KSM3N60C
600V N-Channel MOSFET
TO-220
Features
• 3A, 600V, RDS(on) = 3.4Ω @VGS = 10 V
• Low gate charge ( typical 10.5 nC)
• Low Crss ( typical 5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
{
z
G
{
z
z
{
S
Absolute Maximum Ratings
Symbol
Parameter
KSM3N60C
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
Unit
600
V
3
1.8
A
A
12
A
±30
V
150
mJ
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
3
A
EAR
Repetitive Avalanche Energy
(Note 1)
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
75
0.62
W
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°C
(TC = 25°C)
- Derate above 25°C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
1.67
°C/W
RθJC
Thermal Resistance, Junction-to-Case
--
RθCS
Thermal Resistance, Junction-to-Case
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
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KSM3N60C
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
KSM3N60C
KSM3N60C
TO-220
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
600
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
2.0
--
4.0
V
--
2.8
3.4
Ω
--
3.5
--
S
--
435
565
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 1.5A
gFS
Forward Transconductance
VDS = 40V, ID = 1.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
45
60
pF
--
5
8
pF
--
12
34
ns
--
30
70
ns
--
35
80
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300V, ID = 3A
RG = 25Ω
(Note 4, 5)
VDS = 480V, ID = 3A
VGS = 10V
(Note 4, 5)
--
35
80
ns
--
10.5
14
nC
--
2.1
--
nC
--
4.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
3
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
12
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 3A
--
--
1.4
V
trr
Reverse Recovery Time
--
260
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 3A
dIF/dt =100A/µs
--
1.6
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3A, VDD = 50V, L=30mH, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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KSM3N60C
Typical Performance Characteristics
Figure 1. On-Region Characteristics
1
10
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10
1
ID, Drain Current [A]
ID, Drain Current [A]
10
Figure 2. Transfer Characteristics
0
o
150 C
o
25 C
o
-55 C
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
10
-1
10
0
10
10
1
0
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
1
10
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
10
8
VGS = 10V
6
4
VGS = 20V
2
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
0
-1
0
1
2
3
4
5
6
10
7
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
800
Capacitances [pF]
700
600
Coss
500
Ciss
VGS, Gate-Source Voltage [V]
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
400
300
200
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
100
0
-1
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 10A
0
10
0
10
1
0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
V DS, Drain-Source Voltage [V]
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KSM3N60C
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
♦ Notes :
0.9
1. VGS = 0 V
2. ID = 250 µA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
♦ Notes :
0.5
1. VGS = 10 V
2. ID = 1.5 A
0.0
-100
200
-50
o
TJ, Junction Temperature [ C]
2
50
100
150
200
o
Figure 9. Maximum Safe Operating Area
10
0
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
is Limited by R DS(on)
3
100 us
1 ms
ID, Drain Current [A]
ID, Drain Current [A]
10 us
1
10
10 ms
DC
0
10
※ Notes :
-1
10
o
1. TC = 25 C
2
1
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10
1
2
10
0
25
3
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
150
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
Zθ JC(t), Thermal Response
10
0
D = 0 .5
0 .2
※ N o te s :
1 . Z θ J C(t) = 1 .4 ℃ /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C(t)
0 .1
10
-1
0 .0 5
0 .0 2
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
2014-5-30
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KSM3N60C
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
2014-5-30
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KSM3N60C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
2014-5-30
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