IRF1010NS
IRF1010NL
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D 2 P ak
T O -26 2
IRF1010NL
IRF1010NS
Description
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for lowprofile applications.
D
VDSS = 55V
RDS(on) = 11mΩ
G
ID = 85A
S
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
85
Units
60
290
180
1.2
± 20
43
18
3.6
-55 to + 175
A
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
2014-8-30
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
1
Typ.
Max.
Units
–––
–––
0.85
40
°C/W
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IRF1010NS/IRF1010NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
–––
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Typ.
–––
0.058
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
76
39
48
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
11
mΩ VGS = 10V, ID = 43A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 43A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
120
ID = 43A
19
nC VDS = 44V
41
VGS = 10V, See Fig. 6 and 13
–––
VDD = 28V
–––
ID = 43A
ns
–––
RG = 3.6Ω
–––
VGS = 10V, See Fig. 10
D
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
S
3210 –––
VGS = 0V
690 –––
VDS = 25V
140 –––
pF
ƒ = 1.0MHz, See Fig. 5
1030
250 mJ IAS = 4.3A, L = 270µH
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 85
showing the
A
G
integral reverse
––– ––– 290
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 43A, VGS = 0V
––– 69 100
ns
TJ = 25°C, IF = 43A
––– 220 230
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 270µH
RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12)
ISD ≤ 43A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and
represents operation outside rated limits.
2014-8-30
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Uses IRF1010N data and test conditions.
2
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IRF1010NS/IRF1010NL
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
4.5V
10
20µs PULSE WIDTH
T = 25 C
°
J
1
0.1
1
10
10
20µs PULSE WIDTH
T = 175 C
100
°
J
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
TJ = 25 ° C
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
4.5V
TJ = 175 ° C
10
V DS = 25V
20µs PULSE WIDTH
1
4
6
8
10
12
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature( °C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2014-8-30
ID = 85A
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRF1010NS/IRF1010NL
20
6000
5000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
Ciss
4000
3000
Coss
2000
Crss
1000
0
ID = 43A
VDS = 44V
VDS = 27V
VDS = 11V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
0
100
20
40
60
80
100
120
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
16
TJ = 175 ° C
100
10
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.6
1.2
1.8
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
2.4
1
VSD ,Source-to-Drain Voltage (V)
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-30
100µsec
4
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IRF1010NS/IRF1010NL
100
LIMITED BY PACKAGE
VDS
VGS
I D , Drain Current (A)
80
RD
D.U.T.
RG
+
-VDD
60
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-30
5
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EAS , Single Pulse Avalanche Energy (mJ)
IRF1010NS/IRF1010NL
15V
L
VDS
D .U .T
RG
IA S
2V0GS
V
tp
D R IV E R
+
V
- DD
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
500
TOP
400
BOTTOM
ID
18A
30A
43A
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V
QG
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
2014-8-30
ID
Current Sampling Resistors
6
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IRF1010NS/IRF1010NL
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
2014-8-30
7
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IRF1010NS/IRF1010NL
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
1.40 (.055)
M A X.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
REF.
-B-
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
3
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
5.08 (.200 )
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
REF.
1 .39 (.055)
1 .14 (.045)
B A M
M IN IM U M R E C O M M E N D E D F O O TP R IN T
11.43 (.4 50)
LE A D A S S IG N M E N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
N O TE S :
1 D IM E N S IO N S A F T E R S O LD E R D IP .
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
Part Marking Information
D2Pak
A
PART NUMBER
LOGO
F530S
9246
9B
1M
ASSEMBLY
LOT CODE
2014-8-30
8
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
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IRF1010NS/IRF1010NL
Package Outline
TO-262 Outline
Part Marking Information
TO-262
2014-8-30
9
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IRF1010NS/IRF1010NL
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
1 .6 5 (.0 6 5 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
1 0 .9 0 (.4 2 9 )
1 0 .7 0 (.4 2 1 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IR E C T IO N
13 .50 (.53 2 )
12 .80 (.50 4 )
2 7 .40 (1 .07 9 )
2 3 .90 (.9 41 )
4
330.00
(14.173)
M A X.
6 0.0 0 (2 .3 6 2)
M IN .
N O TES :
1. C O M F O R M S T O E IA -41 8.
2. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
2014-8-30
26.40 (1.039)
24.40 (.961)
3
10
3 0 .4 0 (1 .1 9 7)
MAX.
4
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