IRF9540NS/L
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Advanced Process Technology
Surface Mount (IRF9540S)
Low-profile through-hole (IRF9540L)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
TO-263
TO-262
Description
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9540L) is available for lowprofile applications.
D
VDSS = -100V
RDS(on) = 0.117Ω
G
ID = -23A
S
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
-23
-16
-76
3.8
140
0.91
± 20
430
-11
14
-5.0
-55 to + 175
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
2014-8-38
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
1
Typ.
Max.
Units
–––
–––
1.1
40
°C/W
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IRF9540NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-100
–––
–––
-2.0
5.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
67
51
51
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1300
400
240
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.117
Ω
VGS = -10V, ID = -11A
-4.0
V
VDS = VGS, ID = -250µA
–––
S
VDS = -50V, ID = -11A
-25
VDS = -100V, VGS = 0V
µA
-250
VDS = -80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
97
ID = -11A
15
nC VDS = -80V
51
VGS = -10V, See Fig. 6 and 13
–––
VDD = -50V
–––
ID = -11A
ns
–––
RG = 5.1Ω
–––
RD = 4.2Ω, See Fig. 10
Between lead,
nH
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
IS
I SM
V SD
t rr
Q rr
ton
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -23
showing the
A
G
integral reverse
––– ––– -76
p-n junction diode.
S
––– ––– -1.6
V
TJ = 25°C, IS = -11A, VGS = 0V
––– 150 220
ns
TJ = 25°C, IF = -11A
––– 830 1200 nC
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 7.1mH
Uses IRF9540N data and test conditions
RG = 25Ω, I AS = -11A. (See Figure 12)
ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
2014-8-38
2
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IRF9540NS/L
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5 V
20 µ s P U L S E W ID TH
T c = 25 °C
A
1
0.1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-ID , Drain-to-Source Current (A )
-ID , D rain-to-S ource C urrent (A )
TOP
1
10
10
-4 .5V
2 0µ s P U LS E W ID TH
T C = 1 75 °C
1
100
0.1
1
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
2.5
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
-I D , D rain-to -So urc e C urre nt (A )
100
TJ = 25 °C
TJ = 1 7 5°C
10
1
V DS = -2 5 V
2 0µ s P U L S E W ID TH
4
5
6
7
8
9
10
I D = -19 A
2.0
1.5
1.0
0.5
VG S = -1 0V
0.0
A
-60
-VG S , Ga te -to-Source Volta ge (V)
-40
-20
0
20
40
60
80
Fig 4. Normalized On-Resistance
Vs. Temperature
3
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 3. Typical Transfer Characteristics
2014-8-38
A
100
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
0.1
10
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IRF9540NS/L
20
V GS
C is s
C rs s
C o ss
C , Capacitanc e (pF )
2500
2000
=
=
=
=
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
-V G S , G ate-to-S ource V oltage (V )
3000
C iss
1500
C oss
1000
C rss
500
0
10
V D S = -80 V
V D S = -50 V
V D S = -20 V
16
12
8
4
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
0
A
1
I D = -1 1A
0
100
20
60
80
A
100
Q G , Total G ate C harge (nC )
-VD S , D rain-to-S ourc e V oltage (V )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
-I D , D rain C urrent (A )
-I S D , Reverse D rain Current (A )
40
10
T J = 17 5°C
T J = 2 5°C
1
V G S = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
A
10 0µs
10
1m s
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1.6
1
-VS D , S ourc e-to-D rain V oltage (V )
10m s
A
10
100
1000
-VD S , D rain-to-S ourc e V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-38
100
Fig 8. Maximum Safe Operating Area
4
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IRF9540NS/L
25
RD
VDS
I D , Drain Current (A)
20
VGS
D.U.T.
RG
+
15
V DD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
150
10%
175
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
P DM
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-38
5
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IRF9540NS/L
E A S , S ingle P ulse A valanche E nergy (m J)
1200
L
VDS
D .U .T
RG
A
IA S
-2 0 V
tp
VD D
D R IV E R
0 .0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
TO P
1000
B O TTO M
800
600
400
200
0
A
25
IAS
ID
-4 .7A
-8 .1A
-11 A
50
75
100
125
150
175
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
IG
Charge
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
2014-8-38
.2µF
Fig 13b. Gate Charge Test Circuit
6
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IRF9540NS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
2014-8-38
7
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IRF9540NS/L
D2Pak Package Outline
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
3
15 .4 9 (.6 10)
14 .7 3 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
3X
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
Part Marking Information
D2Pak
A
PART NUM BER
LO G O
F530S
9 24 6
9B
1M
A S S E M B LY
LO T C O D E
2014-8-38
8
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRF9540NS/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
2014-8-38
9
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IRF9540NS/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .60 (.06 3)
1 .50 (.05 9)
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
1 .6 5 (.0 6 5 )
0 .3 68 (.0 1 4 5 )
0 .3 42 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
1 .75 (.06 9 )
1 .25 (.04 9 )
10 .9 0 (.42 9)
10 .7 0 (.42 1)
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
16 .10 (.63 4 )
15 .90 (.62 6 )
F E E D D IRE C TIO N
13.50 (.532 )
12.80 (.504 )
2 7.4 0 (1.079)
2 3.9 0 (.9 41)
4
33 0.00
(1 4.1 73)
MA X.
60.00 (2.3 62)
MIN .
NO TES :
1. C O M F O R M S TO E IA -4 18.
2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER .
3. D IM E N S IO N ME A S U R E D @ H U B .
4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .
2014-8-38
26 .40 (1.03 9)
24 .40 (.961 )
3
10
3 0.40 (1.1 97)
MAX.
4
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