R 1N4448 SMALL SIGNAL SWITCHING DIODE S E M I C O N D U C T O R DO-35 (GLASS) FEATURES Silicon epitaxial planar diode 1.083(27.5) MIN JF Fast switching diode 500mW power dissipation 0.079(2.0) MAX DIA This diode is also available in the MiniMelf case with the type designation LL4448 0.150(3.8) MAX MECHANICAL DATA 1.083(27.5) MIN Case: DO-35 glass cass Weight: Approx. 0.13gram 0.020(0.52) MAX DIA Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Value Units DC Blocking Voltage Non-Repetitive Peak Reverse Voltage VR VRM 75 100 Volts Volts Average rectified current, Half wave rectification with Resistive load at TA=25 C and f 50Hz IAV 150 1) mA IFSM 500 Non-Repetitive Peack Forward Surge Current Power dissipation at TA=25 C @t=1.0s mA Ptot TJ mW 500 1) Junction temperature 200 Storage temperature range -65 to +200 TSTG 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) C C ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min. Forward voltage at IF=5mA at IF=100mA VF VF 0.62 Leakage current at VR=20V at VR=75V at VR=20V , TJ=150 C IR IR IR Junction capacitance at VR=VF=0V Reverse breakdown voltage tested with 100mA pulse Reverse recovery time from IF=10mA to IR=1mA, VR=6V, RL=100W Thermal resistance junction to ambient Rectification efficiency at f=100MHz, VRF=2V Typ. CJ V(BR)R 0.72 1 25 5 50 V V nA mA mA 4 pF 100 V trr R Units Max 4 350 JA ns 1) K/W 0.45 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) JINAN JINGHENG ELECTRONICS CO., LTD. 11-19 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES 1N4448 FIG 2: DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG 1-FORWARD CHARACTERISTICS mA W 10 3 10 4 TJ=25 C f=1KHz 10 2 10 3 TJ=100°C IF TJ=25°C rF 10 10 2 1 10 -1 10 -2 1 10 0 1 2V 10 -2 10 -1 1 VF 10 2 10 mA IF FIG 3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE mW 1000 900 1.1 TJ=25 C f=1MHz 800 700 Ptot Cj(VR) Cj(0V) 600 500 1.0 0.9 400 300 0.8 200 100 0.7 0 0 100 200 C 0 TA JINAN JINGHENG ELECTRONICS CO., LTD. 2 4 6 8 10V VR 11-20 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES 1N4448 FIG.5 RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG 6: LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 10 4 5 2 10 3 D.U.T. 5 60W 2nF VRF=2V 5KW VO IR 2 10 2 5 2 10 5 VR=20V 2 1 0 100 200°C Tj FIG 7: ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 I V=tp/T T=1/fp IFRM tp 10 IFRM V=0 T 0.1 0.2 1 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10S tp JINAN JINGHENG ELECTRONICS CO., LTD. 11-21 HTTP://WWW.JINGHENGGROUP.COM