KSMD5P10 / KSMU5P10 100V P-Channel MOSFET TO-252 Features • • • • • • • TO-251 -3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant General Description D These P-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Absolute Maximum Ratings Symbol VDSS ID G S TC = 25°C unless otherwise noted KSMD5P10 / KSMU5P10 Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current -100 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) Units V -3.6 A -2.28 A -14.4 A ± 30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 55 IAR Avalanche Current (Note 1) -3.6 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 2.5 -6.0 2.5 mJ V/ns W 25 0.2 -55 to +150 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 5.0 Units °C/W RθJA RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) 2014-7-12 1 www.kersemi.com KSMD5P10 / KSMU5P10 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -100 -- -- V -- -0.1 -- V/°C VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.8 A -- 0.82 1.05 Ω gFS Forward Transconductance VDS = -40 V, ID = -1.8 A -- 2.3 -- S -- 190 250 pF -- 70 90 pF -- 18 25 pF ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -4.5 A, RG = 25 Ω (Note 4, 5) VDS = -80 V, ID = -4.5 A, VGS = -10 V (Note 4, 5) -- 9 30 -- 70 150 ns -- 12 35 ns -- 30 70 ns -- 6.3 8.2 nC -- 1.7 -- nC -- 3.0 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -3.6 A ISM -- -- -14.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -3.6 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -4.5 A, dIF / dt = 100 A/µs (Note 4) -- 85 -- ns -- 0.27 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6.4mH, IAS = -3.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -4.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2014-7-12 2 www.kersemi.com KSMD5P10 / KSMU5P10 Typical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V 1 10 -I D , Drain Current [A] 0 10 -I D, Drain Current [A] 1 10 Top : -1 10 ※ Note : 1. 250μ s Pulse Test 2. TC = 25℃ 25℃ ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test -55℃ -2 10 150℃ 0 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.5 1 VGS = - 10V 2.0 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 10 VGS = - 20V 1.5 1.0 0.5 ※ Note : TJ = 25℃ 3 6 ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 9 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 450 Capacitance [pF] 25℃ -1 0 500 400 Coss 350 Ciss 300 200 Crss 150 100 50 0 -1 10 0 10 VDS = -20V 10 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 250 10 VDS = -50V VDS = -80V 8 6 4 2 ※ Note : ID = -4.5 A 0 1 0 1 2 3 4 5 6 7 8 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 2014-7-12 150℃ -V GS , Gate-Source Voltage [V] 0.0 0 10 Figure 6. Gate Charge Characteristics 3 www.kersemi.com KSMD5P10 / KSMU5P10 Typical Characteristics 1.2 (Continued) 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -1.8 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 4 Operation in This Area is Limited by R DS(on) -I D, Drain Current [A] -I D, Drain Current [A] 3 100 µs 1 10 1 ms 10 ms DC 0 10 ※ Notes : 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 ※ N o te s : 1 . Z θ J C ( t ) = 5 . 0 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T JM - T C = P D M * Z θ JC(t) 0 .2 0 0 .1 0 .0 5 10 0 .0 2 0 .0 1 -1 10 PDM t1 s in g le p u ls e Z θ 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve 2014-7-12 4 www.kersemi.com KSMD5P10 / KSMU5P10 Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L tp ID RG VDD DUT -10V VDS (t) ID (t) IAS BVDSS tp 2014-7-12 VDD Time 5 www.kersemi.com KSMD5P10 / KSMU5P10 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt 2014-7-12 6 www.kersemi.com KSMD5P10 / KSMU5P10 Package Dimensions D - PAK 2014-7-12 7 www.kersemi.com KSMD5P10 / KSMU5P10 Package Dimensions I - PAK 2014-7-12 8 www.kersemi.com