AO3400A 30V N-Channel MOSFET SOT23 Product summary VDS ID Top View Bottom View 30V (at VGS =10V) 5.7A R DS(ON)(at V GS =10V) R DS(ON)(at V GS = 4.5V) < 26.5mΩ < 32mΩ R DS(ON)(at V GS = 2.5V) < 48mΩ General Descrlptlon D The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is suitable for use as a load switch or in PWM applications. G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 2014-5-26 Steady-State Steady-State A 30 W 0.9 TJ, TSTG Symbol t ≤ 10s V 1.4 PD TA=70°C ±12 4.7 IDM TA=25°C Units V 5.7 ID TA=70°C Maximum 30 RθJA RθJL 1 -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W www.kersemi.com KSM3400A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.65 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C 5 100 nA 1.45 V 18 26.5 28 38 VGS=4.5V, ID=5A 19 32 mΩ VGS=2.5V, ID=3A 24 48 mΩ 1 V 2 A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=5.7A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=4.5V, VDS=15V, ID=5.7A 1.5 mΩ S 630 pF 75 pF 50 SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 1.05 VGS=10V, ID=5.7A Coss Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ pF 3 4.5 Ω 6 7 nC 1.3 nC 1.8 nC 3 ns VGS=10V, VDS=15V, RL=2.6Ω, RGEN=3Ω 2.5 ns 25 ns 4 ns IF=5.7A, dI/dt=100A/µs 8.5 Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/µs 2.6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2014-5-26 2 www.kersemi.com KSM3400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 15 10V 35 3V VDS=5V 4.5V 12 30 2.5V 9 ID(A) ID (A) 25 20 6 15 25°C 125°C 10 3 VGS=2V 5 0 0 0 1 2 3 4 0 5 30 1 1.5 2 2.5 3 Normalized On-Resistance 1.8 25 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 20 15 VGS=10V VGS=4.5V ID=5A 1.6 1.4 17 1.2 5 VGS=10V ID=5.7A2 10 1 0.8 10 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 50 1.0E+01 ID=5.7A 1.0E+00 40 40 IS (A) RDS(ON) (mΩ Ω) 1.0E-01 125°C 30 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 2014-5-26 2 0.0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 3 www.kersemi.com KSM3400A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1000 VDS=15V ID=5.7A 4 800 Capacitance (pF) VGS (Volts) Ciss 3 2 600 400 Coss 1 200 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 Crss 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1ms 1.0 10ms 0.1 TJ(Max)=150°C TA=25°C Power (W) ID (Amps) 10.0 100 10 10s DC 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 2014-5-26 4 www.kersemi.com KSM3400A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig 2014-5-26 L Isd + VD C IF t rr dI/dt I RM V dd V dd - V ds 4 www.kersemi.com