IRF9Z34NS/L
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TO-263
TO-262
Advanced Process Technology
Surface Mount (IRF9Z34NS)
Low-profile through-hole (IRF9Z34NL)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Description
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34NL) is available for lowprofile applications.
D
VDSS = -55V
RDS(on) = 0.10Ω
G
ID = -19A
S
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, V GS @ -10V
Continuous Drain Current, V GS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
-19
-14
-68
3.8
68
0.45
± 20
180
-10
6.8
-5.0
-55 to + 175
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
2014-8-30
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
1
Typ.
Max.
Units
–––
–––
2.2
40
°C/W
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IRF9Z34NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-55
–––
–––
-2.0
4.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
55
30
41
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
620
280
140
V(BR)DSS
∆V(BR)DSS/∆TJ
I GSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.10
Ω
VGS = -10V, I D = -10A
-4.0
V
VDS = VGS , ID = -250µA
–––
S
V DS = -25V, I D = -10A
-25
VDS = -55V, VGS = 0V
µA
-250
VDS = -44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
35
I D = -10A
7.9
nC
VDS = -44V
16
VGS = -10V, See Fig. 6 and 13
–––
VDD = -28V
–––
I D = -10A
ns
–––
R G = 13Ω
–––
RD = 2.6Ω, See Fig. 10
Between lead,
nH
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -19
showing the
A
G
integral reverse
––– ––– -68
p-n junction diode.
S
––– ––– -1.6
V
TJ = 25°C, IS = -10A, VGS = 0V
––– 54
82
ns
TJ = 25°C, IF = -10A
––– 110 160
nC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.6mH
Uses IRF9Z34N data and test conditions
RG = 25Ω, I AS = -10A. (See Figure 12)
I SD ≤ -10A, di/dt ≤ -290A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
2014-8-30
2
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IRF9Z34NS/L
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
-ID , D ra in -to -S o u rc e C u rre n t (A )
-ID , D ra in -to -S o u rc e C u rre n t (A )
10
-4 .5V
2 0µ s PU LS E W ID TH
TTcJ =
= 25°C
2 5°C
A
1
0.1
1
10
10
-4 .5V
100
0.1
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
-I D , D rain -to- S our ce C urr ent ( A )
2.0
T J = 2 5 °C
T J = 1 7 5 °C
10
V DS = -2 5 V
2 0 µ s P U L S E W ID T H
6
7
8
9
10
A
A
100
I D = -17 A
1.5
1.0
0.5
VG S = -10 V
0.0
-60 -40 -20
0
20
40
60
80
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
A
100 120 140 160 180
T J , Junction T emperature (°C)
-VG S , Ga te-to-S o urce V oltage (V )
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10
Fig 2. Typical Output Characteristics
100
5
1
-VD S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
1
20 µ s PU LSE W ID TH
TTCJ = 175°C
1 75°C
1
-VD S , Drain-to-Source Voltage (V)
4
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
TOP
TOP
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IRF9Z34NS/L
V GS
C is s
C rs s
C os s
C , C a p a c ita n c e (p F )
1000
=
=
=
=
20
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
-V G S , G a te -to -S o u rc e V o lta g e (V )
1200
C i ss
800
C os s
600
400
C rs s
200
0
10
V DS = -44 V
V DS = -28 V
16
12
8
4
FO R TEST C IR C U IT
SEE F IGU R E 1 3
0
A
1
I D = -10 A
100
0
-VD S , Drain-to-Source V oltage (V)
20
30
A
40
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
-I D , D ra in C u rre n t (A )
-IS D , R e ve rse D ra in C u rre n t (A )
10
10
T J = 1 75 °C
T J = 25 °C
1
100
1 0µs
100µ s
10
1m s
T CC ==225°C
5°C
T
VG S = 0 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
A
1.6
1
-VS D , S ource-to-Drain V oltage (V )
10m s
A
10
100
-VD S , Drain-to-Source V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-30
T J = 1 75°C
Sin gle Pu lse
1
Fig 8. Maximum Safe Operating Area
4
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IRF9Z34NS/L
20
RD
VDS
VGS
15
I D , Drain Current (A)
D.U.T.
RG
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
T C , Case Temperature
150
175
( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-30
5
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IRF9Z34NS/L
500
D .U .T
RG
IA S
-2 0V
tp
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
L
VDS
VDD
A
D R IV E R
0.0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
TOP
BO TTOM
400
300
200
100
0
A
25
I AS
ID
-4 .2A
-7.2 A
-10 A
50
75
100
125
150
175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
2014-8-30
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
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IRF9Z34NS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
2014-8-30
7
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IRF9Z34NS/L
D2Pak Package Outline
10.54 ( .415)
10.29 ( .405)
1.40 (.055)
MAX.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
RE F .
-B -
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
3
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
5.08 ( .200)
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
RE F.
1.39 (.055)
1.14 (.045)
B A M
MINIMUM RECO MM ENDED F OO TP RINT
11.43 (.450)
LE AD ASS IG NM ENT S
1 - G AT E
2 - DRA IN
3 - S OU RC E
NO TE S:
1 DIM ENS IO NS AF T ER S OLDE R DIP .
2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982.
3 CO NT RO LLING DIME NSIO N : INCH.
4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS.
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
Part Marking Information
D2Pak
A
PART NU MBER
L OGO
F53 0S
9246
9B
1M
AS SEMBLY
LOT CODE
2014-8-30
8
DATE CODE
(YYW W )
YY = YEAR
W W = W EE K
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IRF9Z34NS/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
2014-8-30
9
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IRF9Z34NS/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 3)
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
11 .6 0 (. 45 7 )
11 .4 0 (. 44 9 )
1 .6 5 (.0 6 5 )
0 .3 68 (.0 14 5 )
0 .3 42 (.0 13 5 )
15 .4 2 (.60 9 )
15 .2 2 (.60 1 )
2 4 .30 (.9 5 7)
2 3 .90 (.9 4 1)
TR L
1. 75 (.0 69 )
1. 25 (.0 49 )
1 0. 90 (.4 29 )
1 0. 70 (.4 21 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6. 10 (.6 34 )
1 5. 90 (.6 26 )
FE E D D IR E C TIO N
1 3.5 0 (. 532 )
1 2.8 0 (. 504 )
2 7.4 0 (1 .079 )
2 3.9 0 (.9 41)
4
33 0.0 0
(14. 17 3)
M AX .
6 0.0 0 (2 .36 2)
M IN .
N O T ES :
1. C O M F O R M S T O EIA -418 .
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER .
3. D IM E N S IO N M EA S U R E D @ H U B .
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E.
2014-8-30
10
26 .40 (1. 03 9)
24 .40 (.9 61 )
3
3 0.4 0 (1 .19 7)
MA X .
4
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