RENESAS 2SC2613

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April 1, 2003
Cautions
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2SC2613
Silicon NPN Triple Diffused
ADE-208-886 (Z)
1st. Edition
September 2000
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1
1. Base
2. Collector
(Flange)
3. Emitter
2 3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
5
A
Collector peak current
I C(peak)
10
A
Base current
IB
2.5
A
40
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
2SC2613
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
VCEO(sus)
400
—
—
V
I C = 0.2 A, RBE = ∞,
L = 100 mH
VCEX(sus)
400
—
—
V
I C = 5 A, IB1 = –IB2 = 1 A
VBE = –5 V, L = 180 µH,
Clamped
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 10 mA, IC = 0
Collector cutoff current
I CBO
—
—
100
µA
VCB = 400 V, IE = 0
I CEO
—
—
100
µA
VCE = 350 V, RBE = ∞
hFE1
15
—
—
VCE = 5 V, IC = 2.5 A*1
hFE2
7
—
—
VCE = 5 V, IC = 5 A*1
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.0
V
I C = 2.5 A, IB = 0.5 A*1
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
V
I C = 2.5 A, IB = 0.5 A*1
Turn on time
t on
—
—
1.0
µs
I C = 5 A, IB1 = –IB2 = 1 A,
Storage time
t stg
—
1.2
2.5
µs
VCC ≅ 150 V
Fall time
tf
—
—
1.0
µs
DC current transfer ratio
1. Pulse test.
Maximum Collector Dissipation Curve
Area of Safe Operation
Collector Current IC (A)
100
40
20
iC (peak)
10
IC (max)
(Continuous)
1.0
0.1
Ta = 25°C, 1 Shot
0.01
0
2
50
100
Case Temperature TC (°C)
150
µs
25
s
s
0µ
m
s
25
0
m
1 =1
ion
at
PW
er C)
Op 25°
DC =
(T C
Collector power dissipation Pc (W)
60
50 µs
Note:
1
3
10
30
100 300 1,000
Collector to emitter Voltage VCE (V)
2SC2613
Transient Thermal Resistance
10
Thermal resistance θj-c (°C/W)
Collector Current Derating Rate
Collector Current derating rate (%)
100
IS
/B
80
Lim
it A
re
a
60
40
20
0
50
100
Case temperature TC (°C)
3
s–10
10 m
1.0
0.3
0.03
6
400 V, 5 A
4
2
IB2 = –1.0 A
450 V, 1.0 A
0
0
100
200
300
400
500
Collector to emitter Voltage VCE (V)
TC = 25°C
0.01
0.01
0.1
0.01
0.1
1.0
10 (s)
1.0
10 (ms)
Time t
Collector to Emitter Voltage
vs. Base to Emitter Resistance
Collector to emitter voltage VCER (V)
Collector Current IC (A)
8
ms
1
150
325 V, 10 A
10
s–
0µ
0.1
Reverse Bias Area of Safe Operation
10
s
600
IC = 1 mA
500
400
300
100
1k
10 k
100 k
1M
Base to emitter resistance RBE (Ω)
3
2SC2613
Typical Transfer Characteristics
Typical Output Characteristics
5
0.5
0.4
4
Collector Current IC (A)
Collector Current IC (A)
5
0.3
0.2
3
0.1
2
0.05 A
1
TC = 25°C
TC = 25°C
VCE = 5 V
4
3
2
1
IB = 0
0
1
2
3
4
5
Collector to emitter Voltage VCE (V)
0
0.4
0.8
1.2
1.6
2.0
Base to emitter voltage VBE (V)
Collector to Emitter Saturation
Voltage vs. Base Current
DC current transfer ratio hFE
100
75°C
30
25°C
°C
T C = –25
10
3
VCE = 5 V
1
0.01 0.03 0.1 0.3
1.0
3
10
Collector current IC (A)
4
Collector to emitter saturation voltage
VCE (sat)
DC Current Transfer Ratio vs.
Collector Current
10
3
2A
1.0
0.3
1A
0.1
0.03
0.01
0.01 0.03
IC = 0.5 A
TC = 25°C
0.1 0.3
1.0
3
Base current IB (A)
10
2SC2613
Base to Emitter Saturation Voltage
vs. Collector Current
Switching Time vs. Collector Current
10
3
3
Switching time t (µs)
IC = 5 IB
TC = 25°C
1.0
0.3
0.1
tstg
1.0
tf
0.3
ton
0.1
0.03
0.03
0.01
0.01 0.03 0.1 0.3
1.0
3
Collector current IC (A)
IC = 5 IB1 = –5 IB2
.
VCC =. 150 V
0.01
0.01 0.03 0.1 0.3
1.0
3
Collector current IC (A)
10
10
Switching Time vs. Case Temperature
5
Switching time t (µs)
Base to emitter saturation voltage
VBE (sat)
10
2
tstg
1.0
tf
0.5
ton
0.2
IC = 5 A
IB1 = –IB2 =1 A
RL = 30 Ω
.
VCC =. 150 V
0.1
0.05
0
25
50
75
100
Case temperature TC (°C)
125
5
2SC2613
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
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performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
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Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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6
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