2SK3158 Silicon N Channel MOS FET High Speed Power Switching REJ03G1083-0400 (Previous: ADE-208-757B) Target Specification Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.4.00 Sep 07, 2005 page 1 of 3 2 3 S 2SK3158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID Ratings 150 ±20 30 120 30 30 67 100 150 –55 to +150 ID(pulse)Note1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 3 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 150 ±20 — — 1.0 — — 18 — — — — — — — — — Typ — — — — — 40 45 30 2600 820 350 25 180 600 280 0.91 110 Max — — ±10 10 2.5 45 63 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 150 V, VGS = 0 ID = 1 mA, VDS = 10V ID = 15 A, VGS = 10V Note 4 ID = 15 A, VGS = 4V Note 4 ID = 15 A, VDS = 10V Note 4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 15 A, VGS = 10 V, RL = 2 Ω IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/ dt = 50 A/ µs 2SK3158 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 φ 3.6 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 +0.1 –0.08 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK3158-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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