0
.2
8
3
0
0.2
.2
2
9
−20
0.2
1
−
0.6
0.2
−10
10
)
50
(
0.25
0.25
0.2
IC = 40 mA
0.2
IC = 20 mA
20
0.3
WAVELE
600
40
NGTH
0
S
0.01
0.49
0.02 TOWARD
0.48
0
0.49
0.0 GENE
0.01
7
0.48
3
RA
0.4
0.0W2ARD LOADLECTION COEF
FCIENT
0.4
0.0TOR
3 HS TO LE OF REF
6
I
7
N
.0
DEG
0NGT ANG
4
0.4
R
0
E
E
0.4
ES
6
L
0
.0W4AVE −1
0.0
6
0
5
15
0
0.4 5
0.4 5
0
15
0
−
.
5
0
0.
4
0
4
POS
T
0.1
14 0.4 6
0. 06
ITIV
NEN
40
0
ER
4
PO
M
0. −1
E
A
CO
0.1
6
0.3
4
70
0.2
0.1
0.3
0.15
0.35
19
0. 31
0.
07
0. 3
4
0. 0
13
0.14
0.36
80
90
0.7
8
0.0 2
0.4 20
1
0.13
0.37
0.12
0.38
0.11
0.39
100
0.10
0.40
110
0.8
9
0.0
1
0.4
1.0
CONDITION : VCE = 10 V
S21e-FREQUENCY
S12e-FREQUENCY
CONDITION : VCE = 10 V, IC = 40 mA
CONDITION : VCE = 10 V, IC = 40 mA
90˚
120˚
90˚
120˚
60˚
0.2 GHz
30˚
150˚
60˚
150˚
S21e
2.0 GHz
2.0 GHz
180˚
4
8
12
–150˚
16 20
–60˚
0.2 GHz
0˚ 180˚
–30˚
–120˚
30˚
S12e
0.1
0.2
0.3
–150˚
0.4 0.5
0˚
–30˚
–60˚
–120˚
–90˚
–90˚
Data Sheet PU10208EJ01V0DS
5
2SC3355
PACKAGE DIMENSIONS
TO-92 (UNIT: mm)
5.5 MAX.
5.2 MAX.
12.7 MIN.
0.5
2.54
2
3
4.2 MAX.
1
1.77 MAX.
1.27
PIN CONNECTIONS
1. Base
2. Emitter
3. Collector
6
EIAJ : SC-43B
JEDEC : TO-92
IEC
: PA33
Data Sheet PU10208EJ01V0DS
2SC3355
• The information in this document is current as of April, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
Data Sheet PU10208EJ01V0DS
7
2SC3355
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: [email protected]
NEC Compound Semiconductor Devices Hong Kong Limited
FAX: +852-3107-7309 E-mail: [email protected]
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TEL: +852-3107-7303
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TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
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http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
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http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302-1