BT151S series BT151M series GENERAL DESCRIPTION SOT428 SYMBOL TO-252 Glass passivated thyristors in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. a k g QUINK REFERENCE DATA SYMBOL V DRM, V RRM IT(AV) IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT BT151S (or BT151M)Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current 500R 500 650R 650 800R 800 V 7.5 12 100 7.5 12 100 7.5 12 100 A A A LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj Average on-state current RMS on-state current Non-repetitive peak on-state current half sine wave; Tmb ≤ 103 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature MIN. MAX. UNIT - -500R -650R -800R 5001 6501 800 V - 7.5 12 A A - 100 110 50 50 A A A2s A/µs -40 - 2 5 5 5 0.5 150 125 A V V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 2014-6-14 1 www.kersemi.com BT151S series BT151M series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to mounting base Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient - - 1.8 K/W - 75 - K/W Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C 0.25 - 2 10 7 1.4 0.6 0.4 0.1 15 40 20 1.75 1.5 0.5 mA mA mA V V V mA MIN. TYP. MAX. UNIT 50 200 - 130 1000 2 - V/µs V/µs µs - 70 - µs DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; Gate open circuit RGK = 100 Ω ITM = 40 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω tgt tq 2014-6-14 Gate controlled turn-on time Circuit commutated turn-off time 2 www.kersemi.com BT151S series BT151M series Ptot / W 15 BT151 conduction angle degrees 30 60 90 120 180 10 97.25 Tmb(max) / C form factor 120 98 4 2.8 2.2 1.9 1.57 BT151 100 time T Tj initial = 25 C max 1.9 2.2 ITSM IT a = 1.57 a ITSM / A 107 80 2.8 4 60 116 5 40 20 0 0 1 2 3 4 5 IF(AV) / A 6 7 125 8 0 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 10 100 Number of half cycles at 50Hz 1000 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. BT151 ITSM / A 1 25 BT151 IT(RMS) / A 20 dI T /dt limit 15 100 10 I TSM IT 5 time T Tj initial = 25 C max 10 10us 100us 0 0.01 10ms 1ms 0.1 1 surge duration / s T/s Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 15 IT(RMS) / A 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 103˚C. BT151 1.6 103 C VGT(Tj) VGT(25 C) BT151 1.4 10 1.2 1 5 0.8 0.6 0 -50 0 50 Tmb / C 100 0.4 -50 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. 2014-6-14 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 www.kersemi.com BT151S series BT151M series 3 IGT(Tj) IGT(25 C) 30 BT151 Tj = 125 C Tj = 25 C 25 2.5 Vo = 1.06 V Rs = 0.0304 ohms typ 20 2 1.5 15 1 10 0.5 5 0 -50 0 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 BT151 IT / A IL(Tj) IL(25 C) 0 0.5 max 1 VT / V 1.5 2 Fig.10. Typical and maximum on-state characteristic. 10 BT145 2.5 BT151S Zth j-mb (K/W) 1 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 IH(Tj) IH(25 C) 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 10000 BT151 dVD/dt (V/us) 2.5 1000 2 RGK = 100 Ohms 1.5 100 1 gate open circuit 0.5 0 -50 0 50 Tj / C 100 10 150 50 100 150 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. 2014-6-14 0 Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 4 www.kersemi.com BT151S series BT151M series MECHANICAL DATA Dimensions in mm seating plane Net Mass: 1.1 g 1.1 6.73 max tab 2.38 max 0.93 max 5.4 4 min 6.22 max 10.4 max 4.6 2 1 0.5 0.5 min 3 0.3 0.5 0.8 max (x2) 2.285 (x2) Fig.13. SOT428 : centre pin connected to tab. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.14. SOT428 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". 2014-6-14 5 www.kersemi.com