Datasheet

JIEJIE MICROELECTRONICS CO. , Ltd
JX011 Series Sensitive gate SCRs
Rev.4.0
DESCRIPTION:
The JX011 SCR series provide high dv/dt rate
with strong resistance to electromagnetic
interface. They are especially recommended for
use on residual current circuit breaker, straight
hair, igniter etc.
1
23
13
2
SOT-223
TO-92
K(1)
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
1
A
IGT
≤200
μA
VTM
≤1.7
V
G(3)
A(2)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-110
℃
Repetitive peak off-state voltage
VDRM
800
V
Repetitive peak reverse voltage
VRRM
800
V
IT(RMS)
1
A
ITSM
12
A
I2t
0.72
A2s
Critical rate of rise of on-state current
dI/dt
50
A/μs
Peak gate current (tp=20μs, Tj=110℃)
IGM
0.3
A
Peak gate power (tp=20μs, Tj=110℃)
PGM
0.5
W
PG(AV)
0.1
W
Storage junction temperature range
Operating junction temperature range
RMS on-state current
TO-92 (TC=50℃)
SOT-223 (TC=75℃)
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Average gate power dissipation(Tj=110℃)
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JX011 Series
JieJie Microelectronics CO. , Ltd
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
IGT
VGT
VGD
Test Condition
Unit
MIN.
TYP.
MAX.
-
-
200
μA
-
0.6
0.8
V
0.2
-
-
V
VD=12V RL=33Ω
VD=VDRM Tj=110℃
IL
IG=1.2 IGT
-
-
5
mA
IH
IT=0.05A
-
-
3
mA
50
100
-
V/μs
Value(MAX)
Unit
Tj=25℃
1.7
V
Tj=25℃
5
μA
Tj=110℃
100
μA
Value
Unit
dV/dt
VD=2/3VDRM Tj=110℃ RGK=1KΩ
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
IT=2A tp=380μs
VD=VDRM VR=VRRM
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
TO-92
70
SOT-223
60
junction to case
℃/W
ORDERING INFORMATION
J X 011 U
U:TO-92 V:SOT-223
JieJie Microelectronics Co.,Ltd
Sensitive gate SCRs
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IT(RMS):1A
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JX011 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
N
N
C
Dimensions
Ref.
F
V
A
M
ax
m
5m
1.
H
B
Φ
K
P
E
Millimeters
Typ.
Min.
J
D
G
TO-92
FIG.1 Maximum power dissipation versus RMS
on-state current
Inches
Max.
Min.
Typ.
Max.
A
4.45
5.20
0.175
B
4.32
5.33
0.170
0.205
0.210
C
3.18
4.19
0.125
0.165
D
0.407
0.533
0.016
0.021
E
0.60
0.80
0.024
0.031
F
-
1.1
-
-
0.043
-
G
-
1.27
-
-
0.050
-
H
-
2.30
-
-
0.091
J
0.36
0.50
0.014
0.020
K
12.70
15.0
0.500
0.591
N
2.04
2.66
0.080
0.105
P
1.86
2.06
0.073
0.081
V
-
4.3
-
0.169
-
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
1.5
P(w)
1.5
α=180°
1.0
1.0
0.5
0.5
0
0
0.2
IT(RMS) (A)
0.4
0.6
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0.8
1.0
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SOT-223
TO-92
Tc (℃)
0
0
25
50
75
100
125
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JX011 Series
JieJie Microelectronics CO. , Ltd
FIG.3: Surge peak on-state current versus
number of cycles
12
FIG.4: On-state characteristics (maximum
values)
ITM(A)
ITSM (A)
10
tp=10ms
One cycle
9
1
6
Tj=Tjmax
3
Number of cycles
0
1
10
100
0.1
0
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms
(dI/dt ≤ 50A/μs)
Tj=25℃
VTM(V)
2.0
1.0
3.0
4.0
5.0
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
ITSM (A)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
100
2.5
ITSM
10
dI/dt
2.0
IGT
1.5
IH&IL
1.0
0.5
1
0.01
tp(ms)
0.1
1
10
0.0
-40
Tj (℃)
0
40
80
120
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
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parties which may result from the use of such products and information.
This document is the fourth version which is made in 20-Dec.-2014. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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