1N4148W

R
1N4148W
SMALL SIGNAL SWITCHING DIODE
S E M I C O N D U C T O R
SOD-123
FEATURES
Silicon epitaxial planar diode
Fast switching diode
500mW power dissipation
This diode is also available in other case styles including: the DO-35
case with the type designation 1N4148, the MiniMelf case with the
type designation LL4148, the MicroMelf case with the type designation
MCL4148, the SOD-323 case with the type designation 1N4148WS, the
SOD-523 case with the type designation 1N4148WT.
(0.55 +0.05 )
-0.05
0.022"+0.002"
-0.002"
(1.60+0.05 )
-0.05
0.063"+0.002"
-0.002"
JF
(2.65±0.05(
0.104"+0.002
(3.8±0.1)
0.150"±0.004"
MECHANICAL DATA
5°
0.005"(0.135)
MAX
(1.10±0.05)
0.043"±0.002"
Case: SOD-123 plastic case
Weight: Approx. 0.01 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbols
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25°C and f 50Hz
Non-Repetitive Peack Forward Surge Current @t=1.0s
Power dissipation at TA=25°C
Junction temperature
Storage temperature range
Value
Units
VR
VRM
75
100
Volts
Volts
IAV
150
mA
500
400
150
-65 to +150
mA
IFSM
Ptot
TJ
TSTG
mW
C
C
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Max.
Units
IR
IR
IR
1
25
5
50
Volts
nA
mA
mA
CJ
4
pF
Vfr
2.5
Volts
trr
4
ns
Symbol
Forward voltage
at IF=10mA
VF
Leakage current
at VR=20V
at VR=75V
at VR=20V , TJ=150°C
Junction capacitance at VR=VF=0V
Voltage rise when switching on tested with 50mA
pulse tP=0.1ms, Rise time<30ms, fP=5 to 100kHz
Reverse recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100W
Thermal resistance junction to ambient
Rectification efficiency at f=100MHz, VRF=2V
JINAN JINGHENG ELECTRONICS CO., LTD.
R
Min.
Typ.
312
JA
K/W
0.45
11-11
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES 1N4148W
FIG 2: DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
FIG 1-FORWARD CHARACTERISTICS
mA
W
10 3
10 4
TJ=25 C
f=1KHz
10 2
IF
10 3
TJ=100 C
TJ=25 C
rF
10
10 2
1
10
-1
10
-2
1
10
0
1
2V
10 -2
10 -1
1
10 2
10
VF
mA
IF
FIG 3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG. 4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
mW
1000
900
1.5
TJ=25 C
f=1MHz
800
700
Ptot
Cj(VR)
Cj(0V)
600
500
1.3
1.1
400
300
0.9
200
100
0.7
0
0
100
200 C
0
TA
JINAN JINGHENG ELECTRONICS CO., LTD.
2
4
6
8
10V
VR
11-12
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES 1N4148W
FIG.5 RECTIFICATION EFFICIENCY MEASUREMENT
CIRCUIT
FIG 6: LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
nA
10 4
5
2
10 3
D.U.T.
5
60W
2nF
VRF=2V
5KW
VO
IR
2
10 2
5
2
10
5
VR=20V
2
1
0
100
200°C
Tj
FIG 7: ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
I
V=tp/T T=1/fp
IFRM
tp
10
IFRM
V=0
T
0.1
0.2
1
0.5
0.1
10 -5
10 -4
10 -3
10 -2
10 -1
1
10S
tp
JINAN JINGHENG ELECTRONICS CO., LTD.
11-13
HTTP://WWW.JINGHENGGROUP.COM