1N5712

R
1N5712
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
DO-35
FEATURES
Metal-on-silicon junction
High breakdown voltage
Low turn-on voltage
1.083(27.5)
MIN
JF
Ultrafast switching speed
Primarily intended for high level UHF/VHF detectionand pulse applications
0.079(2.0)
MAX
DIA
with broad dynamic range
The diode is also available in the MiniMELF case with type designation LL5712.
0.150(3.8)
MAX
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
1.083(27.5)
MIN
0.020(0.52)
MAX
DIA
Case: DO-35 glass case
Polarity: color band denotes cathode end
Dimensions in inches and (millimeters)
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak Reverse Voltage
Value
VRRM
20
V
430
35
mW
mA
-55 to+150
C
230
C
Ptot
IF
TJ/TSTG
TL
Power Dissipation (infinite Heat Sink)
Forward Continuous Current
Junction and Storage temperature range
Maximum Lead Temperature for Soldering during 10S at 4mm from Case
Units
Symbols
ELECTRICAL CHARACTERISTICS
Symbols
Reverse breakover voltage
at IR=10mA
Min.
VR
Typ.
Max.
20
Unis
V
Leakage current at VR=15V
IR
100
nA
Forward voltage drop
at IF=1mA
Test pulse: tp ≤ 300ms d ＜ 2% IF=35mA
VF
VF
0.55
1.0
V
V
CJ
1.2
PF
RqJA
400
K/W
Junction Capacitance at VR=0V ,f=1MHz
Thermal resistance
JINAN JINGHENG ELECTRONICS CO., LTD.
2-7
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTICS CURVES 1N5712
Figure 1. forward current versus forward voltage
at different temperatures(typical values)
Figure 2. forward current versus forward voltage
(typical values)
IF(mA)
10
IF(mA)
2
30
Tamb= 25 C
25
10
20
15
1
Tamb=150 C
Tamb= 25 C
Tamb= -55 C
10
10
-1
5
10
-2
0
0.2
0.4
0.6
0.8
1
0
1.2
VF(V)
0.2
0.4
0.6
0.8
1
VF(V)
Figure 3.Reverse current versus ambient
temperature
IR(mA)
10
2
90% confidence
VR=15V
10
max.
typ.
1
10
-1
10
-2
10
-3
0
25
50
75
100
125
150
Tamb=( C)
JINAN JINGHENG ELECTRONICS CO., LTD.
2-8
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTICS CURVES 1N5712
Figure 4.Reverse current versus continuous
Reverse voltage(typical values)
IR(mA)
10
2
150 C
10
125 C
100 C
1
75 C
10
-1
10
-2
10
-3
50 C
25 C
0
25
50
75
100
125
150
VR(V)
Figure 5.Capacitance C versus revers applied
voltage VR (typical values)
CJ(pF)
1.5
1.25
Tamb= 25 C
1
0.75
0.5
0.25
0
JINAN JINGHENG ELECTRONICS CO., LTD.
5
15
10
2-9
20
VR(V)
HTTP://WWW.JINGHENGGROUP.COM