Datasheet

JIEJIE MICROELECTRONICS CO. , Ltd
JX014 Series Sensitive gate SCRs
Rev.3.0
DESCRIPTION:
The JX014 SCR series provide high dv/dt rate
with strong resistance to electromagnetic
interface. They are especially recommended for
use on residual current circuit breaker, straight
hair, igniter etc.
1
23
32
1
SOT-223
TO-92CR
K(1)
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
1.25
A
IGT
≤200
μA
VDRM /VRRM
900
V
G(3)
A(2)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-110
℃
Repetitive peak off-state voltage
VDRM
900
V
Repetitive peak reverse voltage
VRRM
900
V
IT(RMS)
1.25
A
ITSM
20
A
I2t
2
A2s
Critical rate of rise of on-state current
dI/dt
50
A/μs
Peak gate current (tp=20μs, Tj=110℃)
IGM
0.2
A
Peak gate power (tp=20μs, Tj=110℃)
PGM
0.5
W
PG(AV)
0.1
W
Storage junction temperature range
Operating junction temperature range
RMS on-state current
TO-92CR (TC=50℃)
SOT-223 (TC=75℃)
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Average gate power dissipation(Tj=110℃)
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JX014 Series
JieJie Microelectronics CO. , Ltd
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
IGT
VGT
VGD
Test Condition
Unit
MIN.
TYP.
MAX.
-
50
200
μA
-
0.6
0.8
V
0.2
-
-
V
VD=12V RL=33Ω
VD=VDRM Tj=110℃
IL
IG=1.2 IGT
-
-
5
mA
IH
IT=0.05A
-
-
4
mA
50
-
-
V/μs
dV/dt
VD=2/3VDRM Tj=110℃ RGK=1KΩ
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM=4A tp=380μs
VD=VDRM VR=VRRM
Value(MAX)
Unit
Tj=25℃
1.5
V
Tj=25℃
5
μA
Tj=110℃
100
μA
Value
Unit
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
TO-92CR
57
SOT-223
30
junction to case
℃/W
ORDERING INFORMATION
J
X
014
CR
V:SOT-223
CR:TO-92CR
JieJie Microelectronics Co.,Ltd
Sensitive gate SCRs
TEL：+86-513-83639777
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IT(RMS):1.25A
http://www.jjwdz.com
JX014 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
N
C
N
Millimeters
Typ.
V
F
A
A
x
H
B
Φ
Ma
mm
2.0
K
P
E
J
D
G
TO-92CR
Inches
Min.
4.56
5.00
0.179
0.197
B
4.56
5.00
0.179
0.197
3.30
3.60
0.130
0.142
D
0.50
0.60
0.020
0.024
E
0.60
0.80
0.024
0.032
F
-
1.1
-
G
-
1.27
-
H
-
2.43
J
0.36
K
11.50
N
2.04
P
V
0.043
-
0.050
0.096
-
-
-
0.50
0.014
14.20
0.453
2.66
0.080
0.105
2.50
2.90
0.098
0.114
-
4.3
-
0.169
13.00
0.020
0.512
0.559
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
1.5
P(w)
1.5
TO-92CR
1.0
1.0
0.5
0.5
0
Max.
C
FIG.1 Maximum power dissipation versus RMS
on-state current
0
Typ.
Max.
Min.
0.25
IT(RMS) (A)
0.5
0.75
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1.0
1.25
- 3 / 4-
SOT-223
α=180°
Tc (℃)
0
0
25
50
75
100
125
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JX014 Series
JieJie Microelectronics CO. , Ltd
FIG.3: Surge peak on-state current versus
number of cycles
20
FIG.4: On-state characteristics (maximum
values)
ITM(A)
ITSM (A)
20
tp=10ms
One cycle
10
15
10
1
5
Tj=Tjmax
Number of cycles
0
1
10
100
0.1
0
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I t (dI/dt < 50A/μs)
1.0
2.0
VTM(V)
3.0
4.0
5.0
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
2
2
Tj=25℃
2
ITSM (A), I t (A s)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
300
ITSM
100
2.5
IH&IL
2.0
IGT
1.5
10
dI/dt
1.0
0.5
1
0.01
I2 t
tp(ms)
0.1
1
10
0.0
-40
Tj (℃)
0
40
80
120
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
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parties which may result from the use of such products and information.
This document is the third version which is made in 20-Dec.-2014. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
TEL：+86-513-83639777
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