(CP606)JZD650 HIGH VOLTAGE RECTIFIER CHIPS 1. FEATURE (1) SIPOS and Glass passivation structure (2) High voltage (1600V) (3) Suitable for wire bond assembly 2. Die Size (1) 6.5mm×6.5mm 3. Application (1) Rectifier power supply (2) Other application for rectifier 4. Maximum Rating Items Repetitive Peak Reverse Voltage Non Repetitive Peak Revers Voltage Average Forward Current Peak Surge Forward Current Value For Fusing Operating Junction Temperature Symbol VRRM VRSM IF(AV) IFSM I2 t Tj K A Ta=25℃, Unless otherwise specified Condition Unit V Assembled for TO-247 Package V Assembled for TO-247 Package A Tj = 150 °C,Assembled for TO-247 Package A Tj = 150 °C,50HZ, Assembled for TO-247(W/B) A2s Tj = 150 °C, tp=10 ms, sin 180° Value 1600 1700 50 600 1800 -40～150 ℃ 5. Out-going Inspection Items Reverse Current Forward Voltage Visual Inspection Symbol Unit IR VF mA V Standard Value Condition VR=1600V Min Ave Max Tj=25℃ － － 0.1 Tj=150℃ － － 2 － － 1.5 － － 0.95 － － 1.1 － － IF=50A, Assembled by TO-247 IF=5A,CP Test (1) Glass Crack (2) Bristletail and dirty level of metal layer surface Inspection Numbers Extraction All Numbers A U V Name of Part Explanation Symbol Unit Size Die Size U mm 6.5±0.05 Outer size of the Moat V mm 6.36±0.05 Inner size of the Moat W mm 5.48±0.1 Metallization area X mm 5.36±0.1 Wafer Thickness Y μm 300±10 Depth of the Moat Z μm 115±20 Thickness of the Front μm 6~8 Al(top) metal layer Rear μm 1.7~2.3 Ti-Ni-Ag X W 6. Die Structure Z Y K Qidong JieJie Micro-electronic Co., Ltd. http://www.jiejie-cn.com 1/1